Работы, цитирующие эту работу

Работ: 26

Работа: Constitution of Binary Alloys

I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
А. С. Саидов, A. Yu. Leyderman, Sh. N. Usmonov +1
СтатьяMaterial Science and ThermodynamicsSemiconductors2009Цитирований: 13
ABI
Growth of (InSb)1 − x (Sn2) x films on GaAs substrates by liquid-phase epitaxy
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +1
СтатьяSemiconductor Quantum Structures and DevicesSemiconductors2010Цитирований: 9
ABI
Growth of (GaAs)1 − x (ZnSe) x solid solution films and investigation of their structural and some photoelectric properties
А. С. Саидов, М. С. Саидов, Sh. N. Usmonov +4
СтатьяChalcogenide Semiconductor Thin FilmsPhysics of the Solid State2011Цитирований: 8
ABI
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, А. С. Саидов, A. Yu. Leyderman +2
СтатьяSemiconductor materials and interfacesSemiconductors2009Цитирований: 8
ABI
Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells
А. С. Саидов, K. A. Amonov, B. R. Kutlimurotov
СтатьяSemiconductor materials and interfacesApplied Solar Energy2016Цитирований: 6
ABI
Peculiarities of photosensitivity of n(GaAs)–p(GaAs)1–x–y (ZnSe) x (Ge2) y structures with quantum dots
А. С. Саидов, С. З. Зайнабидинов, M. U. Kalanov +2
СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2015Цитирований: 6
ABI
Active solar energy material science thermoelectric properties of nGe-p(InSb)1 − x (Sn2) x heterostructures
А. С. Саидов, Sh. N. Usmonov, U. P. Asatova
СтатьяAdvanced Thermoelectric Materials and DevicesApplied Solar Energy2010Цитирований: 3
ABI
Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties
А. С. Саидов, Sh. N. Usmonov, М. С. Саидов
СтатьяSilicon Nanostructures and PhotoluminescenceSemiconductors2015Цитирований: 3
ABI
The synthesis and photoelectric properties of Si-(Si2)1−x(ZnS)x epitaxial structures
Б. Сапаев, А. С. Саидов
СтатьяSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters2004Цитирований: 3
ABI
Synthesis and characterization of (Si2)1−x−y (Ge2) x (GaAs) y continuous solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Spectral sensitivity of (Si2)1 − x (CdS)x solid solutions
А. С. Саидов, Sh. N. Usmonov, Khomidkhodzha Kholikov +1
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2007Цитирований: 3
ABI
Charge Transport Mechanism in p--Si--n--(Si2)1--x(CdS)x Semiconductor Structures
S.Z. Zaynabidinov, Kh. M. Madaminov
СтатьяIndustrial Engineering and TechnologiesHerald of the Bauman Moscow State Technical University Series Natural Sciences2020Цитирований: 2
ABI
Studies of the crystal structure of solid solutions (Sn2)1−x−y(GaAs)x(ZnSe)y, (GaAs)1−x(ZnSe)x grown from liquid phase
A. Sh. Razzokov, А. С. Саидов, B. Allabergenov +3
СтатьяChalcogenide Semiconductor Thin FilmsJournal of Crystal Growth2023Цитирований: 2
ABI
Liquid phase epitaxy of (Sn2)1−x(InSb)x solid solution layers
А. С. Саидов, A. Sh. Razzakov, D. V. Saparov
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2002Цитирований: 2
ABI
Spectral Photosensitivity ofpSi—n(ZnSe)1 −x−y (Si2) x (GaP) y Structures
А. С. Саидов, Sh. N. Usmonov, U. Kh. Rakhmonov
СтатьяChalcogenide Semiconductor Thin FilmsApplied Solar Energy2010Цитирований: 2
ABI
Study of certain properties of Si-Si1−xGex (0 ≤ x ≤ 1) structures grown from a restricted tin-based solution-melt by liquid-phase epitaxy
Б. Сапаев, A. S. Saidov
СтатьяSemiconductor materials and interfacesSemiconductors2005Цитирований: 1
ABI
Multicomponent Solid Solutions (ZnSe)1-x-y(Si2)x(GaP)y
А. С. Саидов, Usmonov Sn. N., U. Kh. Rakhmonov +2
СтатьяSemiconductor Quantum Structures and DevicesJournal of Materials Science Research2012Цитирований: 1
ABI
The synthesis and properties of epitaxial layers of (Si2)1−x(GaAs)x solid solutions on silicon substrates
Б. Сапаев, А. С. Саидов, B. N. Zaveryukhin
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
ABI
Synthesis and properties of Ge-(Ge2)1−x(GaAs)x (0≤x≤1.0) epitaxial heterostructures grown by LPE from lead-based solution melts
Б. Сапаев
СтатьяSemiconductor materials and interfacesTechnical Physics Letters2004Цитирований: 1
ABI
Conductors crystallization—a condition for synthesizing new dopant compounds
М. С. Саидов
СтатьяSemiconductor Quantum Structures and DevicesApplied Solar Energy2010Цитирований: 1
ABI
(IV2)1−x(III-V)x solid solutions obtained from a bounded tin melt-solution
Б. Сапаев, М. С. Саидов, А. С. Саидов +1
СтатьяMaterial Science and ThermodynamicsSemiconductors2004Цитирований: 1
ABI
Temperature dependence of the liquid-metal embrittlement of tin
V. N. Cherkasova, L. K. Savitskaya, А. П. Савицкий +1
СтатьяMaterial Properties and ApplicationsMaterials Science1975Цитирований: 0
ABI
Ellipsometric Investigation of Ag-Doping Profiles in Amorphous Chalcogenide Thin Films
Vladimír Hönig, V. K. Fedorov, G. Libbmann +1
СтатьяPhase-change materials and chalcogenidesphysica status solidi (a)1986Цитирований: 0
ABI
Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy
V. P. Germogenov, O. M. Ivleva, С. В. Пономарев +2
СтатьяSemiconductor Quantum Structures and DevicesRussian Physics Journal1992Цитирований: 0
ABI
Minority carrier lifetimes in polycrystalline silicon treated with liquid metals
Б. Сапаев
СтатьяSilicon and Solar Cell TechnologiesTechnical Physics Letters2003Цитирований: 0
ABI