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Работы, цитирующие эту работу

Работ: 10

Работа: Concepts in photoconductivity and allied problems

  1. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
    ABI

  2. Anomalous Photoelectric Phenomena in Silicon with Nanoclusters of Manganese Atoms

    М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSemiconductor materials and interfacesSemiconductors2021Цитирований: 8
    ABI

  3. Exclusion Effect in Semiconductors with Non-Injecting Contacts

    D. A. Aronov, P. I. Knigin, Yu. S. Korolev +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 7
    ABI

  4. Infrared quenching of photoconduction in silicon with multicharge manganese clusters

    M. K. Bachadyrchanov, С. Б. Исамов, Н. Ф. Зикриллаев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry2013Цитирований: 6
    ABI

  5. On the theory of double injection in semiconductors with continuous distribution of trapping levels within the Gap

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1979Цитирований: 3
    ABI

  6. Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures

    T. S. Kamilov, I. V. Ernst, A. Yu. Samunin

    СтатьяSemiconductor materials and interfacesTechnical Physics2014Цитирований: 2
    ABI

  7. The effect of γ radiation on the properties of p-n-p structures based on polycrystalline cadmium telluride

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2003Цитирований: 2
    ABI

  8. Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

    М. К. Бахадырханов, С. Б. Исамов, Х. М. Илиев +1

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 1
    ABI

  9. Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

    А. С. Саидов, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2015Цитирований: 0
    ABI

  10. Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

    Э. У. Арзикулов, M. Radzhabova, S. N. +4

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignResearch Square2024Цитирований: 0
    ABI