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Semiconductor materials and interfaces

Работ: 771

  1. Study of Electrical and Photoelectric Phenomena in Structures Based on Manganese Silicon Contact with Manganese High Silicon Membrane

    Akhmadjon Jurayevich Khusanov

    СтатьяSemiconductor materials and interfaces2021Цитирований: 0
    ABI

  2. Electrophysical Properties of Two Structured Polycrystal Silicon

    L. O. Olimov

    СтатьяSemiconductor materials and interfacesINTERNATIONAL JOURNAL OF MULTIDISCIPLINARY RESEARCH AND ANALYSIS2021Цитирований: 0
    ABI

  3. Efficiency of Injecting Radiation Defects during Irradiation of Silicon n+–p Structures with Fast Electrons

    M. Yu. Tashmetov, Sh. Makhkamov, А. R. Sattiev +2

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2021Цитирований: 0
    ABI

  4. Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

    Б. Э. Эгамбердиев, A. Sh. Mavlyanov, Sh. A. Sayfulloyev

    ГлаваSemiconductor materials and interfacesBook Publisher International (a part of SCIENCEDOMAIN International)2021Цитирований: 0
    ABI

  5. Investigation of the stability and charge states of vacancy in clusters Si29 and Si38

    A. B. Normurodov, A. P. Mukhtarov, F. T. Umarova +3

    СтатьяSilicon Nanostructures and PhotoluminescenceCondensed Matter Physics2022Цитирований: 0
    ABI

  6. The influence of ultrasonic waves on the characteristics of the radiation detector

    Abdumalik Gaibov

    СтатьяSilicon and Solar Cell TechnologiesСовременные инновации системы и технологии - Modern Innovations Systems and Technologies2022Цитирований: 0
    ABI

  7. Study of the Composition of Uncontrolled Impurities and the Profiles of Their Distribution at the Ni–CdS Interface

    A. A. Abduvayitov, Kh. Kh. Boltaev, G. A. Rozikov

    СтатьяChalcogenide Semiconductor Thin FilmsJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2022Цитирований: 0
    ABI

  8. Electric voltage redistribution effect in Schottky barrier structures based on Si<P,Ni> under hydrostatic pressure

    Р. Х. Хамидов, О. О. Маматкаримов

    СтатьяSemiconductor materials and interfacesJournal of Physics Conference Series2022Цитирований: 0
    ABI

  9. Features of the Electrical Properties of Heterojunctions n-GaAs-p-(GaAs)1 - x - у(Ge2)x(ZnSe)y

    SIRAJIDDIN ZAYNABIDINOV, Akramjon Y. Boboev, DILHAYOTJON ABDURAHIMOV

    СтатьяSemiconductor materials and interfacesComputational nanotechnology2022Цитирований: 0
    ABI

  10. Peculiarities of the Current Characteristics of a Solar Cell Based on Polycrystalline Silicon at Different Powers of Illumination by Sunlight

    R. R. Kabulov, S. Yu. Gerasimenko, M. U. Khajiev

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2022Цитирований: 0
    ABI

  11. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon

    Н. Ф. Зикриллаев, S. Koveshnikov, Kh.S. Turekeev Kh. S. +2

    СтатьяSemiconductor materials and interfacesФизика твердого тела2022Цитирований: 0
    ABI

  12. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

    N. A. Matchanov, K. A. Bobojonov

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2022Цитирований: 0
    ABI

  13. Composition and electronic structure of hidden nanoscale phases and layers of BaSi-=SUB=-2-=/SUB=- formed in the near-surface of Si

    Б. Е. Умирзаков, M.T. Normuradov, D. A. Normurodov +1

    СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2022Цитирований: 0
    ABI

  14. Computational study of the physical characteristics of Si-based oxide perovskites for energy generation using DFT

    Amjad Ali Pasha, Hukam Khan, Mohammad Sohail +7

    СтатьяPerovskite Materials and ApplicationsMaterials Advances2023Цитирований: 0
    ABI

  15. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

    Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

    СтатьяElectronic and Structural Properties of OxidesDiamond and Related Materials2023Цитирований: 0
    ABI

  16. Extremely high frequency Schottky diodes based on single GaN nanowires

    K Yu Shugurov, А М Можаров, Vladimir V. Fedorov +3

    СтатьяGaN-based semiconductor devices and materialsNanotechnology2023Цитирований: 0
    ABI

  17. Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

    R.O. Ocaya, Abdullah G. Al‐Sehemi, A. Tataroğlu +5

    СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2023Цитирований: 0
    ABI

  18. Model of DC Tunneling Conductivity via Hydrogen‐Like Impurities in Heavily Doped Compensated Semiconductors

    N. A. Poklonski, I. I. Anikeev, С. А. Вырко +1

    СтатьяSemiconductor Quantum Structures and Devicesphysica status solidi (b)2023Цитирований: 0
    ABI

  19. Contacts for SiC nano-microwatt energy converters

    Albina Gurskaya, M. V. Dolgopolov, Sali A. Rajapov +1

    СтатьяAdvanced Energy Technologies and Civil Engineering InnovationsVestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya2023Цитирований: 0
    ABI

  20. High photoconductivity of silicon with nanoclusters of manganese atoms to create efficient solar cells

    Mavlonov Giyosiddin, Usmonov Anvar, Zikrilloyev Islomshokh +1

    СтатьяSilicon and Solar Cell TechnologiesAIP conference proceedings2023Цитирований: 0
    ABI

  21. Peculiarities of Photoelectron Spectra of Ge Implanted with Na-=SUP=-+-=/SUP=- Ions

    S. T. Abraeva, Д. А. Ташмухамедова, M. B. Yusupjanova +1

    СтатьяIon-surface interactions and analysisПисьма в журнал технической физики2023Цитирований: 0
    ABI

  22. On the Band-Gap Width of NiSi2 Nanocrystals Created in the Surface Region of Si Using Ion Implantation

    N. M. Mustafoeva, A. K. Tashatov, Б. Е. Умирзаков

    СтатьяSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  23. Effect stability of lifetime of charged carrier in semiconductorsat a magnetic field

    Т. Т. Muratov

    СтатьяAdvanced Research in Systems and Signal ProcessingVestnik Moskovskogo Universiteta Seriya 3 Fizika Astronomiya2023Цитирований: 0
    ABI

  24. Manufacturing technology of photovoltaic devices based on layered compositions and their properties

    A. V. Umarov, D. K. Djumabayev, Bahodir Abdusamatovich Mirsalikhov +1

    СтатьяChalcogenide Semiconductor Thin FilmsE3S Web of Conferences2023Цитирований: 0
    ABI

  25. Thermal sensor based on si single crystal implanted with different parties P<sup>+</sup> and B<sup>+</sup> ions

    I. R. Bekpulatov, Sh. K. Saliyeva, Z. R. Saidakhmedova +1

    СтатьяSemiconductor materials and interfacesE3S Web of Conferences2023Цитирований: 0
    ABI