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Работы, цитирующие эту работу

Работ: 14

Работа: Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

  1. Influence of deformation and light on the diffusion capacity and differential resistance of the p-n junction of a strong electromagnetic field

    G. Gulyamov, M. G. Dadamirzayev, M. O. Qosimova +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 5
    ABI

  2. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    СтатьяSilicon and Solar Cell TechnologiesSemiconductors2009Цитирований: 5
    ABI

  3. The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

    D. A. Aronov, R. R. Kabulov, Yu. M. Yuabov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1988Цитирований: 4
    ABI

  4. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2004Цитирований: 2
    ABI

  5. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    СтатьяSilicon and Solar Cell TechnologiesMaterials science forum2005Цитирований: 2
    ABI

  6. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1985Цитирований: 1
    ABI

  7. Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures

    S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1984Цитирований: 1
    ABI

  8. Parameters of silicon microdiodes fabricated by selective epitaxy

    M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2

    СтатьяSilicon and Solar Cell TechnologiesThin Solid Films1976Цитирований: 0
    ABI

  9. Influence of Irradiation on Excess Currents in SiC pn Structures

    Anatoly M. Strel’chuk, Vitalii V. Kozlovski, A. А. Lebedev +1

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2005Цитирований: 0
    ABI

  10. About the Nature of Recombination Current in 4H-SiC pn Structures

    Anatoly M. Strel’chuk, A.V. Mashichev, A. А. Lebedev +2

    СтатьяSilicon Carbide Semiconductor TechnologiesMaterials science forum2006Цитирований: 0
    ABI

  11. Determining certain physical settings of photocells

    A. Yu. Leyderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2011Цитирований: 0
    ABI

  12. The Nonideality Coefficient of Current-Voltage Characteristics for Asymmetric p-n-Junctions in a Microwave Field

    G. Gulyamov, Dadamirzaev Muhammadjon Gulomkodirovich, Hasan Yusupovich Mavlyanov

    СтатьяSilicon and Solar Cell TechnologiesJournal of Applied Mathematics and Physics2015Цитирований: 0
    ABI

  13. Peculiarities of the Current Characteristics of a Solar Cell Based on Polycrystalline Silicon at Different Powers of Illumination by Sunlight

    R. R. Kabulov, S. Yu. Gerasimenko, M. U. Khajiev

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2022Цитирований: 0
    ABI

  14. P-I-N PHOTODIODES WITH GETTERS CREATED BY ION IMPLANTATION OF MAIN DOPING IMPURITIES

    V.B. Odzhaev, A. N. Pyatlitski, V. S. Prasalovich +6

    СтатьяSilicon and Solar Cell TechnologiesHERALD OF POLOTSK STATE UNIVERSITY Series С FUNDAMENTAL SCIENCES2025Цитирований: 0
    ABI