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Sh. N. Usmonov

Работ: 45

Uzbek Academy of Sciences

  1. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2010Цитирований: 2
    ABI

  2. Impurity thermophotovoltaic effect of the grain boundaries of technical-grade silicon

    М. С. Саидов, А. С. Саидов, Sh. N. Usmonov

    СтатьяThermal Radiation and Cooling TechnologiesApplied Solar Energy2008Цитирований: 2
    ABI

  3. Anomalous temperature dependence of volt-ampere characteristics of pSi-n(Si2)1 −x (ZnSe) x structures

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 1
    ABI

  4. Peculiarities of the Current–Voltage Characteristic of n-GaP–p-(InSb)1 – x(Sn2)x Heterostructures

    А. С. Саидов, A. Yu. Leĭderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2020Цитирований: 1
    ABI

  5. Processes of Current Transport in p-Si-n-(Si<sub>2</sub>)<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i><sub>z</sub></i>(GaP)<i><sub>y</sub></i>(ZnSe)<i><sub>z</sub></i> Heterostructure Produced by Liquid Phase Epitaxy

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2022Цитирований: 1
    ABI

  6. Thermally Stimulated Transformation of Oxygen Atoms Between Phase States in a Silicon Single Crystal

    M. U. Kalanov, I. I. Sadikov, A. V. Khugaev +4

    СтатьяSilicon Nanostructures and PhotoluminescenceSilicon2024Цитирований: 1
    ABI

  7. Growth and photosensitivity of pSi-n(GaSb)1 − x (Si2) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2007Цитирований: 1
    ABI

  8. Photosensitivity of pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y , pSi-n(GaSb)1 − x − y (Si2) x (GaAs) y ,-n(GaSb) structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 1
    ABI

  9. Photothermovoltaic effect in a pSi-n(Si2)1 − x − y (ZnSe) x (GaP) y (0 ≤ x ≤ 0.88, 0 ≤ y ≤ 0.09) structure

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1

    СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2013Цитирований: 1
    ABI

  10. Thermovoltaic properties of technical silicon melted by solar radiation

    А. С. Саидов, A. A. Abakumov, М. С. Саидов +2

    СтатьяMaterial Science and ThermodynamicsApplied Solar Energy2007Цитирований: 1
    ABI

  11. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 0
    ABI

  12. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    СтатьяInsect and Pesticide ResearchApplied Solar Energy2009Цитирований: 0
    ABI

  13. Эффект инжекционного обеднения в p-Si-n-(Si-=SUB=-2-=/SUB=-)-=SUB=-1-x-=/SUB=-(ZnSe)-=SUB=-x-=/SUB=- (0≤ x≤0.01) гетероструктуре

    А. С. Саидов, А.Ю. Лейдерман, Sh. N. Usmonov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceФизика и техника полупроводников2018Цитирований: 0
    ABI

  14. Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure

    А. С. Саидов, Sh. N. Usmonov, A B Karshiev +1

    СтатьяSilicon Nanostructures and PhotoluminescenceIOP Conference Series Earth and Environmental Science2022Цитирований: 0
    ABI

  15. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    СтатьяDiamond and Carbon-based Materials ResearchPhysical Sciences and Technology2023Цитирований: 0
    ABI

  16. Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds

    А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0
    ABI

  17. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  18. Structural Features of the Epitaxial Layer of the (GaAs)&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;&lt;sub&gt;−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt;(Ge&lt;sub&gt;2&lt;/sub&gt;)&lt;i&gt;&lt;sub&gt;y&lt;/sub&gt;&lt;/i&gt;(ZnSe)&lt;i&gt;&lt;sub&gt;z&lt;/sub&gt;&lt;/i&gt; Solid Solution Grown from a Bismuth Solution Melt

    А. С. Саидов, M. U. Kalanov, D. V. Saparov +4

    СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0
    ABI

  19. Growing Perfect Single-Crystal Epitaxial Films of (Si&lt;sub&gt;2&lt;/sub&gt;)&lt;sub&gt;1-x&lt;/sub&gt;(GaN)&lt;sub&gt;x&lt;/sub&gt; Solid Solutions on Si (111) Substrates from the Liquid Phase

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +5

    СтатьяGaN-based semiconductor devices and materialsActa Physica Polonica A2025Цитирований: 0
    ABI

  20. Development and Investigation of Semiconductor Detectors of Ionizing Radiation Based on p-Si/n-InP Heterostructures

    S. A. Radzhapov, A. S. Saidov, Sh. N. Usmonov +1

    СтатьяAdvanced Materials and Semiconductor TechnologiesInstruments and Experimental Techniques2026Цитирований: 0
    ABI