Semiconductor Quantum Structures and Devices

Работ: 469

Anomalous transparency of the metal–dielectric interface during thermal emission of phonons by thin metal films
V. G. Volotskaya, V. A. Shklovskiǐ, L. E. Musienko
СтатьяMechanical and Optical ResonatorsSoviet Journal of Low Temperature Physics1980Цитирований: 0
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Magnetic properties and energy spectrum of Cd1−<i>x</i>Mg<i>x</i> alloys
G. E. Grechnev, I. V. Svechkarev, J. W. McClure
СтатьяAdvanced Chemical Physics StudiesSoviet Journal of Low Temperature Physics1980Цитирований: 0
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Nonlinear orbital magnetization of Bloch electrons in weak fields
G. P. Mikitik, S. S. Nedorezov
СтатьяSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics1980Цитирований: 0
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Theory of the nonlinear orbital magnetism of Bloch electrons
G. P. Mikitik, S. S. Nedorezov
СтатьяSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics1980Цитирований: 0
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Doping of solid solutions in liquid epitaxy. III. Tellurium in AlxGa1?xSb
A. A. Vilisov, V. P. Germogenov, N. K. Маksimova +1
СтатьяSemiconductor materials and interfacesRussian Physics Journal1980Цитирований: 0
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Investigation of photoelectric and recombination characteristics of a CdHgTe optical mixer
Yu. V. Lilenko
СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1980Цитирований: 0
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Investigation of anisotropic effects in vapor epitaxy of indium arsenide. I. Anistropy of growth rate and surface microrelief
Г. А. Александрова, И. В. Ивонин, L. M. Krasil'nikova +3
СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1980Цитирований: 0
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Behavior of copper in gallium arsenide with high tin concentration
I. V. Kаmenskaya, M. A. Krivov, E. V. Malisova +6
СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1980Цитирований: 0
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Ion doping of gallium arsenide
П. В. Павлов, E. I. Zorin, D. I. Tetelbaum
СтатьяPhase-change materials and chalcogenidesRussian Physics Journal1980Цитирований: 0
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Hot electron luminescence
B. P. Zakharchenya
СтатьяStrong Light-Matter InteractionsJournal of Luminescence1981Цитирований: 0
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Bias current in semiconductors during overcharging of impurity centres
B. B. Baizakov, R. A. Moominov, S. H. Shamirzaiev +1
СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)1981Цитирований: 0
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Investigation of the band spectrum of semiconductors by means of a tunnel diode under pressure
Z. M. Alekseeva, A. P. Vyatkin, А. П. Дмитриев
СтатьяAdvancements in Semiconductor Devices and Circuit DesignRussian Physics Journal1981Цитирований: 0
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Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors
В. В. Антонов, А. В. Войцеховский, M. A. Krivov +6
СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1981Цитирований: 0
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Behavior of excess currents in n-type gallium arsenide tunnel diodes
A. P. Vyatkin, V. A. Glushchenko, R. P. Parkhomenko +1
СтатьяAdvanced Semiconductor Detectors and MaterialsRussian Physics Journal1981Цитирований: 0
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Effect of isovalent impurities and pressure on the magnetic properties and the parameters of the energy spectrum of cadmium
G. E. Grechnev, I. V. Svechkarev
СтатьяSemiconductor Quantum Structures and DevicesSoviet Journal of Low Temperature Physics1981Цитирований: 0
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Phonon damping of excitons in cryocrystals of inert elements
I. Ya. Fugol’, E. I. Tarasova
СтатьяStrong Light-Matter InteractionsSoviet Journal of Low Temperature Physics1981Цитирований: 0
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Transient effects in thin aluminum films in the resistive state
V. V. Stupakov, V. Yu. Tarenkov
СтатьяQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics1981Цитирований: 0
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On the diamagnetism of deep impurities in quantized semiconductor films
E. Z. Imamov, В. Д. Кревчик
СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (b)1982Цитирований: 0
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Thermal stability of optical properties of electron-irradiated GaAs
D. L. Budnitskii, M. A. Krivov
СтатьяSemiconductor materials and interfacesRussian Physics Journal1982Цитирований: 0
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Photoluminescence of epitaxial films of ZnSe on GaAs
G. T. Vilisov, V. V. Nuvar'eva, P. E. Ramazanov
СтатьяLaser Design and ApplicationsRussian Physics Journal1982Цитирований: 0
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On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation
M. S. Gilenko, P. M. Karageorgy‐Alkalaev, A. Yu. Leĭderman
СтатьяAdvancements in Semiconductor Devices and Circuit Designphysica status solidi (a)1982Цитирований: 0
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On the possibility of a flare-up of discrete exciton absorption structure in n-CdxHg1−xTe crystals in a magnetic field
V. I. Ivanov-Omskiĭ, S. I. Kokhanovskiǐ, R. P. Seysyan +4
СтатьяSemiconductor Quantum Structures and DevicesSolid State Communications1983Цитирований: 0
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On the Minimum Coefficient of Light Absorption by Free Carriers under the Conditions of Exclusion in “Pure” Semiconductors with Non-Injecting Contacts
D. A. Aronov, V. V. Rubinov
СтатьяSilicon and Solar Cell Technologiesphysica status solidi (a)1983Цитирований: 0
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Effect of pressure and impurities on the electronic spectrum of cadmium
G. E. Grechnev
СтатьяSurface and Thin Film PhenomenaSoviet Journal of Low Temperature Physics1983Цитирований: 0
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Effects of a fluctuating electron–electron interaction in disordered indium films
Б. И. Белевцев, Yu. F. Komnik, А. В. Фомин
СтатьяQuantum and electron transport phenomenaSoviet Journal of Low Temperature Physics1984Цитирований: 0
ABI