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Работы, цитирующие эту работу

Работ: 10

Работа: Mechanism of charge transfer in n-CdS/p-CdTe heterojunctions

  1. Injection photodiode based on an n-CdS/p-CdTe heterostructure

    Ш. А. Мирсагатов, R. R. Kabulov, M. A. Makhmudov

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2013Цитирований: 19
    ABI

  2. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2023Цитирований: 12
    ABI

  3. Effect of surface microroughness on the composition and electronic properties of CdTe/Mo(111) films

    Y. S. Ergashov, Д. А. Ташмухамедова, Flyura Djurabekova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsBulletin of the Russian Academy of Sciences Physics2016Цитирований: 10
    ABI

  4. The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

    R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2016Цитирований: 7
    ABI

  5. Effect of implantation of active metal ions on the elemental and chemical compositions of the CdTe surface

    Z. E. Mukhtarov, З. А. Исаханов, Б. Е. Умирзаков +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics2015Цитирований: 6
    ABI

  6. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6
    ABI

  7. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  8. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  9. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
    ABI

  10. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2022Цитирований: 0
    ABI