Работы, цитирующие эту работу

Работ: 6

Работа: Physics of semiconductor devices

1. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

   С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

   СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.345490

2. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

   A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

   СтатьяSemiconductor materials and devicesDoklady Physics2010Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.612723

3. Photophysical characteristics of microlayer photodiode pAlGaInAs(Zn)-nGaAs-Au structures

   D. M. Edgorova, F. M. Ashrapov

   СтатьяSemiconductor Quantum Structures and DevicesJournal of Engineering Physics and Thermophysics2007Цитирований: 1

   ABIABI:AkademIndex/openalex/2007.article.000273

4. ESCA compositional profiles and electrical properties of diamond‐like carbon film/Si MIS structure

   Yusuke Mizokawa, Osamu Komoda, Tatsuro Miyasato +3

   СтатьяDiamond and Carbon-based Materials ResearchElectronics and Communications in Japan (Part II Electronics)1987Цитирований: 0

   ABIABI:AkademIndex/openalex/1987.article.000104

5. Growth of InAs photodiode structures from metalorganic compounds

   S. S. Kizhaev, M. P. Mikhaĭlova, C. C. Molchanov +2

   СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters1998Цитирований: 0

   ABIABI:AkademIndex/openalex/1998.article.000119

6. Influence of the radius of the quantum dot and the nonquilibrium degree on the conversion efficiency of light emitting diodes

   Х. Б. Ашуров, M. M. Adilov, С. Е. Максимов +1

   СтатьяSemiconductor Quantum Structures and DevicesNanosystems Physics Chemistry Mathematics2015Цитирований: 0

   ABIABI:AkademIndex/openalex/2015.article.000830