Semiconductor materials and interfaces

Работ: 771

The effect of copper and iridium input atoms on the recombination properties of silicon
Jahongir Mirzarayimov
СтатьяThin-Film Transistor TechnologiesE3S Web of Conferences2023Цитирований: 0
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Obtaining new types of compounds between silicon and cadmium sulfide
I.B. Sapaev
СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
ABI
Piezocapacitance spectroscopy of a radiation defect in silicon
Numonjon Sultanov, Zokirjon Mirzajonov, Б. Х. Каримов
СтатьяSilicon and Solar Cell TechnologiesE3S Web of Conferences2023Цитирований: 0
ABI
Properties of “Higher Manganese Silicide-Silicon” Heterostructure
Kobiljon K. ugli Kurbonaliev, Н. Ф. Зикриллаев, A. Zh. Khusanov
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 0
ABI
Pressure as the device for changing electric parameters of Schottky diodes based on Si mono crystal
T. Z. Nasirov, Akmal Turayev, M.A. Muydinova +1
СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0
ABI
Quasi-molecules of Sulphur in Silicon
Shoikrom I. Askarov, Bashirulla B. Sharipov, Abdulaziz Sh. Mavlyanov +3
СтатьяSemiconductor materials and interfaces2023Цитирований: 0
ABI
Structure of Aluminum Films for the Creation of Tunnel Junctions
М. В. Стрелков, A. M. Chekushkin, A. A. Lomov +3
СтатьяSurface and Thin Film PhenomenaJournal of Communications Technology and Electronics2023Цитирований: 0
ABI
Lateral Photoelectric Effect In Iron-Silicon Dioxide-Compensated Silicon Hybrid Structures
Э. У. Арзикулов, Alisher D. Nurimov, F. Salakhitdinov +4
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2023Цитирований: 0
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Investigation of the Features of the Thermovoltaic Effect in GaSb, GaAs and GaP Binary Compounds
А. С. Саидов, Sh. N. Usmonov, O. Z. Turgunov
СтатьяSemiconductor materials and interfacesApplied Solar Energy2023Цитирований: 0
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Enhanced Corrosion-Inhibition performance of amino Gossypol: A comprehensive theoretical study
Khasan Berdimuradov, Elyor Berdimurodov, Brahim El Ibrahimi +7
СтатьяSemiconductor materials and interfacesComputational and Theoretical Chemistry2024Цитирований: 0
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Effect of Low-Energy Implantation of In+ Ions on the Composition and Electronic Structure of Single-Crystal GaP(111)
S. B. Donaev, Ganjimurod Shirinov, Б. Е. Умирзаков +2
СтатьяIon-surface interactions and analysisCoatings2024Цитирований: 0
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Study of infrared quenching in silicide-silicon-silicide structures
A. T. Mamadalimov, Makhmudhodzha Isaev
СтатьяSemiconductor materials and interfacesAdvanced Physical Research2024Цитирований: 0
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Dielectric Properties of Zirconium Carbide (ZrC) in the Terahertz Domain: Challenges with Surface Layers
Muhammad Farooq Saleem, Ghulam Abbas Ashraf, Muhammad Javid +9
СтатьяSemiconductor materials and devicesJOM2024Цитирований: 0
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Dislocation Mechanisms of Misfit Stress Relaxation in Crystalline Nanoheterostructures
M. Yu. Gutkin, A. L. Kolesnikova, S.A. Krasnitckii +6
СтатьяMetal and Thin Film MechanicsThe Physics of Metals and Metallography2024Цитирований: 0
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Influence of heating of charge carriers on the contact resistance of the Schottky barrier
G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1
СтатьяSemiconductor materials and interfacesAIP conference proceedings2024Цитирований: 0
ABI
Photoconductivity and bandgap of binary impurity - doped crystalline silicon
A. Sh. Mavlyanov, M. K. Khakkulov, O. E. Sattarov +2
СтатьяSilicon and Solar Cell TechnologiesJournal of Physics Conference Series2024Цитирований: 0
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Influence of Accumulation of Impurity Atoms Ni and Fe on the Electrophysical Properties of Si Single Crystals
N. A. Turgunov, Sh. K. Akbarov, N. B. Khaytimmetov +1
СтатьяSemiconductor materials and interfacesJournal of Nano- and Electronic Physics2024Цитирований: 0
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Influence of Nickel Impurity on the Operating Parameters of a Silicon Solar Cell
Z. T. Kenzhaev, Н. Ф. Зикриллаев, В. Б. Оджаев +4
СтатьяSilicon and Solar Cell TechnologiesRussian Microelectronics2024Цитирований: 0
ABI
Structural Features of Silicon with Tin Impurity
Sharifa B. Utamuradova, Bakhodir B. Bokiyev, D. S. Pulatova
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
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CVC Structure of PtSi - Si<Pt>-M in a Wide Range of Temperatures
A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev +2
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
ABI
Study of the Thermoelectric Properties of Chrome Silicides
A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Ismoil T. Bozarov +2
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
ABI
Determining discrete energetic states in a ligated silicon structure using a mathematical model
Jahongir Mamadaliev, Muslim Turgunov, Nurmirza Toshmamatov +2
СтатьяSemiconductor materials and interfacesAIP conference proceedings2024Цитирований: 0
ABI
Influence of electron irradiation on the microhardness of cobalt doped silicon
Mannab Yusupovich Tashmetov, Shermaxmat Makhkamov, M.N. Erdonov +4
СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2024Цитирований: 0
ABI
Structural Features of the Epitaxial Layer of the (GaAs)1−y−z(Ge2)y(ZnSe)z Solid Solution Grown from a Bismuth Solution Melt
А. С. Саидов, M. U. Kalanov, D. V. Saparov +4
СтатьяSemiconductor materials and interfacese-Journal of Surface Science and Nanotechnology2024Цитирований: 0
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STUDY OF THE DISTRIBUTION PROFILE OF ION- IMPLANTED IN SILICON AND INFLUENCE THERMAL ANNEALING ON THE STRUCTYRE OF IRON SILICIDES
Б. Э. Эгамбердиев, A. S. Mallaev, Shohruh SAYFULLOEV
СтатьяSilicon and Solar Cell TechnologiesŬzMU habarlari.2024Цитирований: 0
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