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Работы, цитирующие эту работу

Работ: 11

Работа: The physics of semiconductor devices

  1. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  2. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2
    ABI

  3. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    СтатьяSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering2018Цитирований: 2
    ABI

  4. Effect of Solar Radiation of Different Power on the Internal Amplification of the Primary Photocurrent in Heterostructures Based on Cadmium Telluride

    R. R. Kabulov, S. Yu. Gerasimenko, F. A. Akbarov

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Solar Energy2023Цитирований: 2
    ABI

  5. Photodetectors based on osmium-doped silicon

    Marat S. Yunusov, Р. А. Муминов, G. Nurkuziev +2

    СтатьяPhotonic and Optical DevicesSemiconductors1999Цитирований: 0
    ABI

  6. Radiation-stimulated processes in CdTe solar cells

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2003Цитирований: 0
    ABI

  7. Dynamics of the defects recharging in coarse-grained p-CdTe films

    Kh. Kh. Ismailov, Zh. Zhanabergenov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2006Цитирований: 0
    ABI

  8. Photosensitive n-Ox/p-CuIn3Se5 heterostructures

    I. V. Bodnar, A. A. Vaĭpolin, V. Yu. Rud’ +3

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Applied Spectroscopy2006Цитирований: 0
    ABI

  9. Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties

    I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2

    СтатьяSemiconductor materials and interfacesSemiconductors2010Цитирований: 0
    ABI

  10. New Heterostructures on the Basis of Cd1-xMnxTe Solid Solutions: Photoelectric Properties

    V. Yu. Rud’, Yury Rud, Г. А. Ільчук +2

    СтатьяAdvanced Semiconductor Detectors and MaterialsLinnaeus Eco-Tech2017Цитирований: 0
    ABI

  11. White glow and reemission effect in heterostructures nSi-p15R-SiC-pC<sub>diamond</sub> and their contribution to the efficiency of a solar cell based on them

    А. Кутлимратов, Utkurjon Rakhmonov

    СтатьяDiamond and Carbon-based Materials Research2022Цитирований: 0
    ABI