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Работы, на которые ссылается эта работа

Работ: 22

Работа: Electrophysical and thermoelectric properties and crystal structure of the formed Mn4Si7 thin vacuum coatings

  1. Formation of n-type CoSi monosilicide film which can be used in instrumentation

    I. R. Bekpulatov, Gunel Imanova, T. S. Kamilov +2

    СтатьяSemiconductor materials and interfacesInternational Journal of Modern Physics B2022Цитирований: 22
    ABI

  2. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  3. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

    M. T. Normurodov, А.С. Рысбаев, I. R. Bekpulatov +2

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2021Цитирований: 17
    ABI

  4. Obtaining of thin films of manganese silicides on a Si surface by the method of solid-phase deposition and investigation of their electronic structure

    Б. Е. Умирзаков, Gunel Imanova, I. R. Bekpulatov +1

    СтатьяSemiconductor materials and interfacesModern Physics Letters B2023Цитирований: 17
    ABI

  5. Effect of the O+2-ion bombardment on the TiN composition and structure

    З. А. Исаханов, Б. Е. Умирзаков, М. К. Рузибаева +1

    СтатьяMetal and Thin Film MechanicsTechnical Physics2015Цитирований: 13
    ABI

  6. Effect of Deposition of Submonolayer Cs Coatings on the Density of Electronic States and Energy Band Parameters of CoSi2/Si(111)

    Б. Е. Умирзаков, I. R. Bekpulatov, I. Kh. Turapov +1

    СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2022Цитирований: 13
    ABI

  7. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions

    А.С. Рысбаев, J. B. Khujaniyozov, I. R. Bekpulatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2017Цитирований: 12
    ABI

  8. Photoelectric properties of higher manganese silicide (HMS)-SilangleMnrangle-M structures

    T. S. Kamilov, V. P. Chirva, D.K. Kabilov

    СтатьяSemiconductor materials and interfacesSemiconductor Science and Technology1999Цитирований: 11
    ABI

  9. Obtaining higher manganese silicide films with high thermoelectric properties

    I. R. Bekpulatov, D.S. Shomukhammedova, Д. М. Шукурова +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 9
    ABI

  10. Electronic and Optical Properties of GaAlAs/GaAs Thin Films

    Б. Е. Умирзаков, S. B. Donaev, N. M. Mustafaeva

    СтатьяPhotocathodes and Microchannel PlatesTechnical Physics2019Цитирований: 8
    ABI

  11. Modification of the Surface Properties of Free Si–Cu Films by Implantation of Active Metal Ions

    З. А. Исаханов, И.О. Косимов, Б. Е. Умирзаков +1

    СтатьяSemiconductor materials and interfacesTechnical Physics2020Цитирований: 8
    ABI

  12. The dependence of the parameters of energy bands on the depth of the ion-doped layer for Si implanted with ions Ba+

    S. B. Donaev, N. M. Mustafaeva, Azizakhon Maksumkhanova +1

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 4
    ABI

  13. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2020Цитирований: 4
    ABI

  14. Resistivity and the Hall effect for thin MnSi<sub>1.73</sub>films

    C. A. Krontiras, K Promoni, M. Roilos

    Статья1988Цитирований: 3
    ABI

  15. Effect of quantum-well structures on the thermoelectric figure of merit

    L. D. Hicks, M. S. Dresselhaus

    Статья1993Цитирований: 3
    ABI

  16. Effect of implantation of barium and oxygen ions on the emission properties of Mo, Pd, and Pd-Ba

    S. B. Donaev, Ki Buem Kim, Eshboy Rabbimov +2

    СтатьяIon-surface interactions and analysisAIP conference proceedings2022Цитирований: 2
    ABI

  17. Enhancement of thermoelectric properties in nanocrystalline M–Si thin film composites (M=Cr, Mn)

    S. V. Novikov, А. Т. Бурков, J. Schumann

    Статья2012Цитирований: 2
    ABI

  18. Nanocrystallization of amorphous M-Si thin film composites (M=Cr, Mn) and their thermoelectric properties

    А. Т. Бурков, S. V. Novikov, J. Schumann

    Статья2012Цитирований: 2
    ABI

  19. The dependence of the microstructure and thermoelectric properties of germanium-doped higher manganese silicide crystals

    Andrey Orekhov, V. V. Klechkovskaya, E. V. Rakova +4

    Статья2017Цитирований: 2
    ABI

  20. Без названия

    ДругоеЦитирований: 2
    ABI

  21. Без названия

    ДругоеЦитирований: 1
    ABI

  22. Без названия

    ДругоеЦитирований: 1
    ABI