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Работы, цитирующие эту работу

Работ: 19

Работа: Statistics of the Recombinations of Holes and Electrons

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1987Цитирований: 8
    ABI

  3. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    СтатьяSemiconductor materials and devicesMicro and Nanostructures2023Цитирований: 5
    ABI

  5. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  6. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (b)1968Цитирований: 5
    ABI

  7. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1981Цитирований: 5
    ABI

  8. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4
    ABI

  9. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2008Цитирований: 4
    ABI

  10. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI

  11. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI

  12. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

    Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2025Цитирований: 1
    ABI

  13. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1
    ABI

  14. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 1
    ABI

  15. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1975Цитирований: 0
    ABI

  16. Influence of X-irradiation on silicon Schottky diodes

    U.A. Shakirov, Marat S. Yunusov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1976Цитирований: 0
    ABI

  17. Injection of degenerate electron-hole plasma

    Yu. A. Katulevskii

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 0
    ABI

  18. Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation

    S. A. Azimov, P. M. Karageoegy-Alkalaev, A. Yu. Leĭderman +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 0
    ABI

  19. Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

    Smagul Karazhanov

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2000Цитирований: 0
    ABI