Работы, цитирующие эту работу

Работ: 14

Работа: Optimization of The Influence of Temperature on The Electrical Distribution of Structures with Radial p-n Junction Structures

Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 10
ABI
Theoretical analysis of incomplete ionization on the electrical behavior of radial p-n junction structures
Jo`shqin Abdullayev, I. B. Sapaev, Kh. N. Juraev
СтатьяSemiconductor Quantum Structures and DevicesLow Temperature Physics2025Цитирований: 9
ABI
Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
ABI
Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions
Jo`shqin Abdullayev
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 7
ABI
Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration
Jo`shqin Abdullayev, I. B. Sapaev, N.Sh. Esanmuradova +2
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
ABI
The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEast European Journal of Physics2025Цитирований: 5
ABI
Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature
Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 3
ABI
Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects
Jo`shqin Abdullayev, I. B. Sapaev, Jonibek Sh. Abdullayev +3
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2025Цитирований: 2
ABI
Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov
СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2
ABI
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3
СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
ABI
Temperature Response Curve of Silicon Diode Temperature Sensors
Damir Istamov, O. A. Abdulkhaev, Shukurullo M. Kuliyev +3
СтатьяAdvanced MEMS and NEMS TechnologiesEast European Journal of Physics2025Цитирований: 0
ABI
Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation
J. Sh. Abdullayev, D. A. Qalandarova, M. Sh. Ibragimova +2
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
ABI
Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions
Jo`shqin Abdullayev, Jonibek Shakirovich Abdullayev, Ibrokhim Bayramdurdiyevich Sapaev +3
СтатьяSemiconductor materials and interfacesJournal of Electronic Materials2026Цитирований: 0
ABI
Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs
J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova
СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
ABI

Работы, цитирующие эту работу

Factors Influencing the Ideality Factor of Semiconductor p-n and p-i-n Junction Structures at Cryogenic Temperatures

Theoretical analysis of incomplete ionization on the electrical behavior of radial <i>p-n</i> junction structures

Analytic Analysis of the Features of GaAs/Si Radial Heterojunctions: Influence of Temperature and Concentration

Influence of Linear Doping Profiles on the Electrophysical Features of p-n Junctions

Mathematical Analysis of the Features of Radial p-n Junction: Influence of Temperature and Concentration

The Role of Recombination Types in Efficiency Limits of Radial p n junctions based on Si and GaAs

Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

Mathematical Modeling of Incomplete Ionization in Radial p-Si/n-GaAs Heterojunctions: Temperature and Doping Effects

Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

Temperature Response Curve of Silicon Diode Temperature Sensors

Experimental and Simulation-Based Investigation of p-Si/n-CdS Heterojunctions: From Cryogenic Freeze-Out to Room Temperature Operation

Composition-Driven Band Engineering and Temperature Effects in pSi/nCdmZn1−mS Heterojunctions

Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs