Silicon and Solar Cell Technologies

568 works

Thermophysical spectroscopy of the defective states in silicon
Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev
ArticleSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics19891 citations
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Effect of heat treatment on the properties of erbium-doped silicon
С. И. Власов, D. É. Nazyrov, A. A. Iminov +1
ArticleSemiconductor materials and interfacesTechnical Physics Letters20001 citations
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Comparative study of photocells based on silicon doped with nickel by various methods
К. А. Исмайлов, Н. Ф. Зикриллаев, S. Koveshnikov +1
ArticleSilicon and Solar Cell TechnologiesФизика и техника полупроводников20221 citations
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Control of the profile of the impurity distribution in epitaxial layers grown from a solution-melt with regulated volume and composition
A. V. Karimov, D. M. Yodgorova, O. A. Abdulkhaev
ArticleSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics20111 citations
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On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum
A. Yu. Leĭderman
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19851 citations
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Positron probing of phosphorus-vacancy complexes in silicon irradiated with 15 MeV protons
N.Yu. Arutyunov, V. V. Emtsev, R. Krause‐Rehberg +4
ArticleMuon and positron interactions and applicationsJournal of Physics Conference Series20151 citations
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Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons
M. Kаrimov, Sh. Makhkamov, Sh. A. Makhmudov +6
ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20101 citations
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INFLUENCE OF IMPURITY NI AND CU ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF SI
N. A. Turgunov, E.Kh. Berkinov, R.M. Turmanova
ArticleSilicon and Solar Cell TechnologiesAmerican Journal Of Applied Science And Technology20231 citations
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Influence of deep impurity levels on double injection in semiconductors
P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman, F. Ya. Rabinovich
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19721 citations
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Minority-Carrier Generation at the Interface between Silicon and Lead Borosilicate Glass
П. Б. Парчинский, С. И. Власов
ArticleSemiconductor materials and interfacesRussian Microelectronics20011 citations
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Superlinearity of photocurrent in polycrystalline Si p - n structures
B. M. Abdurakhmanov, Р. Алиев, R. Bilyalov
ArticleSilicon Nanostructures and PhotoluminescenceSemiconductor Science and Technology19961 citations
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Computer simulation of generation-recombination currents in amorphous silicon p-n diode structures
S. A. Azimov, P. M. Karageofgy-Alkalaev, A. Yu. Leĭderman +1
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19841 citations
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Influence of structure defects on the radiation enhanced gold diffusion in silicon
A. I. Koifman, N. Narkulov, Marat S. Yunusov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19751 citations
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The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors
D. A. Aronov, B. R. Mamatkulov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19861 citations
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The Influence of Exclusion on Light Absorption by Free Carriers in “Pure” (almost Intrinsic) Semiconductors with Non-Injecting Contacts
D. A. Aronov, V. V. Rubinov
ArticleSilicon Nanostructures and Photoluminescencephysica status solidi (a)19821 citations
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Transient Processes in Semiconductor Diodes and Fundamentals of Recombination Theory
Yurii R. Nosov
ChapterSilicon and Solar Cell Technologies19690 citations
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Differential Resistance and Diffusion Capacitance of Junctions in p-n-n+ Structures at high Injection Levels
D. A. Aronov, Ya. P. Kotov
ChapterSilicon and Solar Cell Technologies19710 citations
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Radiation-enhanced diffusion - defect production ratio in γ-irradiated silicon detectors
M. M. Zhits, O. A. Klimkova, O. R. Niyazova +1
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19720 citations
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Similarities of the ionization effects and annealing in <i>P</i>-type and converted <i>N</i>-type Ge irradiated with electrons at 85°K
A. Kraitchinskii, H. Rzewuski, J. Suski +1
ArticleIon-surface interactions and analysisRadiation Effects19720 citations
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On the theory of transient process after reversal of a p–i–n diode current from forward to reveres direction (II)
D. A. Aronov, R. Mamatkulov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19730 citations
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The influence of carrier capture in deep traps on the small-signal characteristics of double-injection currents in semiconductors
D. A. Aronov, E. P. Kotov, Ya. P. Kotov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19750 citations
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Influence of X-irradiation on silicon Schottky diodes
U.A. Shakirov, Marat S. Yunusov
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19760 citations
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The low-temperature doping of silicon by radiation-induced diffusion
A. I. Koifman, A. N. Narkulov, Б. Л. Оксенгендлер +1
ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19760 citations
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Parameters of silicon microdiodes fabricated by selective epitaxy
M. V. Drozdova, В. Л. Суханов, V.V. Tuchkevich +2
ArticleSilicon and Solar Cell TechnologiesThin Solid Films19760 citations
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Investigation of photoelectric and recombination characteristics of a CdHgTe optical mixer
Yu. V. Lilenko
ArticleAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal19800 citations
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