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Работы, на которые ссылается эта работа

Работ: 19

Работа: Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

  1. Без названия

    ДругоеЦитирований: 1117
    ABI

  2. Effect of Ar+-ion bombardment on the composition and structure of the surface of CoSi2/Si(111) nanofilms

    S. B. Donaev, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2015Цитирований: 23
    ABI

  3. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  4. On the creation of ordered nuclei by ion bombardment for obtaining nanoscale si structures on the surface of CaF2 films

    Б. Е. Умирзаков, S. B. Donaev

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 21
    ABI

  5. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    СтатьяIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics2014Цитирований: 20
    ABI

  6. Formation of nanosize silicides films on the Si(111) and Si(100) surfaces by low-energy ion implantation

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, A.M. Rakhimov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 15
    ABI

  7. Analysis of the structure and properties of heterostructured nanofilms prepared by epitaxy and ion implantation methods

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +3

    СтатьяMetal and Thin Film MechanicsTechnical Physics2013Цитирований: 15
    ABI

  8. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  9. Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

    Б. Е. Умирзаков, Д. А. Ташмухамедова, М. К. Рузибаева +2

    СтатьяSilicon Nanostructures and PhotoluminescenceNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms2014Цитирований: 13
    ABI

  10. Без названия

    ДругоеЦитирований: 13
    ABI

  11. Method for additional purification of the surface of Si(111) single crystal

    A. S. Risbaev, J. B. Khujaniyazov, I. R. Bekpulatov +1

    СтатьяMaterial Properties and Failure MechanismsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  12. Peculiarities of the electron structure of nanosized ion-implanted layers in silicon

    А.С. Рысбаев, Zh. B. Khuzhaniyazov, M.T. Normuradov +2

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 9
    ABI

  13. The Morphology and Electronic Properties of Si Nanoscale Structures on a CaF2 Surface

    Б. Е. Умирзаков, Р. Х. Ашуров, S. B. Donaev

    СтатьяSemiconductor materials and interfacesTechnical Physics2019Цитирований: 4
    ABI

  14. On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

    А.С. Рысбаев, A. K. Tashatov, Sh. X. Dzhuraev +3

    СтатьяSurface and Thin Film PhenomenaJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2011Цитирований: 3
    ABI

  15. Theoretical Explanation of the Effect of a Decrease in the Si(111) Plasmon Energy during the Implantation of Ions with a Large Dose

    А.С. Рысбаев, J. B. Khujaniyozov, M.T. Normuradov +3

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 3
    ABI

  16. Structure of МеSi Silicide Films (Me: Li, Rb, K and Cs) According to Electron Microscopy Data and the Diffraction of Slow Electrons

    M.T. Normuradov, A. S. Risbaev, J. B. Khujaniyozov +1

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 2
    ABI

  17. Optical and structural properties of β-FeSi2 precipitate layers in silicon

    Bernd Schuller, R. Carius, S. Mantl

    Статья2003Цитирований: 2
    ABI

  18. High-Sensitivity Temperature Sensor on the Basis of Single-Crystal Si(111) Implanted from Multiple Directions with P+ and B+ Ions

    А.С. Рысбаев, M. T. Normurodov, A.M. Rakhimov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2020Цитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI