Semiconductor materials and interfaces

771 works

Stabilization of hollow spherical silicon nanostructures predicted by non-conventional tight binding method
Polina Tereshchuk, F. T. Umarova, A. P. Mukhtarov +3
ArticleNanowire Synthesis and Applications20090 citations
ABI
Preparation of High Permittivity GdScO<sub>3</sub> Films by Liquid Injection MOCVD
K. Hušeková, M. Jurkovič, K. Čičo +5
ArticleSemiconductor materials and devicesECS Meeting Abstracts20090 citations
ABI
Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers
I. G. Atabaev, N. A. Matchanov, M. U. Hajiev +2
ArticleSemiconductor materials and devicesSemiconductors20100 citations
ABI
Effect of surface chemical treatments on Ti-p-Si1 − x Gex and Ni-p-Si1 − x Ge x contact properties
I. G. Atabaev, M. U. Hajiev, N. A. Matchanov +2
ArticleSemiconductor materials and interfacesSemiconductors20100 citations
ABI
On energy levels and heat generation of electron—hole pairs in Ge alloyed with CuInSe2 and Al2Te3
М. С. Саидов
ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20100 citations
ABI
The γ radiation effect on silicon properties with nanoclusters of manganese atoms
K.A. Ismaylov, Х. М. Илиев, Z.M. Saparniyazova +2
ArticleCrystallography and Radiation Phenomena20100 citations
ABI
Determination of the surface state density on the semiconductor-dielectric interface in the structures Al-SiO 2 -Si and Al-SiO 2 -n-Si at low temperature
G. Gulyamov, И. Н. Каримов, N. Yu. Sharibaev +1
ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 citations
ABI
About energy level and heat generation of electron-hole pair in Ge, doped by CuInSe 2 and Al 2 Te 3
М. С. Саидов
ArticleChalcogenide Semiconductor Thin FilmsGeliotekhnika20100 citations
ABI
Research of the real structure of the diode with barrier Schottky Al-pCdTe
Ш. А. Мирсагатов, S. A. Muzafarova, Baiev +1
ArticleAdvanced Semiconductor Detectors and MaterialsUzbekiston Fizika Zhurnali20100 citations
ABI
Development the obtaining technology of highest manganese silicide films for thermoelectric microelectric devices
B. Z. Sharipov, Д. М. Шукурова, M.E. Azimov +3
ArticleSemiconductor materials and interfaces20100 citations
ABI
Study of peculiarities of heat generation at the Mn 4 Si 7 -Si heterostructure interface
D.M. Shukurova, T. S. Kamilov, B. Z. Sharipov +2
ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20100 citations
ABI
Antireflection fianite and ZrO2 coatings for solar cells
A. N. Buzynin, Yu. N. Buzynin, В. В. Осико +5
ArticleSilicon and Solar Cell TechnologiesBulletin of the Russian Academy of Sciences Physics20110 citations
ABI
Formation of nanoclusters of gadolinium atoms in silicon
Х. М. Илиев, Z.M. Saparniyazova, К. А. Исмайлов +1
ArticleSilicon Nanostructures and PhotoluminescenceSurface Engineering and Applied Electrochemistry20110 citations
ABI
Thermovoltaic properties of microgranular silicon
B. M. Abdurahmanov, M. M. Adilov, M. Ashurov +2
ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20110 citations
ABI
A SHF-SEM method of induced current
A. N. Buzynin, A. E. Lük’yanov, F. A. Luk’yanov +1
ArticleAdvanced Energy Technologies and Civil Engineering InnovationsBulletin of the Russian Academy of Sciences Physics20110 citations
ABI
The effect of fast neutrons on the electrophysical properties of nuclear-doped p-silicon
M. Kаrimov, Sh. Makhkamov, N.A. Tursunov +2
ArticleAdvanced Materials and Semiconductor TechnologiesRussian Physics Journal20110 citations
ABI
The binary clusters of impurity atoms in the silicon
Н. Ф. Зикриллаев, K. S. Ayupov, O.Eh. Satarov +3
ArticleSemiconductor materials and interfaces20110 citations
ABI
The mechanism of photocurrent saturation and appearance of negative differential photoconductivity in heterostructures Mn 4 Si 7 -Si 4 Si 7 and Mn 4 Si 7 -Si<Mn≥-M
T. S. Kamilov, B. Z. Sharipov, V. V. Klechkovskaya +1
ArticleSemiconductor materials and interfacesUzbekiston Fizika Zhurnali20110 citations
ABI
Ba0.98Bi0.02（Ti0.9Zr0.1）1-xCuxO3陶瓷的介电弛豫特征
王久石, 丁士华, 宋天秀 +2
ArticleSemiconductor materials and interfaces硅酸盐学报20110 citations
ABI
Output parameters for thermoelectric modules based on metal/Last(T) hot side contacts. Part II
N. A. Matchanov, Muhammad Farhan, Jonathan D’Angelo +5
ArticleAdvanced Thermoelectric Materials and DevicesApplied Solar Energy20120 citations
ABI
Investigation of the photoelectric characteristics of photodiode structures with silicon-based potential barriers
O. A. Abdulkhaev, G. O. Asanova, D. M. Yodgorova +1
ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20120 citations
ABI
Features of producing an ohmic contact to frontal surfaces of photoconversion structures
A. V. Karimov, D. M. Edgorova, A. Z. Rakhmatov +1
ArticleSemiconductor Quantum Structures and DevicesApplied Solar Energy20120 citations
ABI
Quasi-One-Dimensional Silicon Clusters as Elements of Novel Nanowires
F. T. Umarova, Polina Tereshchuk, A. B. Normurodov
ChapterNanowire Synthesis and ApplicationsNATO science for peace and security series. B, Physics and biophysics20120 citations
ABI
Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
Anatoly M. Strel’chuk, Evgenia V. Kalinina, A. А. Lebedev
ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20130 citations
ABI
Cascade Injection Photodetector for the 500−650-nm Spectral Range on the Basis of Solid Solutions of A2B6 Compounds
Ш. А. Мирсагатов, B. N. Zaveryukhin, O. K. Ataboev +1
ArticleSemiconductor materials and interfacesUkrainian Journal of Physics20130 citations
ABI