East European Journal of Physics
Работ: 150
Журнал · ISSN 2312-4334
Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties
S. Sadullaev, I. B. Sapaev, Khidoyat E. Abdikarimov
СтатьяAdvanced Semiconductor Detectors and MaterialsEast European Journal of Physics2025Цитирований: 2ABI