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Работы, цитирующие эту работу

Работ: 14

Работа: Double-injection currents in semiconductors

  1. Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

    А. С. Саидов, Sh. N. Usmonov, M. U. Kalanov +2

    СтатьяAdvanced Surface Polishing TechniquesPhysics of the Solid State2013Цитирований: 8
    ABI

  2. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  3. Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties

    А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
    ABI

  4. Effect of injection depletion in p-n heterostructures based on solid solutions (Si2)1 − x − y (Ge2) x (GaAs) y , (Si2)1 − x (CdS) x , (InSb)1 − x (Sn2) x , and CdTe1 − x S x

    Sh. N. Usmonov, А. С. Саидов, A. Yu. Leĭderman

    СтатьяNear-Field Optical MicroscopyPhysics of the Solid State2014Цитирований: 7
    ABI

  5. Mechanism of charge transfer in n-CdS/p-CdTe heterostructures with a thick layer of the CdTe1 − x S x solid solution

    Kh. Kh. Ismoilov, A. M. Abdugafurov, Ш. А. Мирсагатов +1

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2008Цитирований: 6
    ABI

  6. Investigation of current-voltage characteristics of the n-CdS-p-CdTe structure with an extended layer of the intermediate solid solution

    Ш. А. Мирсагатов, A. Yu. Leĭderman, B. U. Aĭtbaev +1

    СтатьяSilicon and Solar Cell TechnologiesPhysics of the Solid State2009Цитирований: 5
    ABI

  7. Growth, structure, and properties of GaAs-based (GaAs)1–x–y (Ge2) x (ZnSe) y epitaxial films

    S.Z. Zaynabidinov, А. С. Саидов, A. Yu. Leĭderman +4

    СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2016Цитирований: 5
    ABI

  8. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
    ABI

  9. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    СтатьяSemiconductor materials and interfacesSemiconductors2018Цитирований: 4
    ABI

  10. Growth of Ge1 − x Sn x solid solution films and study of their structural properties and some of their photoelectric properties

    А. С. Саидов, Sh. N. Usmonov, U. P. Asatova

    СтатьяPhotonic and Optical DevicesSemiconductors2012Цитирований: 4
    ABI

  11. Photoelectric properties of an injection photodetector based on alloys of II–VI compounds

    Ш. А. Мирсагатов, O. K. Ataboev, B. N. Zaveryukhin +1

    СтатьяChalcogenide Semiconductor Thin FilmsSemiconductors2014Цитирований: 3
    ABI

  12. Composition and photoelectric properties of epitaxial silicon layers grown from a tin-based solution melt of technical silicon

    Б. Сапаев, А. С. Саидов, Sh.I. Ibragimov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  13. Без названия

    A.K. Uteniyazov, A. Yu. Leyderman, R. A. Ayukhanov +25

    ДругоеAdvanced Semiconductor Detectors and MaterialsSemiconductor Physics Quantum Electronics & Optoelectronics2020Цитирований: 0
    ABI

  14. The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

    A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2

    СтатьяIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering2021Цитирований: 0
    ABI