Работы, цитирующие эту работу

Работ: 15

Работа: Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

1. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

   M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17

   ABIABI:AkademIndex/openalex/2021.article.000283

2. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

   А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

   СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12

   ABIABI:AkademIndex/openalex/2017.article.000091

3. Obtaining higher manganese silicide films with high thermoelectric properties

   I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

   СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.253378

4. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

   Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

   СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.104968

5. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

   Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

   СтатьяSemiconductor materials and interfacesPhysics and Chemistry of Solid State2024Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.267083

6. Changes in the electronic structure of the Si surface as a result of ion implantation

   S. B. Donaev, Umida Ziyamukhamedova, M. Kenjaeva +3

   СтатьяIon-surface interactions and analysisE3S Web of Conferences2023Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.144489

7. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

   S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

   СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.232444

8. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

   Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

   СтатьяSemiconductor materials and interfacesTechnical Physics2019Цитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.391457

9. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

   M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

   СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.213643

10. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1

    ABIABI:AkademIndex/openalex/2020.article.001910

11. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

    Gunel Imanova, I. R. Bekpulatov

    СтатьяSemiconductor materials and interfacesAmerican Journal of Nano Research and Applications2021Цитирований: 1

    ABIABI:AkademIndex/openalex/2021.article.002486

12. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1

    ABIABI:AkademIndex/openalex/2026.other.571863

13. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0

    ABIABI:AkademIndex/openalex/2022.article.002267

14. Study of the profiles of the distribution of atoms of the contacting material over the depth of pure and ion-doped silicon

    S. B. Donaev, Ganjimurod Shirinov, Surayyo Ergasheva +3

    СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2023Цитирований: 0

    ABIABI:AkademIndex/openalex/2023.article.006628

15. Thermal sensor based on si single crystal implanted with different parties P⁺ and B⁺ ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0

    ABIABI:AkademIndex/openalex/2023.article.009630