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Semiconductor materials and interfaces

771 works

  1. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

    Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

    ArticleSemiconductor materials and interfacesSemiconductors20204 citations
    ABI

  2. Silicon-lithium telescopic detector in one crystal

    Р. А. Муминов, S. A. Radzhapov, А. К. Саймбетов

    ArticleSilicon Nanostructures and PhotoluminescenceAtomic Energy20094 citations
    ABI

  3. Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

    А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1

    ArticleSemiconductor materials and interfacesSemiconductors20184 citations
    ABI

  4. RESEARCH OF THE DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS OF p-Si-n-(Si2)1 - x - y(Ge2)x(ZnSe)y-STRUCTURES ON TEMPERATURE

    А. С. Саидов, K. A. Amonov, Ada Yul'evna Leyderman

    ArticleSemiconductor materials and interfacesComputational nanotechnology20194 citations
    ABI

  5. Energy band diagrams, of Cu2SZnXCd1−xS(0 ≦ x ≦ 1) heterojunctions

    T.M. Razykov, B. Kh. Kadirov

    ArticleSemiconductor materials and interfacesphysica status solidi (a)19844 citations
    ABI

  6. Electronic density of states at the interface between silicon and lead borosilicate glass

    С. И. Власов, П. Б. Парчинский, B. A. Olmatov

    ArticleSemiconductor materials and interfacesInorganic Materials20004 citations
    ABI

  7. Reactor irradiation enhanced hetero-diffusion in silicon

    A. I. Koifman, O. R. Niyazova

    ArticleSilicon and Solar Cell Technologiesphysica status solidi (a)19723 citations
    ABI

  8. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

    I. G. Atabaev

    ArticleSemiconductor materials and interfacesComputational Materials Science20013 citations
    ABI

  9. A compensation method for measuring the junction temperature of a p +-p-n + silicon structure

    O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +3

    ArticleSemiconductor materials and interfacesInstruments and Experimental Techniques20133 citations
    ABI

  10. Composition of uncontrolled impurities and their chemical states and depth profiles at the Al-Si interface

    А.А. Абдувайитов, Kh. Kh. Boltaev

    ArticleSemiconductor materials and interfacesTechnical Physics20153 citations
    ABI

  11. Distinctive Features of the Temperature Sensitivity of a Transistor Structure in a Bipolar Mode of Measurement

    A. V. Karimov, D. P. Dzhuraev, Sh. M. Kuliev +1

    ArticleSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics20163 citations
    ABI

  12. Surface Morphology of NiSi2/Si Films Obtained by the Method of Solid-Phase Deposition

    A. K. Tashatov, N. M. Mustafoyeva

    ArticleSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20203 citations
    ABI

  13. Physical foundations of the formation of the silicon-based heterovarizonic structure

    M. K. Bakhadirkhanov, С. Б. Исамов

    ArticleSilicon and Solar Cell TechnologiesЖурнал технической физики20223 citations
    ABI

  14. Study of the Mobility and Electrical Conductivity of Chromium Silicide

    M. Sh. Isaev, Tokhirjon U. Atamirzaev, Mukhammadsodik N. Mamatkulov +2

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20233 citations
    ABI

  15. Defect Formation in MIS Structures Based on Silicon with an Impurity of Ytterbium

    Kh.S. Daliev, Sharifa B. Utamuradova, Jonibek J. Khamdamov +4

    ArticleSemiconductor materials and interfacesEast European Journal of Physics20243 citations
    ABI

  16. The High-temperature analysis of silicon properties with manganese-oxygen binary complexes

    M. O. Tursunov, Khalmurat Iliev, B. K. Ismaylov

    ArticleSemiconductor materials and interfacesPhysical Sciences and Technology20243 citations
    ABI

  17. Modeling influence of temperature and magnetic field on the density of surface states in semiconductor structures

    U. I. Erkaboev, N. Yu. Sharibaev, M.G. Dadamirzaev +1

    ArticleElectromagnetic Effects on MaterialsIndian Journal of Physics20243 citations
    ABI

  18. Modeling of Optoelectronic Properties in pSi/n-CdmZn1−mS Heterojunctions: Effects of Composition and Temperature

    Jo`shqin Abdullayev, I. B. Sapaev, Sardor R. Kadirov +1

    ArticleSemiconductor materials and interfacesJournal of Electronic Materials20253 citations
    ABI

  19. Influence of structural defects in silicon on formation of photosensitive heterostructures Mn4Si7-Si-Mn4Si7 and Mn4Si7-Si-M

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    ArticleSemiconductor materials and interfacesEurasian journal of physics and functional materials20183 citations
    ABI

  20. Wave processes in silicon samples with nickel impurities arising at pulsed hydrostatic pressure

    Р. Х. Хамидов, О. О. Маматкаримов

    ArticleElectromagnetic Effects on MaterialsSemiconductor Science and Technology20213 citations
    ABI

  21. Obtaining and studying the composition, structure and properties of nanophases and nanolayers of CoSi <sub>2</sub>

    Б. Е. Умирзаков, Zh. M. Jumayev, I. R. Bekpulatov +3

    ArticleSemiconductor materials and interfacesMaterials Research Innovations20243 citations
    ABI

  22. The Result of Successive Exposure to Reverse and Forward Bias on the Electrophysical Characteristics of ZnO:Al/i-ZnO/CdS/CuIn1 – xGax(S, Se)2/Mo Structure Solar Cells

    A. Komilov, Б. Э. Эгамбердиев, R. R. Kabulov +2

    ArticleChalcogenide Semiconductor Thin FilmsApplied Solar Energy20223 citations
    ABI

  23. Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

    А. С. Саидов, Sh. N. Usmonov, М. С. Саидов

    ArticleSilicon Nanostructures and PhotoluminescenceSemiconductors20153 citations
    ABI

  24. Gallium content-dependent efficiency limits of CIGS solar cells at AM1.5G solar irradiance

    Asliddin Komilov

    ArticleChalcogenide Semiconductor Thin FilmsJournal of Photonics for Energy20213 citations
    ABI

  25. Formation of Cobalt Impurity Microinclusions in Silicon Single Crystals

    N. A. Turgunov

    ArticleSilicon and Solar Cell TechnologiesInorganic Materials20183 citations
    ABI