Surface and Thin Film Phenomena

Работ: 232

Scattering of holes by the GaAs/AlAs (111) and (110) interfaces
G. F. Karavaev, В. Н. Чернышов
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2006Цитирований: 0
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A method for determining the thermal EMF and thermal conductivity
D. M. Edgorova, S. S. Dzhakhanov, A. V. Karimov +1
СтатьяElectric Power Systems and ControlInstruments and Experimental Techniques2006Цитирований: 0
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Experimental evidence of percolation phase transition in surface plasmons generation
Masson, Jean-Baptiste, Gallot, Guilhem
ПрепринтSurface and Thin Film PhenomenaarXiv (Cornell University)2006Цитирований: 0
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Obtaining films of CoSi2/Si (100) and the analysis of their morphology and stoichiometry through molecular-beam, solid-phase and reactive epitaxy methods
Б. Э. Эгамбердиев, B. Ch. Holliev, A. S. Mallaev +2
СтатьяSemiconductor materials and interfacesSurface Engineering and Applied Electrochemistry2007Цитирований: 0
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Quantum Monte Carlo simulation of superconducting state of strongly correlated systems
D.R. Djuraev, Z.M. Kenjaev
СтатьяPhysics of Superconductivity and Magnetism2007Цитирований: 0
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Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region
A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1
СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0
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Features of current carriers that cause thermo-photo conductivity in manganese silicide[H1]
К. Адамбаев
СтатьяSemiconductor materials and interfacesApplied Solar Energy2009Цитирований: 0
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To study the interface semiconductor-dielectrics centres effect on the state density
B. Kh. Qochqorov, M. Ehrgasheva, Н. Р. Рахимов +1
СтатьяSurface and Thin Film Phenomena2010Цитирований: 0
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To definition of surface state density of semiconductor-dielectric interface
B.Kh. Kuchkarov, Fayzulla A. Saparov
СтатьяSurface and Thin Film Phenomena2010Цитирований: 0
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The multicharged cluster electronic structure of manganese atoms in silicon
М. К. Бахадырханов, С. Б. Исамов, Н. Ф. Зикриллаев +1
СтатьяElectron and X-Ray Spectroscopy Techniques2011Цитирований: 0
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Estimation of the sizes of disordered surface regions of Cu and Ag thin films using the ion transmission method
З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +2
СтатьяCopper Interconnects and ReliabilityJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2013Цитирований: 0
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Photovoltatic Effect in Au–nSi–Au Structures with Schottky Barriers and Features of Spectral Characteristics
A. V. Karimov, D. M. Yodgorova, F. A. Giyasova +2
СтатьяSemiconductor materials and interfacesApplied Solar Energy2018Цитирований: 0
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DIAGONAL AND NONDIAGONAL MATRIX ELEMENTS OF THE EFFECTIVE HAMILTONIAN OF ELECTRONS IN A SEMICONDUCTOR (TAKING INTO ACCOUNT SPIN-ORBIT INTERACTION)
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Akhmedov Bahodir Bahromovich +1
СтатьяSurface and Thin Film PhenomenaEPRA International Journal of Multidisciplinary Research (IJMR)2020Цитирований: 0
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Time delay in slow electron elastic scattering by potentials with arising levels
M. Ya. Amusia, A. S. Baltenkov
СтатьяQuantum and electron transport phenomenaJournal of Physics Conference Series2020Цитирований: 0
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Sub-barrier and Above-barrier Electron Transport Through Multilayer Semiconductors
Voxob Rustamovich Rasulov, Rustam Yavkachovich Rasulov, Iqboljon Mamirjonovich Eshboltayev +1
СтатьяQuantum and electron transport phenomenaAmerican Journal of Physics and Applications2020Цитирований: 0
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Temperature Dependence of Urbach Energy in Non-Crystalline Semiconductors
Rustam Ikramov, М. А. Нуриддинова, Khurshidbek A. Muminov +1
СтатьяSurface and Thin Film PhenomenaOptics and Photonics Journal2020Цитирований: 0
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Partial time delays in elastic electron scattering by rectangular potential well with arising discrete levels
M. Ya. Amusia, A. S. Baltenkov, Igor Woiciechowski
СтатьяQuantum and electron transport phenomenaAPS Division of Atomic, Molecular and Optical Physics Meeting Abstracts2020Цитирований: 0
ABI
Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction
Komiljon Yakubov, Mutabar Latipova, Alibek Qodirov
СтатьяSemiconductor materials and interfacesBulletin of Science and Practice2021Цитирований: 0
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Computer simulation of scattering Xe+ ions from InP(001)❬110❭ surface at grazing incidence
Hidoyat Egamberganovich Abdikarimov, Elyor Baxtiyorovich Rajabov, Gulyor Shavkatovna Turayeva
СтатьяIon-surface interactions and analysisDOAJ (DOAJ: Directory of Open Access Journals)2021Цитирований: 0
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Auger Recombination in Semiconductors
М. Н. Аликулов
СтатьяSurface and Thin Film Phenomena2021Цитирований: 0
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Study of Electrical and Photoelectric Phenomena in Structures Based on Manganese Silicon Contact with Manganese High Silicon Membrane
Akhmadjon Jurayevich Khusanov
СтатьяSemiconductor materials and interfaces2021Цитирований: 0
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Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques
Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev
ГлаваSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)2021Цитирований: 0
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Investigation of stepped InP(001)<110> surface by the method of low energy ion scattering
М. K. Kаrimov, Uchkun Kutliev, M. U. Otabaev +1
СтатьяIon-surface interactions and analysisJournal of Physics Conference Series2022Цитирований: 0
ABI
Structure of Aluminum Films for the Creation of Tunnel Junctions
М. В. Стрелков, A. M. Chekushkin, A. A. Lomov +3
СтатьяSurface and Thin Film PhenomenaJournal of Communications Technology and Electronics2023Цитирований: 0
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Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer
Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov
СтатьяSurface and Thin Film PhenomenaThe European Physical Journal B2024Цитирований: 0
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