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Работы, цитирующие эту работу

Работ: 15

Работа: Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

  1. Structure and Properties of a Bilayer Nanodimensional CoSi2/Si/CoSi2/Si System Obtained by Ion Implantation

    Y. S. Ergashov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisTechnical Physics2018Цитирований: 14
    ABI

  2. Energy Threshold of the Atomic and Cluster Sputtering of Some Elements under Bombardment with Cs, Rb, and Na Ions

    R. Djabbarganov, Б.Г. Атабаев, З. А. Исаханов +1

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2019Цитирований: 14
    ABI

  3. Electronic structure of Ga1–x Al x As nanostructures grown on the GaAs surface by ion implantation

    S. B. Donaev, Б. Е. Умирзаков, Д. А. Ташмухамедова

    СтатьяIon-surface interactions and analysisTechnical Physics2015Цитирований: 13
    ABI

  4. Escape Depth of Secondary and Photoelectrons from CdTe Films with a Ba Film

    Б. Е. Умирзаков, Д. А. Ташмухамедова, M. A. Tursunov +2

    СтатьяElectron and X-Ray Spectroscopy TechniquesTechnical Physics2019Цитирований: 12
    ABI

  5. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 8
    ABI

  6. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2020Цитирований: 8
    ABI

  7. Composition and Structure of Ga1 – xNa x As Nanolayers Produced near the GaAs Surface by Na+ Implantation

    Kh. Kh. Boltaev, J. Sh. Sodikjanov, Д. А. Ташмухамедова +1

    СтатьяSemiconductor materials and devicesTechnical Physics2017Цитирований: 7
    ABI

  8. Formation of photoelectron spectra of alloys niobium-molybdenum-zirconium

    Y. S. Ergashov, Burkhon Donaev, Sherzod Khudainazarov +1

    СтатьяElectron and X-Ray Spectroscopy TechniquesE3S Web of Conferences2021Цитирований: 6
    ABI

  9. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2019Цитирований: 5
    ABI

  10. Emissivity of Laser-Activated Pd–Ba Alloy

    S. B. Donaev, Б. Е. Умирзаков, N. M. Mustafaeva

    СтатьяLaser Material Processing TechniquesTechnical Physics2019Цитирований: 5
    ABI

  11. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2019Цитирований: 4
    ABI

  12. Electronic and Optical Properties of NiSi2/Si Nanofilms

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +1

    СтатьяSurface and Thin Film PhenomenaTechnical Physics2019Цитирований: 3
    ABI

  13. Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

    Б. Е. Умирзаков, М. К. Рузибаева, З. А. Исаханов +1

    СтатьяIon-surface interactions and analysisTechnical Physics2019Цитирований: 2
    ABI

  14. Fabrication of Cd–Ba–S Nanoscale Structures on the Surface and in the Near-Surface Region of CdS Films by Implantation with Ba+ Ions

    J. Sh. Sodikjanov, Б. Е. Умирзаков

    СтатьяQuantum Dots Synthesis And PropertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 1
    ABI

  15. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

    I. R. Bekpulatov, Ilkhom Turapov, S. T. Abraeva +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2021Цитирований: 1
    ABI