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Semiconductor materials and interfaces

771 works

  1. Carrier Removal in Electron Irradiated 4H and 6H SiC

    M. Mikelsen, Ulrike Großner, J. H. Bleka +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20080 citations
    ABI

  2. Magnetic phase separation in europium hexaboride and its relation to the Kondo interaction

    T. S. Altshuler, Yu. V. Goryunov, A. V. Dukhnenko +1

    ArticleRare-earth and actinide compoundsJournal of Experimental and Theoretical Physics Letters20080 citations
    ABI

  3. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

    I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

    ArticleSemiconductor materials and interfacesTechnical Physics Letters20080 citations
    ABI

  4. Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    ArticleSilicon Nanostructures and PhotoluminescenceInorganic Materials20080 citations
    ABI

  5. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

    N. A. Matchanov

    ArticleSemiconductor materials and interfacesTechnical Physics20080 citations
    ABI

  6. Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

    ArticleSemiconductor materials and interfacesInorganic Materials20080 citations
    ABI

  7. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20080 citations
    ABI

  8. Growth and spectral sensitivity of pSi-n(Si2)1−x (ZnSe) x structures

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +2

    ArticleSemiconductor materials and interfacesApplied Solar Energy20080 citations
    ABI

  9. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20080 citations
    ABI

  10. Application of ion implantation for obtaining the nanofilms of metal silicides

    Б. Е. Умирзаков, Д. А. Ташмухамедова, B.A. Kadyrov

    ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20080 citations
    ABI

  11. Overgrowth of the Mn4Si7 phase on/around the hexagonal SiC and cubic MnSi impurity phases in the Mn4Si7/Si films

    Andrey Orekhov, T. S. Kamilov, Elena I. Suvorova

    ChapterSemiconductor materials and interfaces20080 citations
    ABI

  12. Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

    G. Bertuccio, S. Caccia, F. Nava +7

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
    ABI

  13. Preparation of High Permittivity GdScO<sub>3</sub> Films by Liquid Injection MOCVD

    K. Hušeková, M. Jurkovič, K. Čičo +5

    ArticleSemiconductor materials and devicesECS Transactions20090 citations
    ABI

  14. Silicon Cluster Aggregation in Silica Layers

    Hans Joachim Fitting, Lena F. Kourkoutis, Roushdey Salh +4

    ArticleSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 citations
    ABI

  15. 4H-SiC Nuclear Radiation p-n Detectors for Operation up to Temperature 375 °C

    Alexander M. Ivanov, Evgenia V. Kalinina, N. B. Strokan +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
    ABI

  16. Determination of the mechanisms of photovoltage generation in semiconductor films from spectral dependences of the absorption coefficient and photovoltage

    G. A. Nabiyev

    ArticleThermography and Photoacoustic TechniquesSemiconductors20090 citations
    ABI

  17. Far-Action Radiation Defects and Gettering Effects in 4H-SiC Implanted with Al Ions

    Evgenia V. Kalinina, M. V. Zamoryanskaya, E. Kolesnikova +1

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
    ABI

  18. Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

    D.B. Shustov, E. Kolesnikova, Evgenia V. Kalinina +2

    ArticleSilicon Carbide Semiconductor TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20090 citations
    ABI

  19. Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

    A. B. Kamalov

    ArticleSemiconductor materials and interfacesRadioelectronics and Communications Systems20090 citations
    ABI

  20. Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

    A. B. Kamalov

    ArticleSemiconductor materials and interfacesRadioelectronics and Communications Systems20090 citations
    ABI

  21. Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]

    К. Адамбаев

    ArticleSemiconductor materials and interfacesApplied Solar Energy20090 citations
    ABI

  22. Features of thermal properties of strongly compensated Si&lt;B,Mn&gt;

    М. К. Бахадырханов, S. A. Valiev, S. S. Nasriddinov +1

    ArticleAluminum Alloys Composites PropertiesInorganic Materials20090 citations
    ABI

  23. Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

    A.Sh. Davletova, Smagul Karazhanov

    ArticleSemiconductor materials and interfacesInorganic Materials20090 citations
    ABI

  24. Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

    Donatella Puglisi, Gaetano Foti, G. Bertuccio

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20090 citations
    ABI

  25. Influence of gamma radiation on spectral photosensitivity of (Si2)1 − x (ZnSe) x solid solution

    Sh. N. Usmonov, А. С. Саидов, М. С. Саидов +1

    ArticleInsect and Pesticide ResearchApplied Solar Energy20090 citations
    ABI