Skip to main content
AkademIndex

Products

For developers

AkademBaseOpen API for the ecosystem

Silicon and Solar Cell Technologies

568 works

  1. The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures

    L. O. Olimov, B. M. Abdurakhmanov

    ArticleSemiconductor materials and interfacesAdvances in Energy and Power20132 citations
    ABI

  2. Ion Implantation - Tool for Fabrication of Advanced 4H-SiC Devices

    Evgenia V. Kalinina, G. Kholuyanov, Yu. A. Goldberg +8

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20022 citations
    ABI

  3. Effective solar cells based on high-resistance monocrystalline silicon

    М. Н. Турсунов, A. Yu. Leĭderman, S. Dadamukhamedov +3

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20072 citations
    ABI

  4. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19822 citations
    ABI

  5. Exclusion effect quenching in compensated semiconductors under the action of impurity illumination generating majority current carriers

    D. A. Arunuv, P. I. Knigin, B. K. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19842 citations
    ABI

  6. Low-temperature lithium drift in silicon

    O. A. Klimkova, O. R. Niyazova

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19701 citations
    ABI

  7. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19721 citations
    ABI

  8. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

    V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi

    ArticleMuon and positron interactions and applicationsphysica status solidi (a)19821 citations
    ABI

  9. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

    S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

    ArticleSemiconductor materials and interfacesphysica status solidi (a)19821 citations
    ABI

  10. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19851 citations
    ABI

  11. Ion bombardment effect on Si homoepitaxial growth from ion molecular beams

    T.S. Pugacheva, М. С. Саидов, A. S. Lutovich

    ArticleIon-surface interactions and analysisRadiation Effects19871 citations
    ABI

  12. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 citations
    ABI

  13. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    ArticleElectromagnetic Effects on MaterialsModern Physics Letters B19981 citations
    ABI

  14. Doping of <i>n</i>-type 6H–SiC and 4H–SiC with defects created with a proton beam

    A. А. Lebedev, A. I. Veı̆nger, D. V. Davydov +3

    ArticleSilicon Carbide Semiconductor TechnologiesJournal of Applied Physics20001 citations
    ABI

  15. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  16. Silicon single crystals ion-doped with ytterbium

    D. É. Nazyrov, Semyon Goncharov, А. В. Суворов

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20001 citations
    ABI

  17. Electrical properties of semiconductors with pair defects

    Smagul Karazhanov, É. V. Kanaki

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI

  18. Tensoresistive effects in tin-doped silicon under static and dynamic pressure conditions

    О. О. Маматкаримов, Р. Х. Хамидов

    ArticleForce Microscopy Techniques and ApplicationsTechnical Physics Letters20031 citations
    ABI

  19. Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

    Evgenia V. Kalinina, G. Kholuyanov, A. А. Ситникова +6

    ArticleSilicon Carbide Semiconductor TechnologiesMaterials science forum20031 citations
    ABI

  20. High Energy Resolution Detectors Based on 4H-SiC

    Alexander M. Ivanov, Evgenia V. Kalinina, G. Kholuyanov +5

    ArticleParticle Detector Development and PerformanceMaterials science forum20051 citations
    ABI

  21. Photothermal converters with silicon solar cells

    M. Mirzabaev, A. M. Mirzabaev, V. P. Kononerov +2

    ArticlePhotovoltaic System Optimization TechniquesApplied Solar Energy20071 citations
    ABI

  22. Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

    М. С. Саидов, S. L. Lutpullaev, А. Yusupov +5

    ArticleSilicon and Solar Cell TechnologiesPhysics of the Solid State20071 citations
    ABI

  23. Dependence of the Urbach energy on the Fermi level in A-Si:H films

    S. Zajnobidinov, Р. Г. Икрамов, Nuritdinova +1

    ArticleThin-Film Transistor Technologies20081 citations
    ABI

  24. Investigation of the electrophysical properties and structures of impurity-defective complexes in silicon doped with palladium

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    ArticleSilicon Nanostructures and PhotoluminescenceRussian Physics Journal20101 citations
    ABI

  25. Growth and properties of single crystals of Si1 − x Ge x (0 &lt; x &lt; 0.35) solid solutions

    I. G. Atabaev, N. A. Matchanov, M. U. Khazhiev +1

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters20101 citations
    ABI