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Работы, цитирующие эту работу

Работ: 14

Работа: The Physics of Semiconductor Devices

  1. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  2. The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

    R. R. Kabulov, M. A. Makhmudov, O. K. Ataboev +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2016Цитирований: 7
    ABI

  3. Impurity thermovoltaic effect in the grain boundaries of a polycrystalline silicon solar cell

    М. С. Саидов, B. M. Abdurakhmanov, L. O. Olimov

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 5
    ABI

  4. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    СтатьяSemiconductor materials and devicesDoklady Physics2007Цитирований: 4
    ABI

  5. Effect of irradiation with gamma-ray photons on the charge-transport mechanism in n-CdS/p-CdTe heterostructures

    S. A. Muzafarova, Ш. А. Мирсагатов, F. N. Dzhamalov

    СтатьяAdvanced Semiconductor Detectors and MaterialsSemiconductors2009Цитирований: 3
    ABI

  6. Influence of the conductivity type of silicon on the process of radiation degradation of solar cells

    Sh. Makhkamov, Р. А. Муминов, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2013Цитирований: 2
    ABI

  7. Influence of Isotropic Pressure on the Current–Voltage Characteristics of Surface-Barrier Diodes Sb–p-Si〈Mn〉–Au

    С. З. Зайнабидинов, I. G. Tursunov, О. Химматкулов

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 2
    ABI

  8. Deep diffusion doping of macroporous silicon

    E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters1999Цитирований: 0
    ABI

  9. Radiation-stimulated processes in CdTe solar cells

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2003Цитирований: 0
    ABI

  10. Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

    A. B. Kamalov

    СтатьяSemiconductor materials and interfacesRadioelectronics and Communications Systems2009Цитирований: 0
    ABI

  11. Electrophysical and optical properties of silicon produced by multiple remelting of metallurgical silicon by concentrated solar beams (Review)

    А. С. Саидов, A. Yu. Leĭderman

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2015Цитирований: 0
    ABI

  12. Properties of tandem-junction heterophotoconverters with GaAs p–n junctions under exposure by bilaterally concentrated sunlight

    M. A. Abdukadyrov, A. S. Ganiev, Р. А. Муминов +1

    Статьяsolar cell performance optimizationApplied Solar Energy2016Цитирований: 0
    ABI

  13. A semiempirical efficiency test for solar cells based on AlGaAs–GaAs and Si

    Р. Алиев, M. A. Alinazarova, Р. Г. Икрамов

    Статьяsolar cell performance optimizationApplied Solar Energy2016Цитирований: 0
    ABI

  14. Diamond films obtained on silicone substrates by the CVD method and properties of structures based on them

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    СтатьяDiamond and Carbon-based Materials ResearchPhysical Sciences and Technology2023Цитирований: 0
    ABI