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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Equilibrium states of an ion-beam plasma with magnetized electrons at low pressures

    S. V. Dudin, А. В. Зыков, А. В. Ушаков +1

    СтатьяPlasma Diagnostics and ApplicationsTechnical Physics Letters1998Цитирований: 0
    ABI

  2. Direct bonding of silicon wafers with a diffusion layer

    V. B. Voronkov, E. G. Guk, В. А. Козлов +1

    Статья3D IC and TSV technologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  3. Modulation of the polarization of semiconductor laser radiation at constant output power

    G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

    СтатьяPhotonic and Optical DevicesTechnical Physics Letters1998Цитирований: 0
    ABI

  4. On the generation of radiation defects by accelerated ions in silicon

    А. В. Иванов, N. B. Strokan

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters1998Цитирований: 0
    ABI

  5. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

    F. Yu. Soldatenkov, V. P. Ulin, A. A. Yakovenko +3

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  6. Investigation of a glow discharge in a mixture of Ar and OH

    A. Ya. Vul’, С. В. Кидалов, V. M. Milenin +2

    СтатьяPlasma Applications and DiagnosticsTechnical Physics Letters1999Цитирований: 0
    ABI

  7. New efficient low-pressure gas-discharge source of optical radiation using hydroxyl OH

    A. Ya. Vul’, С. В. Кидалов, V. M. Milenin +2

    СтатьяLaser Design and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  8. Deep diffusion doping of macroporous silicon

    E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  9. Investigation of oxidation and segregation processes at the surface of titanium nickelide

    Sergey Belyaev, Ф. З. Гильмутдинов, О. М. Канунникова

    СтатьяMaterial Properties and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  10. Multiple-tip liquid-metal field emitter

    O. P. Korovin, E. O. Popov, V. N. Shrednik +1

    СтатьяElectrohydrodynamics and Fluid DynamicsTechnical Physics Letters1999Цитирований: 0
    ABI

  11. 13C enrichment of fullerenes

    Д. В. Афанасьев, G. A. Baranov, А. А. Богданов +4

    СтатьяFullerene Chemistry and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  12. Stable pinch in the SPEED 2 plasma focus

    W. Kies, G. Decker, U. Berntien +5

    СтатьяPlasma Diagnostics and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  13. Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation

    V. A. Perevoshchikov, V. D. Skupov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  14. Thermoelectrodynamic loss of material by a solid armature in a railgun as a cause of velocity limitation

    É. M. Drobyshevskii, E.N. Kolesnikova, V. S. Yuferev

    СтатьяElectromagnetic Launch and Propulsion TechnologyTechnical Physics Letters1999Цитирований: 0
    ABI

  15. Component composition and strain of barium-strontium titanate ferroelectric films

    S. F. Karmanenko, А. И. Дедык, N. N. Isakov +4

    СтатьяFerroelectric and Piezoelectric MaterialsTechnical Physics Letters1999Цитирований: 0
    ABI

  16. Mechanism for thermal destruction of polystyrene grafted to fullerene C60

    Б. М. Гинзбург, A. O. Pozdnyakov, O. F. Pozdnyakov +1

    СтатьяFullerene Chemistry and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  17. Influence of charged particles on the fullerene formation process

    Д. В. Афанасьев, G. A. Dyuzhev, V. I. Karataev

    СтатьяFullerene Chemistry and ApplicationsTechnical Physics Letters1999Цитирований: 0
    ABI

  18. Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber

    A. E. Gubenko, G. Venus, I. M. Gadzhiev +1

    СтатьяOptical Network TechnologiesTechnical Physics Letters1999Цитирований: 0
    ABI

  19. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures

    A. V. Sakharov, W. V. Lundin, V. A. Semenov +4

    СтатьяGaN-based semiconductor devices and materialsTechnical Physics Letters1999Цитирований: 0
    ABI

  20. Gas-sensitive properties of copper-containing fullerene membranes

    V. F. Masterov, A. V. Prikhod’ko, O. I. Kon’kov +2

    СтатьяGas Sensing Nanomaterials and SensorsTechnical Physics Letters1999Цитирований: 0
    ABI

  21. Use of lead as a neutral solvent for obtaining solid Ga1−xInxAsySb1−y solutions

    И. А. Андреев, E. V. Kunitsyna, Yu. V. Solov’ev

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters1999Цитирований: 0
    ABI

  22. Investigation of the action of ultrahigh pressures on carbon nanotubes

    A. M. Germanskii, G. A. Dyuzhev, Dmitri Novikov +2

    СтатьяCarbon Nanotubes in CompositesTechnical Physics Letters1999Цитирований: 0
    ABI

  23. Temperature effect on the field emission from zirconium islands on tungsten

    E. L. Kontorovich, T. I. Sudakova, V. N. Shrednik

    СтатьяVacuum and Plasma ArcsTechnical Physics Letters1999Цитирований: 0
    ABI

  24. Scanning tunneling spectroscopy of amorphous carbon: Tunneling model

    V. I. Ivanov-Omskiĭ, A. B. Lodygin, S. G. Yastrebov

    СтатьяDiamond and Carbon-based Materials ResearchTechnical Physics Letters1999Цитирований: 0
    ABI

  25. Influence of electrode commutation on magnetohydrodynamic flow in a supersonic diffuser

    Yu. P. Golovachev, S. Sushchikh

    СтатьяPlasma and Flow Control in AerodynamicsTechnical Physics Letters1999Цитирований: 0
    ABI