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Mahsulotlar

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Lotin
Oʻzbek

Semiconductors

118 ta ish

Jurnal · ISSN 1063-7826

  1. Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

    L. S. Vavilova, V. A. Kapitonov, A. V. Murashova +1

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20000 iqtibos
    ABI

  2. Excess tunneling currents in p-Si-n-3C-SiC heterostructures

    Smagul Karazhanov, I. G. Atabaev, Timur Saliev +2

    MaqolaSilicon Carbide Semiconductor TechnologiesSemiconductors20010 iqtibos
    ABI

  3. Resonance tunneling of X-electrons in AlAs/GaAs(111) structures: Pseudopotential calculations and models

    G. F. Karavaev, В. Н. Чернышов

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20010 iqtibos
    ABI

  4. Nonlinear and dynamic properties of charge transport in polycrystalline silicon under optical illumination

    K. M. Doshchanov

    MaqolaThin-Film Transistor TechnologiesSemiconductors20010 iqtibos
    ABI

  5. Effect of doping with nitrogen on electrical properties and erbium electroluminescence of a-Si:H(Er) films

    O. I. Kon’kov, E. I. Terukov, L. S. Granitsyna

    MaqolaThin-Film Transistor TechnologiesSemiconductors20010 iqtibos
    ABI

  6. On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta

    Marat S. Yunusov, M. Kаrimov, M. A. Dzhalelov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20010 iqtibos
    ABI

  7. The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films

    Н. Р. Рахимов, U. S. Babakhodzhaev, Kh. Yu. Mavlyanov +1

    MaqolaSurface Roughness and Optical MeasurementsSemiconductors20010 iqtibos
    ABI

  8. Rapid thermal annealing of gallium arsenide implanted with sulfur ions

    V. M. Ardyshev, M. V. Ardyshev

    MaqolaSemiconductor materials and interfacesSemiconductors20020 iqtibos
    ABI

  9. Synthesis of new carbon-nitrogen nanoclusters by annealing diamond-like carbon films in nitrogen

    I. A. Faĭzrakhmanov, В. В. Базаров, N. V. Kurbatova +2

    MaqolaDiamond and Carbon-based Materials ResearchSemiconductors20030 iqtibos
    ABI

  10. Study of photocapacitance in diodes fabricated from silicon doped with vanadium

    Kh. T. Igamberdiev, A. T. Mamadalimov, Р. А. Муминов +2

    MaqolaSemiconductor materials and interfacesSemiconductors20030 iqtibos
    ABI

  11. Diffusion of ytterbium in silicon

    D. É. Nazyrov

    MaqolaGraphite, nuclear technology, radiation studiesSemiconductors20030 iqtibos
    ABI

  12. Local symmetry of the Pb1−xSnxSe lattice near the zero-gap state

    É. S. Khuzhakulov

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20040 iqtibos
    ABI

  13. The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

    V. N. Brudnyı̆, S. N. Grinyaev, N. G. Kolin

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20050 iqtibos
    ABI

  14. Electron exchange between neutral and ionized germanium centers in PbSe

    E. I. Terukov, É. S. Khuzhakulov

    MaqolaSemiconductor materials and interfacesSemiconductors20050 iqtibos
    ABI

  15. Mössbauer study of the Ge two-electron donor centers in PbSe

    Е. И. Теруков, E. S. Khuzhakulov

    MaqolaSemiconductor materials and interfacesSemiconductors20050 iqtibos
    ABI

  16. Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese

    М. К. Бахадырханов, О. Э. Саттаров, Х. М. Илиев +2

    MaqolaSemiconductor materials and interfacesSemiconductors20050 iqtibos
    ABI

  17. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20060 iqtibos
    ABI

  18. Diffusion of yittrium in silicon

    D. É. Nazyrov, Muratali Bazarbaev, A. A. Iminov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20060 iqtibos
    ABI

  19. Diffusion of terbium in silicon

    D. É. Nazyrov

    MaqolaGraphite, nuclear technology, radiation studiesSemiconductors20060 iqtibos
    ABI

  20. Scattering of holes by the GaAs/AlAs (111) and (110) interfaces

    G. F. Karavaev, В. Н. Чернышов

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20060 iqtibos
    ABI

  21. Photovoltaic converters based on GaAs and AlGaAs epitaxial layers on GaAs substrates with developed surface area

    И. Н. Арсентьев, A. V. Bobyl, O. Yu. Borkovskaya +7

    Maqolasolar cell performance optimizationSemiconductors20060 iqtibos
    ABI

  22. A Mössbauer study of Eu donor centers in PbS

    É. S. Khuzhakulov

    MaqolaAdvanced Condensed Matter PhysicsSemiconductors20060 iqtibos
    ABI

  23. Dynamics of the defects recharging in coarse-grained p-CdTe films

    Kh. Kh. Ismailov, Zh. Zhanabergenov, Ш. А. Мирсагатов +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20060 iqtibos
    ABI

  24. Nonlinear effects in spin relaxation of cavity polaritons

    D. D. Solnyshkov, I. A. Shelykh, M. M. Glazov +5

    MaqolaStrong Light-Matter InteractionsSemiconductors20070 iqtibos
    ABI

  25. Intensification of electroluminescence of ZnSe:(Te, O) crystals as a result of irradiation with γ-ray photons

    D. B. Él’murotova, Э. М. Ибрагимова

    MaqolaTerahertz technology and applicationsSemiconductors20070 iqtibos
    ABI