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Semiconductor materials and interfaces

771 works

  1. The influence of super high frequency wave on recombination currents in p-n junction

    G. Gulyamov

    ArticleSilicon and Solar Cell Technologies19950 citations
    ABI

  2. The influence of Co 60 quanta on current characteristics of rectifier columns on the base of silicon

    G. Aripov, A. É. Atamuratov, U. P. Asatova +2

    ArticleElectric Power Systems and Control19950 citations
    ABI

  3. Thermoelectric elements based on compounds of silicon and transition metals

    M. I. Fedorov, V. K. Zaĭtsev, F. Yu. Solomkin +1

    ArticleAdvanced Thermoelectric Materials and DevicesTechnical Physics Letters19970 citations
    ABI

  4. Impact of Radiation-Induced Defects on the Yellow Luminescence Band in MOCVD GaN

    V. V. Emtsev, V. Yu. Davydov, I. N. Goncharuk +7

    ArticleGaN-based semiconductor devices and materialsMaterials science forum19970 citations
    ABI

  5. Oxygen Gettering on Buried Layers at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

    R. Job, W. R. Fahrner, A. Ulyashin +3

    ArticleSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 citations
    ABI

  6. Diffusion of promethium in silicon

    D. É. Nazyrov, G. S. Kulikov, R. Sh. Malkovich

    ArticleAdvanced Materials Characterization TechniquesTechnical Physics Letters19970 citations
    ABI

  7. Defect Formation during Erbium Implantation and Subsequent Annealing of Si:Er

    Н. А. Соболев, A. M. Emel’yanov, Yu. A. Kudryavtsev +8

    ArticleSilicon and Solar Cell TechnologiesDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena19970 citations
    ABI

  8. Effect of thermal-field treatment and ionizing radiation on the energy spectrum of interfacial states at the Si-SiO2 interface of a MOS transistor

    A. É. Atamuratov, С. З. Зайнабидинов, А. Yusupov +2

    ArticleSemiconductor materials and devicesTechnical Physics19970 citations
    ABI

  9. Effect of the degree of compensation of sulfur impurity levels on the photoconductivity of silicon near 10.6 µm

    G. B. Gorlin, V. T. Tulanov, Kh. B. Siyabekov

    ArticleSemiconductor materials and interfacesTechnical Physics19970 citations
    ABI

  10. Photoconductivity of sulfur-doped silicon near 10.6 µm

    Kh. B. Siyabekov, V. T. Tulanov

    ArticleThermography and Photoacoustic TechniquesSemiconductors19970 citations
    ABI

  11. Polycrystalline silicon S-diode fabricated using phosphorus thermal diffusion along grain boundaries

    R. Aliev, B. M. Abdurakhmanov, R. Bilyalov

    ArticleSemiconductor materials and interfacesInterface Science19970 citations
    ABI

  12. The peculiarities of behaviour of gold impurities in silicon at radiation-thermal influences

    Sh. Makhkamov, N.A. Tursunov, M. Ashurov +1

    ArticleSilicon and Solar Cell Technologies19970 citations
    ABI

  13. The influence of gamma-radiation on DLTS spectra in silicon doped by selenium

    N.A. Sultanov, M. Tadzhibaev, E.T. Rakhimov

    ArticleSilicon and Solar Cell Technologies19970 citations
    ABI

  14. Photoinduced charge separation in photovoltaic cell with heterojunction of p- and n-type conjugated polymers

    M. Onoda, Kazuya Tada, Anvar Zakhidov +1

    ArticleOrganic Electronics and PhotovoltaicsThin Solid Films19980 citations
    ABI

  15. High-temperature diode formed by epitaxial GaP layers

    M. M. Sobolev, В. Г. Никитин

    ArticleSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 citations
    ABI

  16. On the mechanisms of long-term relaxation of the conductivity in compensated Si〈B,S〉 and Si〈B,Rh〉 as a result of irradiation

    Marat S. Yunusov, M. Kаrimov, Б. Л. Оксенгендлер

    ArticleSemiconductor materials and interfacesSemiconductors19980 citations
    ABI

  17. Electronic structure of crystalline FeSi and FeGe

    И. Н. Шабанова, V. I. Kormilets, L. D. Zagrebin +1

    ArticleRare-earth and actinide compoundsJournal of Structural Chemistry19980 citations
    ABI

  18. Enhanced activation of implanted dopant impurity in hydrogenated crystalline silicon

    A. N. Nazarov, V. M. Pinchuk, В. С. Лысенко +2

    ArticleSilicon and Solar Cell TechnologiesPhysical review. B, Condensed matter19980 citations
    ABI

  19. Diffusion of erbium in silicon

    С. З. Зайнабидинов, D.E. Nazirov, A. Zh. Akbarov +2

    ArticleSilicon and Solar Cell TechnologiesTechnical Physics Letters19980 citations
    ABI

  20. Coulomb interaction controlled room temperature oscillation of tunnel current in porous Si

    V. V. Afonin, V. L. Gurevich, R. Laiho +2

    ArticleSilicon Nanostructures and PhotoluminescencePhysics of the Solid State19980 citations
    ABI

  21. Direct bonding of silicon wafers with a diffusion layer

    V. B. Voronkov, E. G. Guk, В. А. Козлов +1

    Article3D IC and TSV technologiesTechnical Physics Letters19980 citations
    ABI

  22. Investigation of Influence of Thermal and Radiation Processing on Impurity Centers in Silicon and Silicon Based Structures

    M. Ashurov, Sh. Makhkamov, N.A. Tursunov +1

    ArticleSemiconductor materials and interfacesMRS Proceedings19980 citations
    ABI

  23. Deep diffusion doping of macroporous silicon

    E. V. Astrova, V. B. Voronkov, I. V. Grekhov +2

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 citations
    ABI

  24. Electrical properties of Schottky diodes using high-resistivity CdTe crystals

    V. O. Ukrainets, Г. А. Ильчук, N. A. Ukrainets +2

    ArticleAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters19990 citations
    ABI

  25. Growth of perfect-crystal Si-Si1−xGex-(Ge2)1−x(InP)x structures from the liquid phase

    А. С. Саидов, É. A. Koshchanov, A. Sh. Razzakov +1

    ArticleSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 citations
    ABI