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Работы, на которые ссылается эта работа

Работ: 18

Работа: Capacitive Spectroscopy of Deep Levels in Silicon with Samarium Impurity

  1. Effect of the Diffusion of Copper Atoms in Polycrystalline CdTe Films Doped with Pb Atoms

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, S. A. Muzafarova +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2023Цитирований: 12
    ABI

  2. Defect-formation processes in silicon doped with manganese and germanium

    K. P. Abdurakhmanov, Sharifa B. Utamuradova, Kh.S. Daliev +2

    Статья1998Цитирований: 10
    ABI

  3. Features of the behavior of lanthanum and hafnium atoms in silicon

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, E. K. Kalandarov +1

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2006Цитирований: 9
    ABI

  4. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

    D. V. Lang

    Статья1974Цитирований: 9
    ABI

  5. Investigation of Defect Formation in Silicon Doped with Silver and Gadolinium Impurities by Raman Scattering Spectroscopy

    Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Elmira M. Naurzalieva +1

    СтатьяSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics2023Цитирований: 8
    ABI

  6. Characteristics of X-ray and gamma radiation detectors based on polycrystalline CdTe and CdZnTe films

    Sharifa B. Utamuradova, S. A. Muzafarova, A. M. Abdugafurov +3

    СтатьяAdvanced Semiconductor Detectors and MaterialsApplied Physics2021Цитирований: 8
    ABI

  7. Thermally Induced Deep Centers in Silicon Doped with Europium or Lanthanum

    Kh.S. Daliev, Sharifa B. Utamuradova, I. Kh. Khamidzhonov +3

    СтатьяSilicon Nanostructures and PhotoluminescenceInorganic Materials2001Цитирований: 8
    ABI

  8. The Effect of Thermal Annealing on the Electrophysical Properties of Samples n-Si<Ni,Сu>

    N. A. Turgunov, Elmurod Kh. Berkinov, R.M. Turmanova

    СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2023Цитирований: 8
    ABI

  9. Calculation of the Total Current Generated in a Tunnel Diode Under the Action of Microwave and Magnetic Fields

    G. Gulyamov, Sharifa B. Utamuradova, Mukhamadjon G. Dadamirzaev +5

    СтатьяSemiconductor Quantum Structures and DevicesEast European Journal of Physics2023Цитирований: 5
    ABI

  10. Silicon clusters doped with an yttrium metal atom impurity

    Chuanyun Xiao, Jessica Blundell, Frank Hagelberg +1

    Статья2003Цитирований: 4
    ABI

  11. The Influence of the Impurities with Deep Levels on the Iron Behavior in Silicon

    С. З. Зайнабидинов, Kh.S. Daliev, K. P. Abdurakhmanov +3

    СтатьяSilicon and Solar Cell TechnologiesModern Physics Letters B1997Цитирований: 4
    ABI

  12. Comparison of Infrared and Activation Analysis Results in Determining the Oxygen and Carbon Content in Silicon

    C. Gross, Gianni Gaetano, T. N. Tucker +1

    Статья1972Цитирований: 2
    ABI

  13. Electrical properties of silicon layers implanted with erbium and oxygen ions in a wide dose range and thermally treated in different temperature conditions

    О. В. Александров, A. O. Zakhar’in, Н. А. Соболев +1

    Статья2002Цитирований: 2
    ABI

  14. Thermophysical spectroscopy of the defective states in silicon

    Kh. T. Igamberdyev, A. T. Mamadalimov, P. K. Khabibullaev

    СтатьяSilicon and Solar Cell TechnologiesJournal of Engineering Physics and Thermophysics1989Цитирований: 1
    ABI

  15. Без названия

    ДругоеЦитирований: 1
    ABI

  16. Effect of heat treatment on the properties of erbium-doped silicon

    С. И. Власов, D. É. Nazyrov, A. A. Iminov +1

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2000Цитирований: 1
    ABI

  17. Без названия

    ДругоеЦитирований: 1
    ABI

  18. Без названия

    ДругоеЦитирований: 1
    ABI