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Semiconductor materials and interfaces

771 ta ish

  1. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    MaqolaSemiconductor materials and interfacesEast European Journal of Physics20238 iqtibos
    ABI

  2. Decay of Impurity Clusters of Nickel and Cobalt Atoms in Silicon under the Influence of Pressure

    N. A. Turgunov, Elmurod Kh. Berkinov, D. Kh. Mamajonova

    MaqolaSilicon and Solar Cell TechnologiesJournal of Nano- and Electronic Physics20218 iqtibos
    ABI

  3. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    MaqolaSilicon and Solar Cell TechnologiesEast European Journal of Physics20238 iqtibos
    ABI

  4. Functional Capabilities of Silicon with Nanoclusters of Manganese Atoms

    M. K. Bakhadirkhanov, С. Б. Исамов, Н. Ф. Зикриллаев +4

    MaqolaSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20208 iqtibos
    ABI

  5. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    MaqolaSemiconductor materials and interfacesTechnical Physics20208 iqtibos
    ABI

  6. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4

    MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
    ABI

  7. Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2

    MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
    ABI

  8. The synergetic phenomena in photoexcited semiconductors

    P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19878 iqtibos
    ABI

  9. Some features of chemical interaction between a fast diffusing impurity and a group VI element in silicon

    M. K. Bakhadirkhanov, Sh. I. Askarov, Н. Норкулов

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19947 iqtibos
    ABI

  10. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, A.S. Saidov, A. Yu. Leĭderman

    MaqolaNear-Field Optical MicroscopyPhysics of the Solid State20147 iqtibos
    ABI

  11. Subbarrier and Overbarrier Electron Transfer through Multilayer Semiconductor Structures

    Rustam Yavkachovich Rasulov, N. Z. Mamadalieva, R. R. Sultanov

    MaqolaSemiconductor materials and interfacesRussian Physics Journal20207 iqtibos
    ABI

  12. Formation of targets and investigation of Mn4Si7 coatings produced by magnetron sputtering

    Б.Д. Игамов, Gunel Imanova, A.I. Kamardin +1

    MaqolaSemiconductor materials and interfacesBulletin of the Karaganda University Physics Series20237 iqtibos
    ABI

  13. Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

    Jo`shqin Abdullayev, I. B. Sapaev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  14. Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

    Jo`shqin Abdullayev

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20257 iqtibos
    ABI

  15. Electron microscopy characterization of higher manganese silicide film structure on silicon

    Andrey Orekhov, T. S. Kamilov, Anton S. Orekhov +3

    MaqolaSemiconductor materials and interfacesNanotechnologies in Russia20167 iqtibos
    ABI

  16. Effect of alkali metals on the electronic properties of grain boundaries on a polycrystalline silicon surface

    L. O. Olimov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20127 iqtibos
    ABI

  17. Specific features of magnetoresistance in overcompensated manganese-doped silicon

    M. K. Bakhadirkhanov, G. H. Mavlonov, X. M. Iliev +3

    MaqolaMagnetic Properties and ApplicationsSemiconductors20147 iqtibos
    ABI

  18. Classification of impurity voltaic effects in semiconductors and impurity voltaics

    М. С. Саидов

    MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20086 iqtibos
    ABI

  19. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    MaqolaSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20136 iqtibos
    ABI

  20. Current-voltage behavior of silicon containing nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев

    MaqolaSilicon Nanostructures and PhotoluminescenceInorganic Materials20146 iqtibos
    ABI

  21. Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

    A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2

    MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 iqtibos
    ABI

  22. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    MaqolaSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20236 iqtibos
    ABI

  23. Formation of Mn4Si7/Si(111), CrSi2/Si(111), and CoSi2/Si(111) Thin Film and Evaluation of Their Optically Direct and Indirect Band Gap

    K.T. Dovranov, Muradulla Normuradov, Kh.T. Davranov +1

    MaqolaSemiconductor materials and interfacesUkrainian Journal of Physics20246 iqtibos
    ABI

  24. Influence of Doping with Rare Earth Elements on the Parameters of Silicon Photocells

    Б. Э. Эгамбердиев, Sh. B. Utamurodova, С. А. Тачилин +6

    MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20226 iqtibos
    ABI

  25. Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

    A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov

    MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
    ABI