Semiconductor materials and devices

Работ: 277

Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K
Э. У. Арзикулов, M. Radzhabova, Xuemin Cui +6
СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
ABI
Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface
Д. А. Ташмухамедова, Б. Е. Умирзаков, Z. A. Tursunmetova
СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
ABI
Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation
Utkirjon Sharopov
ГлаваIon-surface interactions and analysisSpringerBriefs in materials2024Цитирований: 0
ABI
Electrophysical Properties of Nanofilms Produced by Magnetron Sputtering Method
Dovranov Kuvondik Turakulovich
ГлаваSemiconductor materials and devicesIntechOpen eBooks2024Цитирований: 0
ABI
Techno-Economic Analysis on Proton Conductor Ceramic Based Technologies for Various Materials, Configurations, Applications and Products
Andrea Moranti, Julian Dailly, Massimo Santarelli +1
ПрепринтZnO doping and propertiesSSRN Electronic Journal2024Цитирований: 0
ABI
Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices
Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam +7
СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2025Цитирований: 0
ABI
ITO Films Deposited on Silicon by CVD Method
R. R. Kabulov, А. Кутлимратов, А. С. Саидов +2
СтатьяZnO doping and propertiesSurface Engineering and Applied Electrochemistry2025Цитирований: 0
ABI
Effect of Substrate Temperature on the Morphology and Crystallinity of TiO₂ Thin Films Grown by ALD Using TTIP and H₂O
T. K. Turdaliev, Khojiakhmad Kh. Zokhidov, Shukhrat Ch. Iskandarov +1
СтатьяTiO2 Photocatalysis and Solar CellsEast European Journal of Physics2025Цитирований: 0
ABI
Oxide layer growth on silicon substrates: effects of temperature and surface preparation
X. B. Ashurov, M. M. Adilov, A. A. Ismatov +1
СтатьяSemiconductor materials and devices«Узбекский физический журнал»2025Цитирований: 0
ABI
Optical Performance and Crystal Structure of TiO2 Thin Film on Glass Substrate Grown by Atomic Layer Deposition
T. K. Turdaliev
СтатьяTiO2 Photocatalysis and Solar CellsEast European Journal of Physics2025Цитирований: 0
ABI
Investigating aluminum dual-ion battery performance: a study on electrolyte optimization and graphite cathode functionality
I. Ashurov, M. M. Adilov, Х. Б. Ашуров
СтатьяSemiconductor materials and devices«Узбекский физический журнал»2025Цитирований: 0
ABI
Self-Checking Finite State Machines Based on Weight-Based Sum Codes and Properties of Self-Quasidual Boolean Functions
Д.В. Ефанов
СтатьяSemiconductor materials and devicesTransport automation research2025Цитирований: 0
ABI
Investigating the Pressure-Dependent Enhancement of Oxide Layers (Al 2 O 3 ) at Elevated Temperatures: A Theoretical and Experimental Analysis
Shabir Ali, Ali B.M. Ali, Xinhua Wang +4
СтатьяSemiconductor materials and devicesNANO2025Цитирований: 0
ABI
Effect of electron injection on charge properties of lead-boron-silicate glass
О. О. Маматкаримов, N. Yu. Sharibaev, A. A. Abdulkhayev +1
СтатьяSemiconductor materials and interfacesAIP conference proceedings2025Цитирований: 0
ABI
Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization
M. Balasubbareddy, K. Sivasankaran, A. É. Atamuratov +1
СтатьяSemiconductor materials and devicesJournal of Computational Electronics2025Цитирований: 0
ABI
Internal Energy and Heat Capacity of a Two-Dimensional Electron Gas in a Half-Filled Landau Subband
B. T. Abdulazizov, P. J. Baymatov, O. M. Yunusov +2
СтатьяQuantum and electron transport phenomenaInternational Journal of Theoretical Physics2025Цитирований: 0
ABI
Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet
A. É. Atamuratov, И. Н. Каримов, Mirzabahrom Foziljonov +3
СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
ABI
Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment
Uchkun Kutliev, Atabek S. Ashirov, Gulmira X. Allayarova +1
СтатьяIon-surface interactions and analysisEast European Journal of Physics2025Цитирований: 0
ABI
Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET
M. M. Khalilloev, B. O. Jabbarova, F. Eshchanov +1
СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
ABI
Analysis of Temperature-Dependent Surface Properties in the Ni/SiO2/Si System During Electron Beam Deposition
А.А. Рахимов, I. Kh. Khudaykulov, A. A. Ismatov +1
СтатьяSemiconductor materials and devicesEast European Journal of Physics2025Цитирований: 0
ABI
Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon
B. K. Ismaylov, N. F. Zikrillayev, Kanatbay A. Ismailov +2
СтатьяSilicon and Solar Cell TechnologiesEast European Journal of Physics2025Цитирований: 0
ABI
Influence of Cooling Rate on Structural and Electrophysical Changes in Zirconium-Doped Silicon (Si + Zr)
Sharifa B. Utamuradova, Shakhrukh Kh. Daliev, Шерзодбек Исмоилов
СтатьяSilicon and Solar Cell TechnologiesInternational Journal of Independent Research Studies2025Цитирований: 0
ABI
Impact of incomplete ionization on the critical electric field of p - n junction structures based on Si and GaAs
J. Sh. Abdullayev, Dildora Qalandarova, M. Sh. Ibragimova
СтатьяSilicon and Solar Cell TechnologiesLow Temperature Physics2026Цитирований: 0
ABI
Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon
M.Yu. Tashmetov, Sh. Makhkamov, Sohibjon Egamov +2
СтатьяSilicon and Solar Cell TechnologiesPhysica B Condensed Matter2026Цитирований: 0
ABI
Silica glasses for AI computing chips: Achieving low dielectric constant and high mechanical strength via rapid light shaping and low temperature sintering
Shibo Zhao, 徐娅娇, Hongyun Zeng +6
СтатьяSemiconductor materials and devicesCeramics International2026Цитирований: 0
ABI

Semiconductor materials and devices

Current Mechanisms in Zinc Diffusion-Doped Silicon Samples at T = 300 K

Effect of the Angle of Incidence of Low-Energy Ar+ Ion Beams on the Composition and Structure of the GaAs Surface

Formation of Defects and Clusters on the Surface of LiF Crystals Under Electron and Ion Irradiation

Electrophysical Properties of Nanofilms Produced by Magnetron Sputtering Method

Techno-Economic Analysis on Proton Conductor Ceramic Based Technologies for Various Materials, Configurations, Applications and Products

Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

ITO Films Deposited on Silicon by CVD Method

Effect of Substrate Temperature on the Morphology and Crystallinity of TiO₂ Thin Films Grown by ALD Using TTIP and H₂O

Oxide layer growth on silicon substrates: effects of temperature and surface preparation

Optical Performance and Crystal Structure of TiO2 Thin Film on Glass Substrate Grown by Atomic Layer Deposition

Investigating aluminum dual-ion battery performance: a study on electrolyte optimization and graphite cathode functionality

Self-Checking Finite State Machines Based on Weight-Based Sum Codes and Properties of Self-Quasidual Boolean Functions

Investigating the Pressure-Dependent Enhancement of Oxide Layers (Al <sub>2</sub> O <sub>3</sub> ) at Elevated Temperatures: A Theoretical and Experimental Analysis

Effect of electron injection on charge properties of lead-boron-silicate glass

Self-heating-induced junctionless stacked nanosheet FET RF stability performance degradation analysis and optimization

Internal Energy and Heat Capacity of a Two-Dimensional Electron Gas in a Half-Filled Landau Subband

Impacts of Local Oxide Trapped Charge on Electrical and Capacitance Characteristics of SOI FinFet

Studies of Implantation of O+ Ions into SiO2(001) Films at the Small-Angle Ion Bombardment

Effect of Gate Oxide and Back Oxide Materials on Self-Heating Effect in FinFET

Analysis of Temperature-Dependent Surface Properties in the Ni/SiO2/Si System During Electron Beam Deposition

Investigation of the Influence of Nickel on the Behavior of Thermal Donors in Silicon

Influence of Cooling Rate on Structural and Electrophysical Changes in Zirconium-Doped Silicon (Si + Zr)

Impact of incomplete ionization on the critical electric field of <i>p</i> - <i>n</i> junction structures based on Si and GaAs

Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

Silica glasses for AI computing chips: Achieving low dielectric constant and high mechanical strength via rapid light shaping and low temperature sintering