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Ушбу иш иқтибос қилган ишлар

22 та иш

Иш: Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    МақолаSemiconductor materials and interfacesInternational Journal of Modern Physics B202222 иқтибос
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    МақолаSemiconductor materials and interfacesApplied Solar Energy201921 иқтибос
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques202117 иқтибос
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    МақолаSemiconductor materials and interfacesModern Physics Letters B202317 иқтибос
    ABI

  5. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    МақолаMetal and Thin Film MechanicsTechnical Physics201513 иқтибос
    ABI

  6. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    МақолаSemiconductor materials and interfacesJournal of Nano- and Electronic Physics202213 иқтибос
    ABI

  7. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201712 иқтибос
    ABI

  8. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    МақолаSemiconductor materials and interfacesSemiconductor Science and Technology199911 иқтибос
    ABI

  9. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    МақолаSemiconductor materials and interfacesE3S Web of Conferences20239 иқтибос
    ABI

  10. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    МақолаPhotocathodes and Microchannel PlatesTechnical Physics20198 иқтибос
    ABI

  11. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    МақолаSemiconductor materials and interfacesTechnical Physics20208 иқтибос
    ABI

  12. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    МақолаIon-surface interactions and analysisAIP conference proceedings20224 иқтибос
    ABI

  13. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    МақолаSemiconductor materials and devicesTechnical Physics Letters20204 иқтибос
    ABI

  14. Resistivity and the Hall effect for thin MnSi<sub>1.73</sub>films

    C. A. Krontiras, K Promoni, M. Roilos

    Мақола19883 иқтибос
    ABI

  15. Effect of quantum-well structures on the thermoelectric figure of merit

    L. D. Hicks, M. S. Dresselhaus

    Мақола19933 иқтибос
    ABI

  16. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    МақолаIon-surface interactions and analysisAIP conference proceedings20222 иқтибос
    ABI

  17. Enhancement of thermoelectric properties in nanocrystalline M–Si thin film composites (M=Cr, Mn)

    S. V. Novikov, А. Т. Бурков, J. Schumann

    Мақола20122 иқтибос
    ABI

  18. Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties

    А. Т. Бурков, S. V. Novikov, J. Schumann

    Мақола20122 иқтибос
    ABI

  19. The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals

    Andrey Orekhov, V. V. Klechkovskaya, E. V. Rakova +4

    Мақола20172 иқтибос
    ABI

  20. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI

  21. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  22. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI