Semiconductor materials and interfaces

Работ: 771

Features of the Formation of Ohmic Contacts to n+-InN
Pavlo Sai, N. V. Safryuk-Romanenko, Dmytro B. But +6
СтатьяGaN-based semiconductor devices and materialsUkrainian Journal of Physics2019Цитирований: 0
ABI
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures
Т. Т. Muratov
СтатьяSilicon and Solar Cell TechnologiesSemiconductors2019Цитирований: 0
ABI
Influence of oxygen ion implantation on composition and structure of free nanofilm Si/Cu system
З. А. Исаханов, М. К. Рузибаева, Sh.I. Khamrokulov +3
СтатьяAdvanced Surface Polishing Techniques2019Цитирований: 0
ABI
Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs
O. A. Abdulkhaev, Anvar A’zamovich Yakubov, F. A. Giyasova +3
СтатьяSemiconductor materials and interfaces2020 International Conference on Information Science and Communications Technologies (ICISCT)2020Цитирований: 0
ABI
Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides
А.С. Рысбаев, S.U. Irgashev, A.S. Kasimov +3
СтатьяSemiconductor materials and interfacesEurasian journal of physics and functional materials2020Цитирований: 0
ABI
Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities
Shoikrom I. Askarov, Bashirulla B. Sharipov, Shokhista Saliyeva +3
СтатьяSilicon Nanostructures and PhotoluminescenceAmerican Journal of Aerospace Engineering2020Цитирований: 0
ABI
Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si&lt;Mn&gt;-Au
О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov
СтатьяSemiconductor materials and interfacesФизика и техника полупроводников2020Цитирований: 0
ABI
NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)
Gulkhayo Oybekovna Akbarova
СтатьяAdvancements in Semiconductor Devices and Circuit DesignEPRA International Journal of Research & Development (IJRD)2020Цитирований: 0
ABI
Effect of Radiation 60Со on the Photosensitivity of Overcompensated Silicon
Mahmudov Sherzod Axmadovich, Mirzaraimov Johongir Zokirjonovich, Rafikov Avaz Karimjonovich
СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Progressive Sciences and Technologies (Medical University Varna)2020Цитирований: 0
ABI
Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase
A. Sh. Razzakov, A. Matnazarov, Mutabar Latipova +1
СтатьяSilicon Nanostructures and PhotoluminescenceBulletin of Science and Practice2020Цитирований: 0
ABI
Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity
A. Yu. Leyderman, A.K. Uteniyazov, M.T. Nsanbaev
СтатьяSilicon and Solar Cell TechnologiesSemiconductor Physics Quantum Electronics & Optoelectronics2020Цитирований: 0
ABI
Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)
Sultanov N.A., R. T., Zokirjon Mirzajonov +1
СтатьяSemiconductor materials and interfacesThe American Journal of Applied Sciences2020Цитирований: 0
ABI
Carrier Energy Shift Influence on Quantum Oscillation Phenomena
G. Gulamov, K. B. Umarov, D. Zokirova
СтатьяSemiconductor materials and interfacesInternational Journal of Progressive Sciences and Technologies (Medical University Varna)2020Цитирований: 0
ABI
Study of the influence of the phase composition and crystal structure of FexNi100−x nanostructures on the efficiency of using lithium-ion batteries as anode materials
Daryn B. Borgekov, N.A. Hlebnikov, Dmitriy I. Shlimas +1
СтатьяElectric Power Systems and ControlEurasian journal of physics and functional materials2020Цитирований: 0
ABI
Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm
M. K. Bakhadirkhanov, С. Б. Исамов, Sh. N. Ibodullaev +2
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2020Цитирований: 0
ABI
Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation
О. О. Маматкаримов, О. Химматкулов, I. G. Tursunov
СтатьяAdvanced Materials and Semiconductor TechnologiesPhysics of the Solid State2021Цитирований: 0
ABI
The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al2O3‐p‐CdTe‐Mo Structure
A.K. Uteniyazov, A. Yu. Leyderman, M. V. Gafurova +2
СтатьяIntermetallics and Advanced Alloy PropertiesAdvances in Materials Science and Engineering2021Цитирований: 0
ABI
The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions
Б. Е. Умирзаков, З. А. Исаханов, G. Kh. Allaerova +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2021Цитирований: 0
ABI
Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase
A. Sh. Razzakov, A. Latipova, Alibek Qodirov
СтатьяSemiconductor Quantum Structures and DevicesBulletin of Science and Practice2021Цитирований: 0
ABI
Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction
Komiljon Yakubov, Mutabar Latipova, Alibek Qodirov
СтатьяSemiconductor materials and interfacesBulletin of Science and Practice2021Цитирований: 0
ABI
Iron administration in gallium arsenide
Ergash Yuldashevich Turaev, Akmal Sattorov
СтатьяSemiconductor materials and interfacesACADEMICIA An International Multidisciplinary Research Journal2021Цитирований: 0
ABI
Experimental and theoretical study of the effect of bombardment with Ar+ ions on the spectrum of valence electrons of a Si (111) single crystal
Y. S. Ergashov, Б. Е. Умирзаков, N. A. Nurmatov +1
СтатьяSilicon Nanostructures and PhotoluminescenceE3S Web of Conferences2021Цитирований: 0
ABI
DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT
Б. Э. Эгамбердиев, Sh. A. Sayfulloev, A. S. Mallaev
СтатьяSemiconductor materials and interfacesJournalNX - A Multidisciplinary Peer Reviewed Journal2021Цитирований: 0
ABI
Auger Recombination in Semiconductors
М. Н. Аликулов
СтатьяSurface and Thin Film Phenomena2021Цитирований: 0
ABI
INFLUENCE OF TEMPERATURE ON FILL FACTOR OF I-V CHARACTERISTICS OF ILLUMINATED SOLAR CELLS
I. T. Rajapov, Behzod Kuchkarov, M. O. Turaeva
СтатьяSilicon and Solar Cell TechnologiesWeb of Scientist: International Scientific Research Journal2021Цитирований: 0
ABI

Semiconductor materials and interfaces

Features of the Formation of Ohmic Contacts to n+-InN

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

Influence of oxygen ion implantation on composition and structure of free nanofilm Si/Cu system

Electrical Properties and Photosensitivity of Multi-Barrier Photodiode Structure Based on Semi-Insulating GaAs

Optimal technological modes of ion implantation and following annealing for forming thin nanosized films of silicides

Kinetics of Generation of Thermal Donors in Silicon of Stabilization of States of Fast-Diffusing Impurities

Влияние одноосной упругой деформации на вольт-амперную характеристику поверхностно-барьерных диодов Sb-p-Si&lt;Mn&gt;-Au

NOISES OF ELECTRONIC DEVICES (GENERAL INFORMATION, SOURCES)

Effect of Radiation 60Со on the Photosensitivity of Overcompensated Silicon

Physico-Chemical Bases Cultivation Variable-gap Semiconductor Solid Solution Si1−xGex from the Liquid Phase

Recombination statistics of non-equilibrium carriers in the model of semiconductor with donor-acceptor pairs possessing variable recombination activity

Study Of The Influence Of Radiation Gamma And Thermal Annealing On The Dlts Spectra Of Diodes From Si (Cr)

Carrier Energy Shift Influence on Quantum Oscillation Phenomena

Study of the influence of the phase composition and crystal structure of FexNi100−x nanostructures on the efficiency of using lithium-ion batteries as anode materials

Electric Field-Stimulated Photoconductivity in Silicon with Manganese Atom Nanoclusters in the Range of 3–8 μm

Tensostimulated Effect in a Doped and Heat-Treated Silicon at an Oriented Deformation

The Effect of Ultrasonic Treatments on Current Transport Processes in Al‐Al<sub>2</sub>O<sub>3</sub>‐<i>p</i>‐CdTe‐Mo Structure

The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

Getting Variable-gap Solid Solution Si1−xGex From a Liquid Phase

Features of Obtaining Films MnXSiY on Silicon by Solid-phase Reaction

Iron administration in gallium arsenide

Experimental and theoretical study of the effect of bombardment with Ar<sup>+</sup> ions on the spectrum of valence electrons of a Si (111) single crystal

DISTRIBUTION PROFILES ON THE CRYSTAL STRUCTURE OF THE SURFACE AND AT THE SURFACE OF SILICON DOPED WITH IONS FROM THERMAL ANNEALING OF IRON AND COBALT

Auger Recombination in Semiconductors

INFLUENCE OF TEMPERATURE ON FILL FACTOR OF I-V CHARACTERISTICS OF ILLUMINATED SOLAR CELLS