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Semiconductor materials and interfaces

771 works

  1. Vanadium diffusion in silicon

    G.K. Azimov, S.Z. Zajnabidinov, Yu. I. Kozlov

    ArticleAdvanced Materials Characterization Techniques19890 citations
    ABI

  2. Nonlinear electrical conductivity of metal point contacts in the dirty limit

    I. O. Kulik, Michael Moskalets

    ArticleForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics19890 citations
    ABI

  3. Nonlinear conductivity of thermal contacts without phonon reabsorption

    Michael Moskalets

    ArticleForce Microscopy Techniques and ApplicationsSoviet Journal of Low Temperature Physics19890 citations
    ABI

  4. Exchange conductivity and trajectory effects during injection of charge carriers into bismuth

    Yu. A. Bogod, V. B. Krasovit︠s︡kiĭ, E. T. Lemeshevskaya +2

    ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19890 citations
    ABI

  5. Doping mechanisms of gallium arsenide with tin in gas phase epitaxy processes

    I. A. Bobrovnikova, M. D. Vilisova, L. P. Porokhovnichenko +2

    ArticleSemiconductor materials and interfacesRussian Physics Journal19900 citations
    ABI

  6. The Aharonov–Bohm effect in narrow-band semiconductors

    É. N. Bogachek

    ArticleQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics19900 citations
    ABI

  7. On resistivity correlation in Ni–Cr–Fe alloys with density of electron states

    V. I. Pecherskaya, А. В. Бутенко, A. I. Kopeliovich

    ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19900 citations
    ABI

  8. Properties of SiC on Si Substrate Films Obtained Using the Plasma-Chemical Method

    S. I. Vlaskina, Alla Krasikova, В. Е. Родионов

    ArticleSilicon Carbide Semiconductor Technologiesphysica status solidi (a)19910 citations
    ABI

  9. Photochemical Reorganization of Deep Impurity Centres in Silicon. Dissociation of Donor–Acceptor Pairs

    K. A. Adilov

    ArticleSilicon Nanostructures and Photoluminescencephysica status solidi (b)19910 citations
    ABI

  10. Electrical properties of p-type ZnGeP2 irradiated by H+ ions

    V. N. Brudnyı̆, V. A. Novikov

    ArticleSemiconductor materials and interfacesRussian Physics Journal19910 citations
    ABI

  11. Reversible recovery of excess current in Y(Ho)–Ba–Cu–O–normal metal point contacts under high voltages

    L. F. Rybal’chenko, V. V. Fisun, N. L. Bobrov +3

    ArticleSemiconductor materials and interfacesSoviet Journal of Low Temperature Physics19910 citations
    ABI

  12. Molecular-dynamics study of the effect of simple defects on B2 lattice stability

    В. В. Кулагина, M. F. Zhorovkov

    ArticleBoron and Carbon Nanomaterials ResearchRussian Physics Journal19920 citations
    ABI

  13. Ductile-brittle transition in the refractory metal silicides

    A. D. Osipov

    ArticleSemiconductor materials and interfacesPowder Metallurgy and Metal Ceramics19920 citations
    ABI

  14. Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy

    V. P. Germogenov, O. M. Ivleva, С. В. Пономарев +2

    ArticleSemiconductor Quantum Structures and DevicesRussian Physics Journal19920 citations
    ABI

  15. Role of the substrate in the formation of structure defects representing step retardation sites during vapor phase epitaxy of gallium arsenide

    И. В. Ивонин, N. N. Krivolapov, L. G. Lavrent’eva +1

    ArticleSemiconductor materials and interfacesRussian Physics Journal19920 citations
    ABI

  16. High-frequency response of metallic point contacts with small electron mean free path

    O. P. Balkashin, I. I. Kulik, Michael Moskalets

    ArticleSemiconductor materials and devicesSoviet Journal of Low Temperature Physics19920 citations
    ABI

  17. Spontaneous magnetostriction in the ordered phase of NiCI2

    A. S. Baryl’nik, A. I. Prokhvatilov, M. A. Strzhemechnyı̆ +4

    ArticleMagnetic and transport properties of perovskites and related materialsLow Temperature Physics19940 citations
    ABI

  18. Effect of alloy composition on defect formation in GexSi1−x/Si heterostructures obtained by molecular beam epitaxy

    V. I. Vdovin, M. G. Mil’vidskiĭ, T. G. Yugova +2

    ArticleSemiconductor materials and interfacesJournal of Crystal Growth19940 citations
    ABI

  19. New peculiarities in the nonlinear current-voltage characteristics of bismuth

    S. V. Bengus, Vit. B. Krasovitskiı̆

    ArticleChemical Thermodynamics and Molecular StructureLow Temperature Physics19940 citations
    ABI

  20. Effect of temperature on relaxation of energized charge carriers in a bismuth point contact

    В. В. Андриевскии, E. I. Ass, Sergey Rozhok

    ArticleCopper Interconnects and ReliabilityLow Temperature Physics19940 citations
    ABI

  21. Dependence of the amplitude of magnetoquantum oscillations of the metallic point-contact resistance on the bias voltage

    N. L. Bobrov, N. N. Gribov, Y. Kokkedee +3

    ArticleOrganic and Molecular Conductors ResearchLow Temperature Physics19950 citations
    ABI

  22. The influence of structural defects of Si on height of potential barrier Mo - Si

    T. Nazarov

    ArticleSemiconductor materials and interfaces19950 citations
    ABI

  23. Electron processes and mechanism of current transfer in multilayer semiconductor structures

    M. Dusenbaev

    ArticleSemiconductor materials and interfaces19950 citations
    ABI

  24. Tensor electric properties of n-Si monocrystals

    И. Н. Каримов, A.R. Turaev, A.A. Khlbekov +1

    ArticleSemiconductor materials and interfaces19950 citations
    ABI

  25. Silicon doped by rare earth elements - prospective material of microelectronics

    Kh.S. Daliev, S.Z. Zajnabidinov

    ArticleSemiconductor materials and interfaces19950 citations
    ABI