Работы, цитирующие эту работу

Работ: 12

Работа: Deep impurities in semiconductors

1. Clusters of nickel atoms and controlling their state in silicon lattice

   М. К. Бахадырханов

   СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductor Physics Quantum Electronics & Optoelectronics2018Цитирований: 9

   ABIABI:AkademIndex/openalex/2026.other.184735

2. The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

   Marat S. Yunusov, M. Kаrimov, M. N. Alkulov +1

   СтатьяSilicon and Solar Cell TechnologiesRadiation effects and defects in solids2000Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.279519

3. Spectra of the energy levels of multicharged nanoclusters of manganese atoms in silicon

   М. К. Бахадырханов, С. Б. Исамов

   СтатьяLaser-Ablation Synthesis of NanoparticlesSurface Engineering and Applied Electrochemistry2011Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.345486

4. Impurity photovoltaic effect in silicon with multicharge Mn clusters

   М. К. Бахадырханов, Х. М. Илиев, С. А. Тачилин +2

   СтатьяSemiconductor materials and interfacesApplied Solar Energy2008Цитирований: 2

   ABIABI:AkademIndex/openalex/2008.article.000109

5. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1995Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.408791

6. Properties of precisely compensated semiconductors

   Smagul Karazhanov

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000034

7. Electrical properties of semiconductors with pair defects

   Smagul Karazhanov, É. V. Kanaki

   СтатьяSilicon and Solar Cell TechnologiesSemiconductors2000Цитирований: 1

   ABIABI:AkademIndex/openalex/2000.article.000183

8. Infralow-frequency oscillations in photoconductivity of chromium-doped silicon

   Kh. Kh. Dzhuliev, A. Yu. Leĭderman, A. T. Mamadalimov

   СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.441308

9. The Field and Spectrum Dependences of Impurity Photoconductivity with Exclusion in Compensated Semiconductors

   D. A. Aronov, B. R. Mamatkulov

   СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1986Цитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.658872

10. The Influence of Field-Induced Variation in Majority Carrier Lifetime Caused by Photostimulated Heating on Impurity Photoconductivity of Compensated Semiconductors with Exclusion

    D. A. Aronov, B. R. Mamatkulov

    СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1987Цитирований: 0

    ABIABI:AkademIndex/openalex/1987.article.000080

11. Charge-transfer theory in polycrystalline semiconductors with deep impurity centers

    K. M. Doshchanov

    СтатьяThin-Film Transistor TechnologiesSemiconductors1998Цитирований: 0

    ABIABI:AkademIndex/openalex/1998.article.000190

12. The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon

    M. Kаrimov, A. O. Kurbanov, С. З. Зайнабидинов +1

    СтатьяSilicon and Solar Cell TechnologiesRussian Physics Journal2006Цитирований: 0

    ABIABI:AkademIndex/openalex/2006.article.000333