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Работы, на которые ссылается эта работа

Работ: 25

Работа: Effective Charge of Mn and Ni Impurity Atoms in Silicon Under the Influence of An External Electric Field

  1. SPECTRAL DEPENDENCE OF THE PHOTOCONDUCTIVITY OF GеxSi1 – x TYPE GRADED-GAP STRUCTURES OBTAINED BY DIFFUSION TECHNOLOGY

    Н. Ф. Зикриллаев, S. Koveshnikov, С. Б. Исамов +2

    СтатьяSemiconductor materials and interfacesSemiconductors2022Цитирований: 8
    ABI

  2. Current Status of Silicon Studies with GexSi1-x Binary Compounds and Possibilities of Their Applications in Electronics

    Н. Ф. Зикриллаев, G. A. Kushiev, Sergey V. Koveshnikov +3

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 8
    ABI

  3. A Surface Study of Si Doped Simultaneously with Ga and Sb

    X.M. Iliyev, Sobir B. Isamov, B. O. Isakov +2

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 7
    ABI

  4. Photovoltaic Properties of Silicon Doped with Manganese and Germanium

    Н. Ф. Зикриллаев, Habibjon Kushiev, С. Б. Исамов +2

    Статья2023Цитирований: 7
    ABI

  5. X-Ray Diffraction and Raman Spectroscopy Analyses of GaSb-Enriched Si Surface Formed by Applying Diffusion Doping Technique

    Xalmurat M. Iliyev, В. Б. Оджаев, Sobir B. Isamov +5

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 6
    ABI

  6. Development and Creation of a New Class of Graded-Gap Structures Based on Silicon with the Participation of Zn and Se Atoms

    Н. Ф. Зикриллаев, O. B. Tursunov, G. A. Kushiev

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2023Цитирований: 5
    ABI

  7. Optical Properties of GexSi1 – x Binary Compounds in Silicon

    Н. Ф. Зикриллаев, Habibjon Kushiev, Shahzodbek I. Hamrokulov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2023Цитирований: 5
    ABI

  8. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Статья2017Цитирований: 5
    ABI

  9. Gettering properties of nickel in silicon photocells

    Bakhadirkhanov M.K., Z. T. Kenzhaev, Turekeev Kh. S. +2

    СтатьяSemiconductor materials and interfacesЖурнал технической физики2022Цитирований: 4
    ABI

  10. Enhancing the Efficiency of Silicon Solar Cells through Nickel Doping

    Z. T. Kenzhaev, Н. Ф. Зикриллаев, K. S. Ayupov +3

    СтатьяSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry2023Цитирований: 4
    ABI

  11. Effect of nickel doping on the spectral sensitivity of silicon solar cells

    Nurillo Zikrillayev, Z. T. Kenzhaev, Timur Ismailov +2

    СтатьяSilicon and Solar Cell TechnologiesE3S Web of Conferences2023Цитирований: 4
    ABI

  12. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    СтатьяSemiconductor materials and interfacesPhysical Sciences and Technology2024Цитирований: 3
    ABI

  13. Fabrication of ZnS layer on silicon nanopillars surface for photoresistor application

    Jing Liu, Shuaipeng Yue

    Статья2022Цитирований: 3
    ABI

  14. The Mechanism of the Formation of Binary Compounds Between Zn and S Impurity Atoms in Si Crystal Lattice

    Н. Ф. Зикриллаев, Maruf K. Khakkulov, B. O. Isakov

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 2
    ABI

  15. New Technological Solution for the Tailoring of Multilayer Silicon-based Systems with Binary Nanoclusters Involving Elements of Groups III and V

    N. F. Zikrillayev, С. Б. Исамов, B. O. Isakov +4

    СтатьяSilicon Nanostructures and PhotoluminescenceJournal of Nano- and Electronic Physics2023Цитирований: 2
    ABI

  16. The Elemental Composition Investigation of Silicon Doped with Gallium and Antimony Atoms

    Х. М. Илиев, S. Koveshnikov, B. O. Isakov +3

    СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2024Цитирований: 2
    ABI

  17. III–V compound materials and lasers on silicon

    Wenyu Yang, Yajie Li, Fangyuan Meng +6

    Статья2019Цитирований: 2
    ABI

  18. Photoluminescence and I–V characteristics of ZnS grown on silicon nanoporous pillar array

    Hai Xu, He Shun Jia, Zhi Tao Yao +1

    Статья2008Цитирований: 2
    ABI

  19. ZnS thin film deposition on Silicon and glass substrates by Thermionic vacuum Arc

    Mehmet Özkan, N. Ekem, Şuat Pat +1

    Статья2011Цитирований: 2
    ABI

  20. Handbook Series on Semiconductor Parameters

    Книга1996Цитирований: 2
    ABI

  21. Negative magnetoresistance in silicon doped with manganese

    Н. Ф. Зикриллаев, Х. М. Илиев, Г. Х. Мавлонов +2

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 1
    ABI

  22. Effect of GaSb Compound on Silicon Bandgap Energy

    Х. М. Илиев, Н. Ф. Зикриллаев, K. S. Ayupov +4

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  23. The Prospects of Obtaining a New Material with a Hetero-Baric Structure Gexsi1 – x-Si Based on Silicon for Photo Energy Applications

    Habibjon Kushiev, B. O. Isakov, U. X. Mukhammadjonov

    СтатьяMaterial Properties and ApplicationsJournal of Nano- and Electronic Physics2024Цитирований: 1
    ABI

  24. Electrodifusion of Manganese Atoms in Silicon

    Xalmurat M. Iliyev, Zafar B. Khudoynazarov, B. O. Isakov +2

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2024Цитирований: 1
    ABI

  25. Без названия

    ДругоеЦитирований: 1
    ABI