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Semiconductor materials and interfaces

771 works

  1. Codiffusion of Gallium and Phosphorus Atoms in Silicon

    Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

    ArticleSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 citations
    ABI

  2. Studies of Degradation Silicon Heterojunction Solar Cells by 1 MeV Electrons Irradiation

    V. S. Kalinovskiĭ, E. I. Terukov, С. Н. Аболмасов +6

    ArticleSilicon and Solar Cell TechnologiesApplied Solar Energy20232 citations
    ABI

  3. Changes in the Structure and Properties of Silicon During Ytterbium Doping: The Results of o Comprehensive Analysis

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +3

    ArticleSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20242 citations
    ABI

  4. Production and Characteristics of (ZnSe)0.1(SnSe)0.9 Films for Use in Thin Film Solar Cells

    T.M. Razykov, B. A. Ergashev, R. T. Yuldoshov +2

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20182 citations
    ABI

  5. Structural Properties of SbxSey Thin Films Obtained by CMBD for Solar Cells

    T. M. Razykov, К. M. Kuchkarov, М. С. Тиванов +8

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20222 citations
    ABI

  6. Thin silicide films: producing and properties

    А.С. Рысбаев, S. S. Nasriddinov, Yu. Yu. Yuldashev +4

    ArticleSemiconductor materials and interfaces20042 citations
    ABI

  7. Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures

    А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20102 citations
    ABI

  8. Impurity thermovoltaic effect of semiconductor structures: Specific features and outlook

    М. С. Саидов

    ArticleSemiconductor materials and interfacesApplied Solar Energy20072 citations
    ABI

  9. Is it possible to carry out impact ionization in the narrow energy gap of p-p, n-n heterojunctions and increase the efficiency of thin-film solar cells?

    М. С. Саидов

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20112 citations
    ABI

  10. Thermal Stimulation of Photocurrent in p–n Junctions

    G. Gulyamov, A. G. Gulyamov, У. И. Эркабоев

    ArticleSemiconductor materials and interfacesApplied Solar Energy20182 citations
    ABI

  11. Size Quantization in n-GaP

    Rustam Yavkachovich Rasulov, P. Ya. Rasulov, I. Éshboltaev +1

    ArticleSemiconductor Quantum Structures and DevicesSemiconductors20202 citations
    ABI

  12. The features of impurity thermal-Photovoltaic and thermal-Voltaic effect of polycrystalline Structures

    L. O. Olimov, B. M. Abdurakhmanov

    ArticleSemiconductor materials and interfacesAdvances in Energy and Power20132 citations
    ABI

  13. Tight‐binding molecular dynamics simulation of SiH bond dissociation in silicon clusters

    Z. M. Khakimov, F. T. Umarova, N. T. Sulaymonov +2

    ArticleSilicon Nanostructures and PhotoluminescenceInternational Journal of Quantum Chemistry20032 citations
    ABI

  14. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET

    A. É. Atamuratov, D. U. Matrasulov, P. K. Khabibullaev

    ArticleSemiconductor materials and devicesDoklady Physics20102 citations
    ABI

  15. Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions

    T. S. Kamilov, V. V. Klechkovskaya, B. Z. Sharipov +1

    ArticleSemiconductor materials and interfacesTechnical Physics20132 citations
    ABI

  16. The Effects of Field and Temperature Heating in Intrinsic Semiconductors with Non-Injecting Contacts

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19822 citations
    ABI

  17. Exclusion effect quenching in compensated semiconductors under the action of impurity illumination generating majority current carriers

    D. A. Arunuv, P. I. Knigin, B. K. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19842 citations
    ABI

  18. On the theory of transient process after reversal of a p–i–n diode current from forward to reverse direction (I)

    D. A. Aronov, R. Mamatkulov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19721 citations
    ABI

  19. Positron Annihilation and Electrical Properties of Electron-Irradiated (≈ 2 MeV) InAs Crystals

    V. N. Brudnyı̆, S.A. Vorobiev, A. A. Tsoi

    ArticleMuon and positron interactions and applicationsphysica status solidi (a)19821 citations
    ABI

  20. Transient Processes of Current Reversal in MIS Structures with Majority and Minority Charge Carriers

    S. A. Asimov, D. A. Aronov, D. K. Isamukhamedova +1

    ArticleSemiconductor materials and interfacesphysica status solidi (a)19821 citations
    ABI

  21. The criteria of diffusionless solution validity in the theory of exclusion in “super-pure” semiconductors

    D. A. Aronov, R. Mamatkulov, V. V. Rubinov

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19851 citations
    ABI

  22. Carrier transport in a diode base with locally nonuniform recombination properties

    А. В. Иванов, N. B. Strokan, V. B. Shuman

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19971 citations
    ABI

  23. Dynamic Strain Conductivity of Compensated Silicon

    С. З. Зайнабидинов, О. О. Маматкаримов, I. G. Tursunov +1

    ArticleElectromagnetic Effects on MaterialsModern Physics Letters B19981 citations
    ABI

  24. Influence of uniaxial compression on the photoconductivity of highly compensated Si〈B, Mn〉

    М. К. Бахадырханов, Х. М. Илиев, Kh. F. Zikrillaev

    ArticleSemiconductor materials and interfacesTechnical Physics Letters19981 citations
    ABI

  25. Properties of precisely compensated semiconductors

    Smagul Karazhanov

    ArticleSilicon and Solar Cell TechnologiesSemiconductors20001 citations
    ABI