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Silicon and Solar Cell Technologies

568 works

  1. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    ArticleElectric Power Systems and Control19950 citations
    ABI

  2. The simulation of silicon doping by ion bombardment

    T.S. Pugacheva, F.G. Dzhurabekova, S.A. Lem

    ArticleIon-surface interactions and analysis19950 citations
    ABI

  3. Low temperature phase transition(PT) and defect formation(DF) in silicon with dioxide inclusions under X-ray irradiation.

    Sh. Makhkamov, S. N. Abdurakhmanova

    ArticleSilicon and Solar Cell Technologies19960 citations
    ABI

  4. Correlation Between Surface Morphology and Lattice Orientation of Microcrystalline Silicon

    Michio Kondo, T. Nishimiya, K. Saitoh +2

    ArticleThin-Film Transistor TechnologiesMRS Proceedings19970 citations
    ABI

  5. Annealing of radiation damage in Si. A molecular dynamics study

    Cristian D. Denton, V. Konoplev, A. Gras-Martí +1

    ArticleSilicon and Solar Cell TechnologiesRadiation effects and defects in solids19970 citations
    ABI

  6. High-temperature high-dose implantation of N+ and Al+ ions in 6H-SiC

    R.A. Yankov, M. Voelskow, W. Kreissig +6

    ArticleSilicon Carbide Semiconductor TechnologiesTechnical Physics Letters19970 citations
    ABI

  7. Temperature dependence of the electrical properties of polycrystalline silicon in the dark and in sunlight

    K. M. Doshchanov

    ArticleThin-Film Transistor TechnologiesSemiconductors19970 citations
    ABI

  8. Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

    R. Job, W. R. Fahrner, A. Ulyashin +3

    ArticleSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 citations
    ABI

  9. Influence of Fabrication Conditions on Properties of Si:Er Light-Emitting Structures

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Nikolaev +6

    ArticleSilicon Nanostructures and PhotoluminescenceMaterials science forum19970 citations
    ABI

  10. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

    ArticleSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 citations
    ABI

  11. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

    G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

    ArticleSemiconductor materials and interfacesTechnical Physics19970 citations
    ABI

  12. Investigation of boron distribution in semiconductors and MoRe alloys by SSNTD method

    M. Kadirova, N. Jumaev, Yu. F. Simakhin +1

    ArticleThermodynamic and Structural Properties of Metals and AlloysRadiation Measurements19970 citations
    ABI

  13. Polycrystalline silicon films doped with aluminum during deposition

    D. V. Shengurov

    ArticleThin-Film Transistor TechnologiesTechnical Physics Letters19970 citations
    ABI

  14. Silicon-based voltage-stabilized photovoltaic cell

    М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин

    Articlesolar cell performance optimizationTechnical Physics19970 citations
    ABI

  15. Physical model of the transition from a hexagonal to a cubic structure during growth of boron nitride under nitrogen and argon ion irradiation

    Yu. V. Trushin

    ArticleIon-surface interactions and analysisTechnical Physics Letters19970 citations
    ABI

  16. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

    R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

    ArticleSemiconductor materials and interfacesInterface Science19970 citations
    ABI

  17. Investigation of implanted layers in silicon carbide by a modulation photoreflection method

    H. Walther, H. Karge, К. Л. Муратиков +2

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19970 citations
    ABI

  18. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    ArticleSilicon and Solar Cell Technologies19970 citations
    ABI

  19. The study of influence of the duration of formation of p + -layer on the process of radiation defect production in silicon structures

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +2

    ArticleSilicon and Solar Cell Technologies19970 citations
    ABI

  20. The influence of gamma-radiation on DLTS spectra in silicon doped by selenium

    N.A. Sultanov, M. Tadzhibaev, E.T. Rakhimov

    ArticleSilicon and Solar Cell Technologies19970 citations
    ABI

  21. Carrier-removal rates under the action of gamma radiation in n-type compensated silicon

    Yunusov, M. Kаrimov, Zhalelov

    ArticleSilicon and Solar Cell TechnologiesUzbekiston Fizika Zhurnali19970 citations
    ABI

  22. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    ArticleSemiconductor materials and interfacesSemiconductors19980 citations
    ABI

  23. Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon

    A. N. Nazarov, V. M. Pinchuk, В. С. Лысенко +2

    ArticleSilicon and Solar Cell TechnologiesPhysical review. B, Condensed matter19980 citations
    ABI

  24. Diffusion of erbium in silicon

    С. З. Зайнабидинов, D.E. Nazirov, A. Zh. Akbarov +2

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 citations
    ABI

  25. Light-Induced Degradation Effects in a-Si:H Observed by Raman Scattering Measurements

    Paul Stradins, Michio Kondo, Nobuhiro Hata +1

    ArticleThin-Film Transistor TechnologiesMRS Proceedings19980 citations
    ABI