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Semiconductor materials and devices

Работ: 277

  1. Composition and Morphology of A Si(111) Surface with a SiO2 Surface Film of Different Thicknesses

    Б. Е. Умирзаков, S. B. Donaev, R. M. Yorkulov +2

    СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2022Цитирований: 0
    ABI

  2. Capacitance Method for Identifying Degradation due to Electrical Stress in MOSFETs

    Zamira Atamuratova, Ahmed Yusupov, Jean Chamberlain Chedjou +1

    СтатьяSemiconductor materials and devicese-Journal of Surface Science and Nanotechnology2022Цитирований: 0
    ABI

  3. INVESTIGATION OF SILICON SOLAR CELLS USING THE EDIBON SCADA SYSTEM

    M. Nosirov, Jahongir Norboyevich Ziyoitdinov, Abduhalil Eraliev +2

    СтатьяSemiconductor materials and devicesЭкономика и социум2022Цитирований: 0
    ABI

  4. Capacitance-Voltage Method for Detecting the local oxide trapped charge in SOI FinFET

    A.E. Abdikarimov, Mirzabahrom Foziljonov, И. Н. Каримов

    СтатьяSemiconductor materials and devices2022Цитирований: 0
    ABI

  5. Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

    R.O. Ocaya, Abdullah G. Al‐Sehemi, A. Tataroğlu +5

    СтатьяSemiconductor materials and interfacesPhysica B Condensed Matter2023Цитирований: 0
    ABI

  6. EFFECT OF QUENCHING AND TEMPERING TEMPERATURES ON THE STRUCTURE FORMATION OF 4XMFC, 4X5MF1C STEELS DURING LOW-TEMPERATURE NITRO-CEMENTATION

    Begatov Mukhammadjonovich, Ergashev Meirzhan Sattar Ugli, Malika Platoshina +58

    СтатьяMetal and Thin Film MechanicsInternational Journal of Mechatronics and Applied Mechanics2023Цитирований: 0
    ABI

  7. Prediction of Defect Formation Process in Lithium Fluoride Using Nonlinear Regression Analysis

    Alisher Kakhramonov, Mukhtorjon Karimov, М. К. Курбанов +3

    СтатьяAdvancements in Battery Materials2023Цитирований: 0
    ABI

  8. Epitaxial Growth of Ge Nanofilms on the Surface of SrF2

    S. T. Abraeva, Д. А. Ташмухамедова, Б. Е. Умирзаков

    СтатьяSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2023Цитирований: 0
    ABI

  9. Gate Oxide And Back Oxide Materials Combined Influence On Self-Heating And Dibl Effects In 2d Mos<sub>2</sub> Based Mosfet

    Atabek E. Egamberdievich Atamuratov, Khushnudbek Sharifbaevich Saparov, Ahmed Yusupovich Yusupov +1

    ПрепринтAdvancements in Semiconductor Devices and Circuit DesignPreprints.org2023Цитирований: 0
    ABI

  10. Growing of perfect single-crystal epitaxial films of (Si 2 ) 1-x (GaN) x solid solutions on Si (111) substrates from the liquid phase

    D. V. Saparov, А. С. Саидов, Sh. N. Usmonov +3

    ПрепринтGaN-based semiconductor devices and materialsResearch Square2023Цитирований: 0
    ABI

  11. Exploring the Advancements in Physical Vapor Deposition Coating: A Review

    Hamza Ichou, Nаdiа Аrrousse, Elyor Berdimurodov +1

    Обзорная статьяMetal and Thin Film MechanicsJournal of Bio- and Tribo-Corrosion2023Цитирований: 0
    ABI

  12. Rational design of two-dimensional BN biphenylene monolayer as an efficient anode material for Ca-ion batteries: A theoretical study

    Khidhair Jasim Mohammed, Abdulrahman T. Ahmed, Mandeep Kaur +6

    СтатьяAdvancements in Battery MaterialsJournal of Physics and Chemistry of Solids2024Цитирований: 0
    ABI

  13. Impact of source (drain) doping profiles and channel doping level on self-heating effect in FinFET

    A. É. Atamuratov, B. O. Jabbarova, M. M. Khalilloev +5

    СтатьяAdvancements in Semiconductor Devices and Circuit DesignMicro and Nanostructures2024Цитирований: 0
    ABI

  14. A Novel Four-Level T-Type Reconfigurable Fault-Tolerant Converter for Hybrid-Excitation SRM Performance Enhancement

    Guoping Wang, Hao Chen, Fengyuan Yu +8

    СтатьяSemiconductor materials and devicesIEEE Transactions on Transportation Electrification2024Цитирований: 0
    ABI

  15. Numerical calculation of the probability of an electronic transition in a two-barrier heterostructure by a thin nanolayer

    Paziljon Baymatov, Bakhrom Abdulazizov, Makhmudjon Tokhirjonov

    СтатьяSurface and Thin Film PhenomenaThe European Physical Journal B2024Цитирований: 0
    ABI

  16. SiC plasma characterization produced by 3 ns pulse laser at 10 <sup>10</sup> W/cm <sup>2</sup> intensity

    L. Torrisi, A. Torrisi, M. Cutroneo

    СтатьяSilicon Carbide Semiconductor TechnologiesRadiation effects and defects in solids2024Цитирований: 0
    ABI

  17. Dielectric Properties of Zirconium Carbide (ZrC) in the Terahertz Domain: Challenges with Surface Layers

    Muhammad Farooq Saleem, Ghulam Abbas Ashraf, Muhammad Javid +9

    СтатьяSemiconductor materials and devicesJOM2024Цитирований: 0
    ABI

  18. Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films

    A. A. Abduvayitov, Д. А. Ташмухамедова, Б. Е. Умирзаков +1

    СтатьяSemiconductor materials and devicesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  19. CVC Structure of PtSi - Si&lt;Pt&gt;-M in a Wide Range of Temperatures

    A. T. Mamadalimov, Makhmudkhodja Sh. Isaev, Tokhirjon U. Atamirzaev +2

    СтатьяSemiconductor materials and interfacesEast European Journal of Physics2024Цитирований: 0
    ABI

  20. Determining discrete energetic states in a ligated silicon structure using a mathematical model

    Jahongir Mamadaliev, Muslim Turgunov, Nurmirza Toshmamatov +2

    СтатьяSemiconductor materials and interfacesAIP conference proceedings2024Цитирований: 0
    ABI

  21. Effect of $${\text{O}}_{2}^{ + }$$ Ion Implantation on the Elemental and Chemical Composition of the Si(111) Surface

    G. Kh. Allayarova, Б. Е. Умирзаков, A. K. Tashatov

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  22. The Effect of Atmospheric Oxide Thermodesorption on Negative-Ion Atomic and Cluster Sputtering of Silicon Single Crystal by Cesium Ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques2024Цитирований: 0
    ABI

  23. A new method for growing epitaxial films on foreign substrates − Bent epitaxy

    D. V. Saparov

    СтатьяZnO doping and propertiesJournal of Crystal Growth2024Цитирований: 0
    ABI

  24. Some electrical properties of p-Si–n-(Si2)1-y(GaN)y structures obtained by epitaxy of (Si2)1-y(GaN)y solid solutions on silicon substrates from liquid-phase

    А. С. Саидов, Shukrullo Usmonov, D. V. Saparov +4

    СтатьяGaN-based semiconductor devices and materialsAIP conference proceedings2024Цитирований: 0
    ABI

  25. The effect of atmospheric oxide thermodesorption on negative-ion atomic and cluster sputtering of silicon single crystal by cesium ions

    Б.Г. Атабаев, R. Djabbarganov, A. S. Khalmatov +2

    СтатьяIon-surface interactions and analysisПоверхность Рентгеновские синхротронные и нейтронные исследования2024Цитирований: 0
    ABI