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Работы, цитирующие эту работу

Работ: 18

Работа: The physics of semiconductor devices

  1. The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures

    T. S. Kamilov, А.С. Рысбаев, V. V. Klechkovskaya +3

    СтатьяSemiconductor materials and interfacesApplied Solar Energy2019Цитирований: 21
    ABI

  2. Mechanism of current transport in Schottky barrier diodes based on coarse-grained CdTe films

    Ш. А. Мирсагатов, A.K. Uteniyazov, А.С. Ачилов

    СтатьяAdvanced Semiconductor Detectors and MaterialsPhysics of the Solid State2012Цитирований: 16
    ABI

  3. Injection photodiode based on p-CdTe film

    Ш. А. Мирсагатов, A.K. Uteniyazov

    СтатьяAdvanced Semiconductor Detectors and MaterialsTechnical Physics Letters2012Цитирований: 11
    ABI

  4. Mechanism of charge transfer in injection photodetectors based on the M(In)-n-CdS-p-Si-M(In) structure

    Ш. А. Мирсагатов, I. B. Sapaev

    СтатьяSemiconductor materials and interfacesPhysics of the Solid State2015Цитирований: 8
    ABI

  5. Mechanism of charge transfer in injection photodiodes based on the In-n +-CdS-n-CdS x Te1 − x -p-Zn x Cd1 − x Te-Mo structure

    Ш. А. Мирсагатов, A. Yu. Leĭderman, O. K. Ataboev

    СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2013Цитирований: 6
    ABI

  6. Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon

    O. K. Ataboev, R. R. Kabulov, N. A. Matchanov +1

    СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2019Цитирований: 4
    ABI

  7. Injection photodiode based on a p-Si-n-CdS-n +-CdS structure

    Ш. А. Мирсагатов, I. B. Sapayev

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2014Цитирований: 4
    ABI

  8. Magnetic field sensor based on compensated silicon

    М. К. Бахадырханов, Х. М. Илиев, K. S. Ayupov +1

    СтатьяMagnetic Field Sensors TechniquesTechnical Physics Letters2003Цитирований: 2
    ABI

  9. Effect of Diatomic Silicon Molecular Impurities on the Luminescent Properties of Semiconductor Solid Solutions

    А. С. Саидов, Sh. N. Usmonov, D. V. Saparov +1

    СтатьяSilicon Nanostructures and PhotoluminescenceApplied Solar Energy2020Цитирований: 2
    ABI

  10. Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics

    D. M. Edgorova

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2007Цитирований: 1
    ABI

  11. Acoustostimulated changes in the density of surface states and their energy spectrum in p-type silicon single crystals

    N. N. Zaveryukhina, E. B. Zaveryukhina, С. И. Власов +1

    СтатьяIndustrial Engineering and TechnologiesTechnical Physics Letters2008Цитирований: 1
    ABI

  12. Injection enhancement of photocurrent in polycrystalline silicon p+-n-n+ structures

    Р. Алиев

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors1997Цитирований: 1
    ABI

  13. The effect of γ radiation on the electrical properties of passive coatings based on lead borosilicate glasses

    П. Б. Парчинский

    СтатьяGlass properties and applicationsTechnical Physics Letters2002Цитирований: 0
    ABI

  14. Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

    П. Б. Парчинский, С. И. Власов, Л. Г. Лигай

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2006Цитирований: 0
    ABI

  15. Temperature effect on the current-voltage characteristics of single-crystalline Si photovoltaic arrays

    Р. А. Муминов, М. Н. Турсунов, О. Ф. Тукфатуллин

    СтатьяSilicon and Solar Cell TechnologiesApplied Solar Energy2007Цитирований: 0
    ABI

  16. Effect of the Ge content on the Schottky barrier height in structures based on Si1 − x Ge x solid solution

    N. A. Matchanov

    СтатьяSemiconductor materials and interfacesTechnical Physics2008Цитирований: 0
    ABI

  17. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region

    A. V. Karimov, D. M. Edgorova, F. A. Giyasova +1

    СтатьяSemiconductor materials and interfacesJournal of Engineering Physics and Thermophysics2008Цитирований: 0
    ABI

  18. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

    Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

    СтатьяElectronic and Structural Properties of OxidesDiamond and Related Materials2023Цитирований: 0
    ABI