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Работы, на которые ссылается эта работа

Работ: 43

Работа: Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

  1. Optical high harmonic generation in Dirac materials

    S. Rakhmanov, Kuvonchbek Matchonov, H. Yusupov +2

    СтатьяLaser-Matter Interactions and ApplicationsThe European Physical Journal B2025Цитирований: 26
    ABI

  2. Time of transition processes in a CdS-CIGS structural solar cells in the short-wave part of the absorption spectrum at different loading resistances

    R.R. Kabulov, Farrux Akbarov, Anvar Alimov

    СтатьяChalcogenide Semiconductor Thin FilmsNanosystems Physics Chemistry Mathematics2023Цитирований: 20
    ABI

  3. Second-harmonic generation in branched optical waveguides: Metric graphs based approach

    M. Akramov, B. Eshchanov, Sulton Usanov +2

    СтатьяAdvanced Fiber Laser TechnologiesPhysics Letters A2024Цитирований: 19
    ABI

  4. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
    ABI

  5. Statistics of the Recombinations of Holes and Electrons

    W. Shockley, W. T. Read

    Статья1952Цитирований: 19
    ABI

  6. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  7. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
    ABI

  8. CdTe-based thin film photovoltaics: Recent advances, current challenges and future prospects

    Michael A. Scarpulla, Brian E. McCandless, Adam B. Phillips +22

    Статья2023Цитирований: 9
    ABI

  9. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  10. Fabrication and Properties of nSi–pCdTe Heterojunctions

    I.B. Sapaev, Ш. А. Мирсагатов, Б. Сапаев +1

    СтатьяChalcogenide Semiconductor Thin FilmsInorganic Materials2020Цитирований: 8
    ABI

  11. Some Properties of Semiconductor-Ferroelectric Structures

    Zakirjan Toxirovich Аzamatov, Sharifa B. Utamuradova, Murodjon A. Yuldoshev +1

    СтатьяZnO doping and propertiesEast European Journal of Physics2023Цитирований: 7
    ABI

  12. Transparent PT-symmetric nonlinear networks

    M. Akramov, Jambul Yusupov, Matthias Ehrhardt +2

    СтатьяQuantum Mechanics and Non-Hermitian PhysicsPhysica Scripta2025Цитирований: 6
    ABI

  13. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  14. Electrophysical and Photoelectric Properties of Injection Photodiode Based on pSi–nCdS–In Structure and Influence of Ultrasonic Irradiation on them

    Ш. А. Мирсагатов, I. B. Sapaev, Sh. R. Valieva +1

    Статья2015Цитирований: 4
    ABI

  15. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  16. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2019Цитирований: 4
    ABI

  17. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3
    ABI

  18. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    I. M. Dharmadasa, Paul A. Bingham, O. K. Echendu +11

    Статья2014Цитирований: 3
    ABI

  19. Study of Optical, Electrophotographic and Holographic Parameters of As-Se Condensates from the Prehistory of the Original Bulk Materials

    Sharifa B. Utamuradova, Z. T. Azamatov, A I Popov +3

    СтатьяPhase-change materials and chalcogenidesEast European Journal of Physics2024Цитирований: 2
    ABI

  20. Polycrystalline CdSeTe/CdTe Absorber Cells With 28 mA/cm<sup>2</sup> Short-Circuit Current

    Amit Munshi, Jason M. Kephart, Ali Abbas +6

    Статья2017Цитирований: 2
    ABI

  21. Investigation of temporal characteristics of photosensitive heterostructures based on gallium arsenide and silicon

    F. A. Giyasova, Murodjon A. Yuldoshev

    Статья2025Цитирований: 2
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI

  23. Без названия

    ДругоеЦитирований: 1
    ABI

  24. Без названия

    ДругоеЦитирований: 1
    ABI

  25. Без названия

    ДругоеЦитирований: 1
    ABI