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Mahsulotlar

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Lotin
Oʻzbek

Semiconductors

118 ta ish

Jurnal · ISSN 1063-7826

  1. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20144 iqtibos
    ABI

  2. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    MaqolaSemiconductor materials and interfacesSemiconductors20204 iqtibos
    ABI

  3. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    MaqolaSemiconductor materials and interfacesSemiconductors20184 iqtibos
    ABI

  4. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    MaqolaPhotonic and Optical DevicesSemiconductors20124 iqtibos
    ABI

  5. Some features of photocurrent generation in single- and multibarrier photodiode structures

    A. V. Karimov, D. M. Yodgorova

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20103 iqtibos
    ABI

  6. Features of the performance of a transient voltage suppressor in the pulsed mode

    A. Z. Rahmatov, O. A. Abdulkhaev, A. V. Karimov +1

    MaqolaPulsed Power Technology ApplicationsSemiconductors20133 iqtibos
    ABI

  7. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20143 iqtibos
    ABI

  8. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    MaqolaZnO doping and propertiesSemiconductors20213 iqtibos
    ABI

  9. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    MaqolaAdvanced Semiconductor Detectors and MaterialsSemiconductors20093 iqtibos
    ABI

  10. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    MaqolaSilicon Nanostructures and PhotoluminescenceSemiconductors20153 iqtibos
    ABI

  11. Study of the intermediate layer at the n +-CdS/p-CdTe interface

    S. A. Muzafarova, B. U. Aĭtbaev, Ш. А. Мирсагатов +2

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20083 iqtibos
    ABI

  12. On the theory of the two-photon linear photovoltaic effect in n-GaP

    Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov

    MaqolaChalcogenide Semiconductor Thin FilmsSemiconductors20163 iqtibos
    ABI

  13. Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods

    S. S. Kurbanov, Ш.З. Уролов, Z. Sh. Shaymardanov +2

    MaqolaZnO doping and propertiesSemiconductors20183 iqtibos
    ABI

  14. Dynamic strain-sensitive characteristics of the Schottky-barrier diodes under a pulsed uniform pressure

    О. О. Маматкаримов, С. З. Зайнабидинов, Azizbek Abduraimov +2

    MaqolaElectromagnetic Launch and Propulsion TechnologySemiconductors20002 iqtibos
    ABI

  15. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    MaqolaZnO doping and propertiesSemiconductors20072 iqtibos
    ABI

  16. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    MaqolaSemiconductor materials and interfacesSemiconductors20182 iqtibos
    ABI

  17. Effect of Uniaxial Elastic Deformation on the Current–Voltage Characteristic of Surface-Barrier Sb–p-Si〈Mn〉–Au Diodes

    О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov

    MaqolaSemiconductor materials and interfacesSemiconductors20202 iqtibos
    ABI

  18. Effect of the Implantation of Al+ Ions on the Composition, Electronic and Crystalline Structure of the GaP(111) Surface

    S. B. Donaev, Б. Е. Умирзаков

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20202 iqtibos
    ABI

  19. Eddy currents in the p–n junction in a microwave field

    S. H. Shamirzaev, G. Gulyamov, М. Г. Дадамирзаев +1

    MaqolaSurface and Thin Film PhenomenaSemiconductors20092 iqtibos
    ABI

  20. Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

    M. G. Dadamirzayev

    MaqolaGyrotron and Vacuum Electronics ResearchSemiconductors20112 iqtibos
    ABI

  21. Size Quantization in n-GaP

    Rustam Yavkachovich Rasulov, P. Ya. Rasulov, I. Éshboltaev +1

    MaqolaSemiconductor Quantum Structures and DevicesSemiconductors20202 iqtibos
    ABI

  22. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20001 iqtibos
    ABI

  23. Electrical properties of semiconductors with pair defects

    Smagul Karazhanov, É. V. Kanaki

    MaqolaSilicon and Solar Cell TechnologiesSemiconductors20001 iqtibos
    ABI

  24. Diffusion of europium in silicon

    D. É. Nazyrov

    MaqolaAdvanced Materials Characterization TechniquesSemiconductors20031 iqtibos
    ABI

  25. The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass

    П. Б. Парчинский, С. И. Власов, Aslan Nasirov

    MaqolaGlass properties and applicationsSemiconductors20041 iqtibos
    ABI