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Semiconductor materials and devices

277 ta ish

  1. Tuning Surface Charge and Defects in Zinc Oxide Crystals Via Low-Energy Electron Irradiation

    Utkirjon Sharopov, Kamoliddin Samiev, М. К. Курбанов +7

    MaqolaZnO doping and propertiesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20242 iqtibos
    ABI

  2. A study of the influence of surface layers’ disordering on the spectrum of energy losses of electrons passed through copper thin single crystal films

    З. А. Исаханов, М. К. Рузибаева, Б. Е. Умирзаков +1

    MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20112 iqtibos
    ABI

  3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos
    ABI

  4. Research of <i>p</i>‐<i>i</i>‐<i>n</i> Junctions Based on 4<i>H</i>‐SiC Fabricated by Low‐Temperature Diffusion of Boron

    I. G. Atabaev, Kh. N. Juraev

    MaqolaSilicon Carbide Semiconductor TechnologiesAdvances in Materials Science and Engineering20182 iqtibos
    ABI

  5. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET

    A.E. Atamuratov, B.O. Jabbarova, M. M. Khalilloev +3

    MaqolaSemiconductor materials and devicesNanosystems Physics Chemistry Mathematics20222 iqtibos
    ABI

  6. Subthreshold irradiation effects in silicon epitaxial films

    M. A. Zaikovskaya, Arnold Kiv, O. R. Niyazova

    MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19702 iqtibos
    ABI

  7. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

    A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 iqtibos
    ABI

  8. Contribution to the Physical Modelling of Single Charged Defects Causing the Random Telegraph Noise in Junctionless FinFET

    A. É. Atamuratov, M. M. Khalilloev, Ahmed Yusupov +3

    MaqolaSemiconductor materials and devicesApplied Sciences20202 iqtibos
    ABI

  9. Study of ion scattering and dechanneling from surface defect structure by computer simulation

    A.A. Dzhurakhalov, B.S. Kalandarov, Munis Kurbonov +2

    MaqolaIon-surface interactions and analysisComputational Materials Science20022 iqtibos
    ABI

  10. Tight‐binding molecular dynamics simulation of SiH bond dissociation in silicon clusters

    Z. M. Khakimov, F. T. Umarova, N. T. Sulaymonov +2

    MaqolaSilicon Nanostructures and PhotoluminescenceInternational Journal of Quantum Chemistry20032 iqtibos
    ABI

  11. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    MaqolaSemiconductor materials and devicesDoklady Physics20102 iqtibos
    ABI

  12. Investigation of the silicon ion density during molecular beam epitaxy growth

    G. Eifler, E. Kasper, Х. Б. Ашуров +1

    MaqolaSemiconductor materials and devicesJournal of Vacuum Science & Technology A Vacuum Surfaces and Films20021 iqtibos
    ABI

  13. Calculation of resonance frequencies of electrons present in the contact area of two semiconductors

    Sh. K. Kaniyazov, K. A. Ismaylov, Abat Muratov

    MaqolaSemiconductor materials and interfacesRadioelectronics and Communications Systems20111 iqtibos
    ABI

  14. The Influence of a Single Charged Interface Trap on the Subthreshold Drain Current in FinFETs with Different Fin Shapes

    A.E. Abdikarimov

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignTechnical Physics Letters20201 iqtibos
    ABI

  15. Influence of the Gate Oxide and Back Oxide Material Types on Self-heating Effect in Junctionless FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +2

    MaqolaSemiconductor materials and devices20241 iqtibos
    ABI

  16. Features of paramagnetism of a two-dimensional electron gas depending on concentration and temperature

    P. J. Baymatov, B. T. Abdulazizov, O. M. Yunusov +2

    MaqolaQuantum and electron transport phenomenaJournal of Computational Electronics20241 iqtibos
    ABI

  17. ZrO2 magnetron growth method and investigation of thin film growth

    Б.Д. Игамов, A.I. Kamardin, Y. S. Ergashov +1

    MaqolaSemiconductor materials and devicesAIP conference proceedings20241 iqtibos
    ABI

  18. Progress in aluminum-ion battery technology: innovations in cathode materials, electrolyte chemistry, and performance enhancement

    I. Ashurov, M. M. Adilov, Sh. Ch. Iskandarov +2

    MaqolaSemiconductor materials and devices«Узбекский физический журнал»20241 iqtibos
    ABI

  19. Oxygen-enriched silicon carbide nanocrystals for efficient overall water splitting: Unveiling effect of doping and electrolyte pH

    Sara Adnan Mahmood, Belal Salah, Khouloud Jlassi +6

    MaqolaCopper-based nanomaterials and applicationsCatalysis Today20251 iqtibos
    ABI

  20. Selective synthesis of β-TaON: The critical influence of oxygen partial pressure in ammonolysis

    Mirabbos Hojamberdiev, Ronald Vargas, Lorean Madriz +7

    MaqolaInorganic Chemistry and MaterialsDalton Transactions20251 iqtibos
    ABI

  21. A DFT study of Alkaline-earth-metal-doped Hf1 − xAxO2(A = Be, Mg, Ca) for photovolataic applications

    Abrar Nazir, Ali B.M. Ali, Ejaz Ahmad Khera +7

    MaqolaElectronic and Structural Properties of OxidesJournal of Electroceramics20251 iqtibos
    ABI

  22. A Comprehensive Study of the Impact of the Gate Oxide Material Composition on the Self-Heating Effect in Nanosheet Field Effect Transistor

    A. É. Atamuratov, D. R. Rajapov, M. M. Khalilloev +3

    MaqolaAdvancements in Semiconductor Devices and Circuit DesignSilicon20251 iqtibos
    ABI

  23. Temperature Dependence of the Occupancy of Landau Subbands in a Two-Dimensional Electron Gas

    B. T. Abdulazizov, P. J. Baymatov, A. A. Saydaliev +2

    MaqolaQuantum and electron transport phenomenaActa Physica Polonica A20251 iqtibos
    ABI

  24. Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

    M. Yu. Tashmetov, Khabibulla Djangabaev

    MaqolaSemiconductor Quantum Structures and DevicesPhysica Scripta20251 iqtibos
    ABI

  25. The microstructure and mechanical properties of (TiAlSiY)N nanostructured coatings

    Kateryna Smyrnova, О. В. Бондар, Svitlana Borba-Pogrebnjak +4

    MaqolaMetal and Thin Film Mechanics20171 iqtibos
    ABI