Advanced Materials Characterization Techniques
Работ: 160
<title>Ion channeling and implantation into Cu (100) and Cu<formula><inf><roman>3</roman></inf></formula>Au (100)</title>
СтатьяCrystallography and Radiation PhenomenaProceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE2007Цитирований: 0ABIObtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2
СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0ABIInvestigation of profiles of the distribution of ion-implanted Mn atoms using the rutherford back scattering method and the influence of thermal annealing on them
Б. Э. Эгамбердиев, Б.Ч. Холлиев, A. S. Mallaev
СтатьяIon-surface interactions and analysisSurface Engineering and Applied Electrochemistry2007Цитирований: 0ABIKreking prirodnogo bituma v prisutstvii nanorazmernykh poroshkov Fe2O3 i Ni
СтатьяSurface Treatment and CoatingsPerspektivnye materialy s ierarkhicheskoy strukturoy dlya novykh tekhnologiy i nadezhnykh konstruktsiy» i «Khimiya nefti i gaza» v ramkakh Mezhdunarodnogo simpoziuma «Ierarkhicheskie materialy: razrabotka i prilozheniya dlya novykh tekhnologiy i nadezhnykh konstruktsiy2018Цитирований: 0ABIPHASE TRANSITION PECULIARITIES IN BaTiO3-BASED PEROVSKITE SUPERLATTICES
H Tabata, H Tanaka, T Kawai +6
СтатьяCatalysis and Oxidation ReactionsPerspektivnye materialy s ierarkhicheskoy strukturoy dlya novykh tekhnologiy i nadezhnykh konstruktsiy» i «Khimiya nefti i gaza» v ramkakh Mezhdunarodnogo simpoziuma «Ierarkhicheskie materialy: razrabotka i prilozheniya dlya novykh tekhnologiy i nadezhnykh konstruktsiy2018Цитирований: 0ABIDetermining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques
Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev
ГлаваSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)2021Цитирований: 0ABI