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Работы, на которые ссылается эта работа

Работ: 22

Работа: Temperature dependence changes in the physical and chemical properties of ZnO detected by powder diffractometry

  1. Helical microtubules of graphitic carbon

    Sumio Iijima

    Статья1991Цитирований: 24
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  4. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  5. Investigation of Coatings Formed by Thermal Oxidation on Monocrystalline Silicon

    Bakhrom Igаmоv, Gunel Imanova, A.I. Kamardin +1

    СтатьяSurface Roughness and Optical MeasurementsIntegrated ferroelectrics2024Цитирований: 12
    ABI

  6. Investigation of structural and optical properties of zirconia dioxide nanoparticles by radiation and thermal methods

    Gunel Imanova, T.N. Agayev, S. H. Jabarov

    Статья2020Цитирований: 12
    ABI

  7. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
    ABI

  8. Formation of thin Crsi <sub>2</sub> films by the solid-phase ion-plasma method and their thermoelectric properties

    I. R. Bekpulatov, Gunel Imanova, Б. Е. Умирзаков +5

    СтатьяAdvanced Thermoelectric Materials and DevicesMaterials Research Innovations2024Цитирований: 9
    ABI

  9. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  10. Modeling defect formation in nano-ZrO<sub>2</sub> under He and H+ irradiation

    Gunel Imanova

    Статья2024Цитирований: 9
    ABI

  11. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

    Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

    СтатьяX-ray Diffraction in CrystallographyJournal of Crystal Growth2024Цитирований: 8
    ABI

  12. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2020Цитирований: 8
    ABI

  13. Gamma radiation mediated catalytic process for hydrogen generation by water decomposition on NaNO3 surface

    Gunel Imanova, S. H. Jabarov, T.N. Agayev +4

    СтатьяAmmonia Synthesis and Nitrogen ReductionJournal of Porous Materials2024Цитирований: 7
    ABI

  14. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4
    ABI

  15. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    СтатьяSemiconductor materials and interfacesMaterials Research Innovations2024Цитирований: 3
    ABI

  16. The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals

    Andrey Orekhov, V. V. Klechkovskaya, E. V. Rakova +4

    Статья2017Цитирований: 2
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI

  19. Без названия

    ДругоеЦитирований: 1
    ABI

  20. Без названия

    ДругоеЦитирований: 1
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI