Ushbu ishga iqtibos qilgan ishlar

25 ta ish

Ish: Liquid-phase epitaxy of solid solutions (Ge2)1−x(ZnSe)x

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +1
MaqolaMaterial Science and ThermodynamicsSemiconductors200913 iqtibos
ABI
Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)1−x(ZnSe)x with Nanocrystals
A.S. Saidov, Sh. N. Usmonov, D. V. Saparov
MaqolaQuantum Dots Synthesis And PropertiesAdvances in Materials Science and Engineering20198 iqtibos
ABI
Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties
A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +4
MaqolaChalcogenide Semiconductor Thin FilmsPhysics of the Solid State20118 iqtibos
ABI
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, A.S. Saidov, A. Yu. Leyderman +2
MaqolaSemiconductor materials and interfacesSemiconductors20098 iqtibos
ABI
Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge2)y(ZnSe)z and their photoelectric properties
A.S. Saidov, D. V. Saparov, Sh. N. Usmonov +2
MaqolaChalcogenide Semiconductor Thin FilmsInternational Journal of Modern Physics B20226 iqtibos
ABI
Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells
A.S. Saidov, K. A. Amonov, B. R. Kutlimurotov
MaqolaSemiconductor materials and interfacesApplied Solar Energy20166 iqtibos
ABI
Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots
A.S. Saidov, С. З. Зайнабидинов, M. U. Kalanov +2
MaqolaSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 iqtibos
ABI
Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films
S.Z. Zaynabidinov, A.S. Saidov, A. Yu. Leĭderman +4
MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20165 iqtibos
ABI
Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots
A.S. Saidov, Sh. N. Usmonov, K. A. Amonov +2
MaqolaSemiconductor materials and interfacesApplied Solar Energy20174 iqtibos
ABI
Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures
A.S. Saidov, Sh. N. Usmonov, U. P. Asatova
MaqolaAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20103 iqtibos
ABI
Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions
A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
ABI
Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions
A.S. Saidov, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
MaqolaSemiconductor materials and interfacesTechnical Physics Letters20073 iqtibos
ABI
Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)
С. З. Зайнабидинов, A.S. Saidov, M. U. Kalanov +1
MaqolaSemiconductor materials and interfacesApplied Solar Energy20192 iqtibos
ABI
Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures
S.Z. Zaynabidinov, Kh. M. Madaminov
MaqolaIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20202 iqtibos
ABI
Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures
A.S. Saidov, Sh. N. Usmonov, U. Kh. Rakhmonov
MaqolaChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 iqtibos
ABI
Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures
Sh. N. Usmonov, A.S. Saidov, М. С. Саидов +2
MaqolaSemiconductor materials and interfacesApplied Solar Energy20091 iqtibos
ABI
Processes of Current Transport in p-Si-n-(Si2)1−y−z(GaP)y(ZnSe)z Heterostructure Produced by Liquid Phase Epitaxy
A.S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov +4
MaqolaSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology20221 iqtibos
ABI
Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions
A.Sh. Razzokov, A.S. Saidov, M.A. Shonazarova +2
MaqolaPhase-change materials and chalcogenidesEast European Journal of Physics20251 iqtibos
ABI
Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures
A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2
MaqolaSemiconductor materials and interfacesApplied Solar Energy20071 iqtibos
ABI
Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures
A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2
MaqolaSemiconductor materials and interfacesApplied Solar Energy20081 iqtibos
ABI
Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures
A.S. Saidov, М. С. Саидов, Sh. N. Usmonov +2
MaqolaSemiconductor materials and interfacesApplied Solar Energy20080 iqtibos
ABI
Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution
Sh. N. Usmonov, A.S. Saidov, М. С. Саидов +1
MaqolaInsect and Pesticide ResearchApplied Solar Energy20090 iqtibos
ABI
Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures
A.S. Saidov, U. Kh. Rakhmonov, A. Yu. Leĭderman
MaqolaSemiconductor materials and interfacesApplied Solar Energy20180 iqtibos
ABI
Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase
A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1
MaqolaSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice20200 iqtibos
ABI
Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y
SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV
MaqolaSemiconductor materials and interfacesComputational nanotechnology20220 iqtibos
ABI

Ushbu ishga iqtibos qilgan ishlar

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x

Structural Studies of the Epitaxial Layer of a Substitutional Solid Solution (GaAs)<sub>1−<i>x</i></sub>(ZnSe)<sub><i>x</i></sub> with Nanocrystals

Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy

Features of liquid-phase epitaxy of new solid solutions of (GaAs)1−y−z(Ge<sub>2</sub>)y(ZnSe)z and their photoelectric properties

Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

Photosensitivity of pSi-n(Si2)1–x–y(Ge2) x (ZnSe) y heterostructures with quantum dots

Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures

Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions

Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions

Synthesis, Structure and Electro-Physical Properties n-GaAs–p-(GaAs)1 –x–y(Ge2)x(ZnSe)y Heterostructures (Review)

Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures

Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

Morphological Studies of (Ge2)1-X(ZnSe)X Solid Solutions

Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

Spectral Photosensitivity and Temperature-Independent Volt–Ampere Characteristic of pSi–n(ZnSe)1 –x–y(Si2)x(GaP)y Structures

Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y