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A. Yu. Leĭderman

45 та иш

Starodubtsev Physical-Technical Institute, Uzbekistan Academy of Sciences, ul. G. Mavlyanova 2, Tashkent, 700084, Uzbekistan

  1. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 иқтибос
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19878 иқтибос
    ABI

  3. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    МақолаNear-Field Optical MicroscopyPhysics of the Solid State20147 иқтибос
    ABI

  4. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State20086 иқтибос
    ABI

  5. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    МақолаChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20136 иқтибос
    ABI

  6. Double-injection currents in Zn-compensated silicon pin structures

    P. M. Karageorgy‐Alkalaev, I. Z. Karimova, P. I. Knigin +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19766 иқтибос
    ABI

  7. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 иқтибос
    ABI

  8. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    МақолаSemiconductor Quantum Structures and DevicesSemiconductors20165 иқтибос
    ABI

  9. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (b)19685 иқтибос
    ABI

  10. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  11. Study of properties of tellurium-doped indium phosphide as photoconversion material

    A. Yu. Leĭderman, А. С. Саидов, M. M. Khashaev +1

    МақолаPhase-change materials and chalcogenidesApplied Solar Energy20144 иқтибос
    ABI

  12. The thermoelectric effect in a graded-gap nSi–pSi1–x Ge x heterostructure

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20164 иқтибос
    ABI

  13. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  14. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  15. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  16. On the magnetosensitivity of semiconductor diode structures with strong carrier accumulation

    M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSemiconductor Quantum Structures and Devicesphysica status solidi (a)19813 иқтибос
    ABI

  17. Thermovoltaic processes in gallium arsenide doped with tin

    A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

    МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 иқтибос
    ABI

  18. Thermoelectric effect in the graded band gap Si1–x Ge x (0.2 ≤ x ≤ 1), Si1–x Ge x (0.5 ≤ x ≤ 1) solid solutions dependent on the gap difference

    A. Yu. Leĭderman, А. С. Саидов, A. B. Karshiev

    МақолаMaterial Science and ThermodynamicsApplied Solar Energy20172 иқтибос
    ABI

  19. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20072 иқтибос
    ABI

  20. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    МақолаSemiconductor materials and interfacesApplied Solar Energy20091 иқтибос
    ABI

  21. The effect of impurity spectrum tailing on photocell characteristics

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20101 иқтибос
    ABI

  22. The nature of thermovoltaic currents and voltages observed for the polycrystalline silicon synthesized by means of five-time melting of engineering silicon in a solar furnace

    А. С. Саидов, A. Yu. Leĭderman, Sh. T. Manshurov

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20111 иқтибос
    ABI

  23. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    МақолаSemiconductor materials and interfacesTechnical Physics Letters20201 иқтибос
    ABI

  24. Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

    A. Yu. Leĭderman, M. M. Khashaev

    МақолаOptical and Acousto-Optic TechnologiesApplied Solar Energy20131 иқтибос
    ABI

  25. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

    Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20031 иқтибос
    ABI