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Technical Physics Letters

Работ: 356

Журнал · ISSN 1063-7850

  1. Radiation-stimulated processes in CdTe solar cells

    Zh. Zhanabergenov, Ш. А. Мирсагатов, Smagul Karazhanov

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2003Цитирований: 0
    ABI

  2. The structure and properties of a Cr3C2-Ni coating deposited by a high-velocity plasma jet onto a copper substrate

    A. D. Pogrebnyak, M. V. Il’yashenko, V. Kshnyakin +3

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2003Цитирований: 0
    ABI

  3. Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

    Б. Сапаев

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0
    ABI

  4. Relaxation of optical excitations in crystals of the Y2O3-Al2O3 system with radiation defects

    M. A. Mussaeva, A.A. Gafarov, Э. М. Ибрагимова

    СтатьяLuminescence Properties of Advanced MaterialsTechnical Physics Letters2003Цитирований: 0
    ABI

  5. A magnetooptical study of the odd crystal field component in a terbium-yttrium aluminum garnet

    U. V. Valiev, John B. Gruber, U. R. Rustamov +2

    СтатьяQuantum optics and atomic interactionsTechnical Physics Letters2003Цитирований: 0
    ABI

  6. Radiation-thermal effects in single crystal corundum

    I. Kh. Abdukadyrova

    СтатьяPhase-change materials and chalcogenidesTechnical Physics Letters2003Цитирований: 0
    ABI

  7. The surface conductivity of gamma-irradiated ceramic dielectrics

    M. I. Muminov, V. N. Sandalov

    СтатьяSemiconductor materials and devicesTechnical Physics Letters2003Цитирований: 0
    ABI

  8. Nonlinear optical properties of gold nanoparticles synthesized by ion implantation in sapphire matrix

    А. Л. Степанов, C. Marques, E. Alves +5

    СтатьяNonlinear Optical Materials StudiesTechnical Physics Letters2005Цитирований: 0
    ABI

  9. The effect of γ radiation on the temperature dependence of the surface generation velocity at a Si-SiO2 interface

    П. Б. Парчинский, L. G. Ligai, Kh. Zh. Mansurov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  10. Composition and photoelectric properties of epitaxial silicon layers grown from a tin-based solution melt of technical silicon

    Б. Сапаев, А. С. Саидов, Sh.I. Ibragimov

    СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2005Цитирований: 0
    ABI

  11. Effect of pressure on the properties of a silicon-glass interface

    С. И. Власов, M. A. Ergasheva, T. P. Adylov

    СтатьяSemiconductor Quantum Structures and DevicesTechnical Physics Letters2005Цитирований: 0
    ABI

  12. Temperature profile along a nanowhisker growing in high vacuum

    N. V. Sibirev, І. П. Сошніков, В. Г. Дубровский +1

    СтатьяNanowire Synthesis and ApplicationsTechnical Physics Letters2006Цитирований: 0
    ABI

  13. Optical properties of (Ge2)1−x (InP)x solid solutions

    Sh. K. Ismailov, А. С. Саидов, K. Durshimbetov +1

    СтатьяPhase-change materials and chalcogenidesTechnical Physics Letters2006Цитирований: 0
    ABI

  14. The photoelectret state without external polarizing field in silver-doped silicon films

    G. A. Nabiev

    СтатьяThermography and Photoacoustic TechniquesTechnical Physics Letters2007Цитирований: 0
    ABI

  15. Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

    N. A. Matchanov

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2007Цитирований: 0
    ABI

  16. Structural features of two-component dusty plasma Coulomb balls

    S. G. Psakhie, Konstantin Zolnikov, Л. Ф. Скоренцев +2

    СтатьяDust and Plasma Wave PhenomenaTechnical Physics Letters2008Цитирований: 0
    ABI

  17. Current-voltage characteristics of Si/Si1 − x Ge x heterodiodes fabricated by direct bonding

    I. V. Grekhov, E. I. Belyakova, L. S. Kostina +7

    СтатьяSemiconductor materials and interfacesTechnical Physics Letters2008Цитирований: 0
    ABI

  18. Two-stage doping of silicon with phosphorus-32 and sulfur-32 isotopes

    Sh. Makhkamov, N.A. Tursunov, M. Kаrimov +4

    СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2008Цитирований: 0
    ABI

  19. Effect of ultrasound on the adhesion of metal coating to nonferrous metals

    N. N. Zaveryukhina

    СтатьяMaterial Properties and ApplicationsTechnical Physics Letters2010Цитирований: 0
    ABI

  20. Optical absorption and photoconductivity in gamma-irradiated zinc selenide crystals

    D. B. Él’murotova, Э. М. Ибрагимова

    СтатьяChalcogenide Semiconductor Thin FilmsTechnical Physics Letters2010Цитирований: 0
    ABI

  21. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

    P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

    СтатьяMaterial Science and ThermodynamicsTechnical Physics Letters2011Цитирований: 0
    ABI

  22. Reduced absorption of light by metallic intra-cavity contacts: Tamm plasmon based laser mode engineering

    M. A. Kaliteevski, A. A. Lazarenko

    СтатьяPhotonic Crystals and ApplicationsTechnical Physics Letters2013Цитирований: 0
    ABI

  23. Nonequilibrium structures and decay processes of clusters sputtered by ion bombardment

    С. Е. Максимов, Н. Х. Джемилев, Б. Л. Оксенгендлер +1

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2013Цитирований: 0
    ABI

  24. Sputtering of atoms during ion bombardment of media containing nanosized particles in the near-surface region

    С. Е. Максимов, Б. Л. Оксенгендлер

    СтатьяIon-surface interactions and analysisTechnical Physics Letters2015Цитирований: 0
    ABI

  25. Specific Features of the Microstructure and Properties of Multielement Nitride Coatings Based on TiZrNbAlYCr

    A.D. Pogrebnjak, В. М. Береснев, О. В. Бондар +3

    СтатьяMetal and Thin Film MechanicsTechnical Physics Letters2018Цитирований: 0
    ABI