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Semiconductor materials and interfaces

771 works

  1. The solid-phase ion-plasma method and thermoelectric properties of thin CrSi2 films

    I. R. Bekpulatov, Gunel Imanova, S. H. Jabarov +8

    ArticleAdvanced Thermoelectric Materials and DevicesJournal of Materials Science Materials in Electronics20246 citations
    ABI

  2. Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots

    А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2

    ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20156 citations
    ABI

  3. Technology of production and photoelectric characteristics of AlB<sub>10</sub> heterojunctions based on silicon

    Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov

    ArticleSemiconductor materials and interfacesE3S Web of Conferences20236 citations
    ABI

  4. Three-junction Au/AlGaAs(n)/GaAs(p)/Ag photodiode

    A. V. Karimov, D. A. Karimova

    ArticleSemiconductor materials and interfacesMaterials Science in Semiconductor Processing20035 citations
    ABI

  5. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    ArticleSemiconductor materials and interfacesInorganic Materials20125 citations
    ABI

  6. Photoelectric and electrical properties of a reverse-biased p-Si/n-CdS/n +-CdS heterostructure

    Ш. А. Мирсагатов, I. B. Sapaev

    ArticleSemiconductor materials and interfacesInorganic Materials20145 citations
    ABI

  7. Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

    S.Z. Zaynabidinov, A. O. Kurbanov

    ArticleSilicon and Solar Cell TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences20195 citations
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20195 citations
    ABI

  9. Growth and Morphological Study of Graded-Gap Si–Si1 – xGex–GaAs Structures

    А. С. Саидов, A. Sh. Razzokov

    ArticleSemiconductor materials and interfacesCrystallography Reports20225 citations
    ABI

  10. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    ArticleSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry20235 citations
    ABI

  11. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    ArticleSemiconductor materials and interfacesJournal of Nano- and Electronic Physics20235 citations
    ABI

  12. Study of the electrophysical properties of higher manganese silicide (Mn4Si7) thin films and their temperature dependence

    I. R. Bekpulatov, Gunel Imanova, D.Kh. Nabiev +4

    ArticleSemiconductor materials and interfacesCeramics International20255 citations
    ABI

  13. The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov

    ArticleAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics20255 citations
    ABI

  14. Silicon with Clusters of Impurity Atoms as a Novel Material for Optoelectronics and Photovoltaic Energetics

    M. K. Bakhadyrhanov, U. X. Sodikov, D. Melibayev +4

    ArticleSilicon and Solar Cell TechnologiesJournal of Materials Science and Chemical Engineering20185 citations
    ABI

  15. Structure of thermoelectric films of higher manganese silicide on silicon according to electron microscopy data

    Andrey Orekhov, T. S. Kamilov, B.V. Ibragimova +2

    ArticleSemiconductor materials and interfacesSemiconductors20175 citations
    ABI

  16. Current-voltage characteristic of the injection photodetector based on In–n-CdS–p-Si–In structure

    I. B. Sapaev

    ArticleChalcogenide Semiconductor Thin FilmsSemiconductor Physics Quantum Electronics & Optoelectronics20195 citations
    ABI

  17. TO THE THEORY OF ELECTROMOTIVE FORCE GENERATED IN POTENTIAL BARRIER AT ULTRAHIGH FREQUENCY FIELD

    M. Ahmetoğlu, Gönül Kaynak, S. H. Shamirzaev +5

    ArticleSemiconductor Quantum Structures and DevicesInternational Journal of Modern Physics B20095 citations
    ABI

  18. Development of Technology for Obtaining Nanosized Heterostructured Films by Ion-Plasma Deposition

    Muradulla Normuradov, Ш. Т. Хожиев, K.T. Dovranov +3

    ArticleAdvanced Materials and Semiconductor TechnologiesUkrainian Journal of Physics20235 citations
    ABI

  19. Investigation of optical and electrophysical properties of Mn4Si7 coatings of different thickness

    Б.Д. Игамов, I. R. Bekpulatov, Gunel Imanova +2

    ArticleSemiconductor materials and interfacesPhysics and Chemistry of Solid State20245 citations
    ABI

  20. Research of the Impact of Silicon Doping with Holmium on its Structure and Properties Using Raman Scattering Spectroscopy Methods

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Alisher Khaitbaev +3

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20245 citations
    ABI

  21. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    ArticleSilicon and Solar Cell TechnologiesAIP conference proceedings20235 citations
    ABI

  22. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20165 citations
    ABI

  23. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20095 citations
    ABI

  24. Analysis of profiles of atomic distribution over the depth of Si-Me free nanofilm systems

    Б. Е. Умирзаков, З. А. Исаханов, М. К. Рузибаева +2

    ArticleSemiconductor materials and interfacesTechnical Physics20155 citations
    ABI

  25. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20075 citations
    ABI