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Ушбу ишга иқтибос қилган ишлар

19 та иш

Иш: Statistics of the Recombinations of Holes and Electrons

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    МақолаAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State201216 иқтибос
    ABI

  2. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19878 иқтибос
    ABI

  3. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19847 иқтибос
    ABI

  4. Optimization of vertically stacked nanosheet FET immune to self-heating

    M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1

    МақолаSemiconductor materials and devicesMicro and Nanostructures20235 иқтибос
    ABI

  5. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    МақолаSilicon and Solar Cell TechnologiesPhysics of the Solid State20095 иқтибос
    ABI

  6. Statistics of Inter‐Impurity Recombination of Electrons and Holes in Semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (b)19685 иқтибос
    ABI

  7. On the theory of carrier exclusion in “pure” intrinsic semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19815 иқтибос
    ABI

  8. Recombination in semiconductors with deep impurities

    A. Yu. Leĭderman, V. G. Stel’makh, М. Ф. Садыков

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  9. Possible influence of nonequilibrium carrier recombination rate saturation on photocell operation

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell TechnologiesApplied Solar Energy20084 иқтибос
    ABI

  10. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  11. On the theory of current–voltage characteristics of semiconductor diode structures with strong carrier accumulation

    A. Yu. Leĭderman, P. M. Karageorgy‐Alkalaev

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19793 иқтибос
    ABI

  12. Current Transfer Mechanism in a Thin-Based Heterosystem Based on A2B6 Compounds

    Sharifa B. Utamuradova, F. A. Giyasova, Khayot Bakhronov +3

    МақолаSemiconductor materials and interfacesEast European Journal of Physics20251 иқтибос
    ABI

  13. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19851 иқтибос
    ABI

  14. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19841 иқтибос
    ABI

  15. The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors

    D. A. Aronov, E. P. Kotov, Ya. P. Kotov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19750 иқтибос
    ABI

  16. Influence of X-irradiation on silicon Schottky diodes

    U.A. Shakirov, Marat S. Yunusov

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19760 иқтибос
    ABI

  17. Injection of degenerate electron-hole plasma

    Yu. A. Katulevskii

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19850 иқтибос
    ABI

  18. Computer Simulation of Current–Voltage Characteristics in Amorphous Silicon p–n Diode Structures under Impurity Photoexcitation

    S. A. Azimov, P. M. Karageoegy-Alkalaev, A. Yu. Leĭderman +1

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19860 иқтибос
    ABI

  19. Charge carrier recombination via isoelectronic traps involving excitons in compensated semiconductors

    Smagul Karazhanov

    МақолаSilicon and Solar Cell TechnologiesTechnical Physics Letters20000 иқтибос
    ABI